在高剂量离子注入过程中，硅片温度控制在≈50°C范围内的弹性体

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI:10.1109/IIT.2014.6939983

J. Springer, W. Wriggins, Juergen Kusterer, K. Zotter, M. Current

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引用次数: 0

摘要

测量各种弹性体材料的晶圆/衬垫温度，以控制高功率植入期间的晶圆温度低于40℃。晶圆/衬垫温度在植入期间和之后直接由原位红外传感器监测，并在长操作周期内进行跟踪。晶圆温度控制对现代集成电路器件的增益特性产生了有益的影响。

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Elastomers for control of wafer temperature in the ≈50°C range during high dose ion implantation

Wafer/pad temperatures are measured for various elastomer materials for control of wafer temperatures during high-power implantation to less than 40 C. Wafer/pad temperatures during and directly following implant are monitored by in-situ IR sensors and tracked over long operational cycles. Beneficial effects of wafer temperature control is noted for gain characteristics of modern IC devices.

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2014 20th International Conference on Ion Implantation Technology (IIT)

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