Elastomers for control of wafer temperature in the ≈50°C range during high dose ion implantation

Abstract

Wafer/pad temperatures are measured for various elastomer materials for control of wafer temperatures during high-power implantation to less than 40 C. Wafer/pad temperatures during and directly following implant are monitored by in-situ IR sensors and tracked over long operational cycles. Beneficial effects of wafer temperature control is noted for gain characteristics of modern IC devices.