2014 20th International Conference on Ion Implantation Technology (IIT)最新文献_第2页

Study on the improved thermal stability of cobalt silicide film by using cryogenic carbon PAI 低温碳PAI提高硅化钴膜热稳定性的研究

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6939971

Jung-Yi Guo, J. Liao, Yu-Min Lin, C. Cheng, J. Hsieh, Ling-Wu Yang, Tahone Yang, Kuang-Chao Chen, Chih-Yuan Lu

{"title":"Study on the improved thermal stability of cobalt silicide film by using cryogenic carbon PAI","authors":"Jung-Yi Guo, J. Liao, Yu-Min Lin, C. Cheng, J. Hsieh, Ling-Wu Yang, Tahone Yang, Kuang-Chao Chen, Chih-Yuan Lu","doi":"10.1109/IIT.2014.6939971","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939971","url":null,"abstract":"Cryogenic ion implantation process has received increasing attention because it provides better amorphization performance and less end-of-range defects. In this study, 20nm-thick CoSi2 film was formed on cryogenic carbon ion-implanted poly-Si substrate and the agglomeration behavior of CoSi2 film after high temperature RTA annealing was investigated by four-point-probe resistivity measurement. Results suggest that the thermal stability of CoSi2 film is greatly improved when cryogenic carbon pre-amorphization implant (PAI) with energy of 15keV and dose more than or equal to 2E15 ions/cm2 was performed on poly-Si substrate before CoSi2 formation. The suppression of agglomeration of CoSi2 film during 950°C RTA annealing is likely due to the homogeneous distribution of fine-grained CoSi2 film formed on fully amorphized poly-Si substrate. In addition, it was found that the microstructure of underlying poly-Si of stacked poly-Si substrate strongly affects the agglomeration behavior of CoSi2 film. The precise control of amorphization depth by adjusting carbon PAI energy can lead to improvement in CoSi2 thermal stability.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"15 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73680190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Effect of mid-electrode potential on multi-charged ion beam extracted from electron cyclotron resonance ion source 中电极电位对电子回旋共振离子源提取的多电荷离子束的影响

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6940034

Y. Imai, D. Kimura, K. Yano, S. Kumakura, T. Nishiokada, F. Sato, Y. Kato, T. Iida, M. Muramatsu, A. Kitagawa

{"title":"Effect of mid-electrode potential on multi-charged ion beam extracted from electron cyclotron resonance ion source","authors":"Y. Imai, D. Kimura, K. Yano, S. Kumakura, T. Nishiokada, F. Sato, Y. Kato, T. Iida, M. Muramatsu, A. Kitagawa","doi":"10.1109/IIT.2014.6940034","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940034","url":null,"abstract":"We are constructing a tandem type electron cyclotron resonance ion source (ECRIS) and a beam line for extracting, analyzing ion beams, and their applications. The ion beam is extracted from the second stage by an accel-decel extraction system with single-holes and the ion beam current on each electrode is measured. The total ion beam current is measured by a faraday cup installed at downstream from the extraction electrodes. The ion beam current of each charge state is measured by the faraday cup beyond the sector magnet. The most of the total ion beam is consisted of mainly Ar+ ~ 4+ and we can measure up to Ar9+. We measure the total ion beam current and the currents of each charge state as a function of the mid-electrode potential. It is found that the ion current of each charge state depends on the same manner to the mid-electrode potential as similar to the total ion beam currents. The results obtained experimentally against the mid-electrode potential show qualitatively good agreement with a simple theoretical consideration including sheath potential effects for formation of ion beams. The beam loss is estimated by comparing the total ion beam currents with the sum of the currents after mass/charge analysis. The effect of mid-electrode potential is very useful for decreasing the beam loss and then optimizing beam transport for enhancing ion beam current extracted from tandem type ECRIS with many ion sources.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"16 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85142876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Molecular Layer Doping: Non-destructive doping of silicon and germanium 分子层掺杂:硅和锗的无损掺杂

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6939995

B. Long, Giuseppe Alessio Verni, John O’Connell, J. Holmes, M. Shayesteh, D. O'Connell, R. Duffy

{"title":"Molecular Layer Doping: Non-destructive doping of silicon and germanium","authors":"B. Long, Giuseppe Alessio Verni, John O’Connell, J. Holmes, M. Shayesteh, D. O'Connell, R. Duffy","doi":"10.1109/IIT.2014.6939995","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939995","url":null,"abstract":"This work describes a non-destructive method to introduce impurity atoms into silicon (Si) and germanium (Ge) using Molecular Layer Doping (MLD). Molecules containing dopant atoms (arsenic) were designed, synthesized and chemically bound in self-limiting monolayers to the semiconductor surface. Subsequent annealing enabled diffusion of the dopant atom into the substrate. Material characterization included assessment of surface analysis (AFM) and impurity and carrier concentrations (ECV). Record carrier concentration levels of arsenic (As) in Si (~5×1020 atoms/cm3) by diffusion doping have been achieved, and to the best of our knowledge this work is the first demonstration of doping Ge by MLD. Furthermore due to the ever increasing surface to bulk ratio of future devices (FinFets, MugFETs, nanowire-FETS) surface packing spacing requirements of MLD dopant molecules is becoming more relaxed. It is estimated that a molecular spacing of 2 nm and 3 nm is required to achieve doping concentration of 1020 atoms/cm3 in a 5 nm wide fin and 5 nm diameter nanowire respectively. From a molecular perspective this is readily achievable.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"124 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80433809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 19

Introduction of the S-UHE, a single-wafer ultra-high energy ion implanter 单晶片超高能量离子注入器S-UHE的介绍

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6940021

Kazuhiro Watanabe, H. Sasaki, M. Kabasawa, M. Tsukihara, K. Ueno

{"title":"Introduction of the S-UHE, a single-wafer ultra-high energy ion implanter","authors":"Kazuhiro Watanabe, H. Sasaki, M. Kabasawa, M. Tsukihara, K. Ueno","doi":"10.1109/IIT.2014.6940021","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940021","url":null,"abstract":"In order to address the process requirements of leading-edge image sensors, a new single-wafer ultra-high energy ion implanter, the S-UHE, has been developed. This product incorporates two exceptional subassemblies. One is the eighteen-stage RF linear accelerator from the UHE, a multi-wafer ultra-high energy implanter, offering maximum beam energy of 2MeV per charge. The other is the field proven end station used by the MC3-II/GP, a single-wafer medium current implanter, which can provide throughput of over 450 wafers/hour. The S-UHE has a unique beam line concept where beam energy analyzing magnets bend the accelerated beam 180°. This system minimizes tool footprint, providing additional space for maintenance. Other key elements of the beam line include an electrostatic scanner, parallelizing lens and energy filter. The electrostatic scanner provides higher scan speed than mechanical systems - significantly improving dose uniformity compared to a batch high energy implanter. Additionally, the S-UHE ensures accurate implant angles and ultra-low level of metal contamination, both of which are very important parameters for advanced image sensors.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"10 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89745235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 14

Power and analog devices trends, challenges: Implant and thermal processing applications 电源和模拟器件趋势、挑战:植入和热处理应用

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6940046

T. Kuroi

引用次数: 0

Trapping of implanted hydrogen for ultrathin layer transfer 超薄层转移中注入氢的捕集

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6940054

F. Mazen, F. Gonzatti, F. Madeira, S. Reboh, C. Deguet, F. Lallement, D. Landru, F. Rieutord, A. Royal

引用次数: 0

NMOS source-drain extension ion implantation into heated substrates NMOS源漏扩展离子注入加热衬底

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6939768

L. Pipes, L. McGill, A. Jahagirdar

引用次数: 10

Spreading resistance profiling of ultra shallow junction fabricated with low energy as implantation and combination of spike lamp and laser annealing processes using scanning spreading resistance microscopy 利用扫描扩展电阻显微镜研究低能量注入和激光退火工艺合成的超浅结的扩展电阻分布

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6940015

S. Abo, Hidenori Osae, F. Wakaya, M. Takai, H. Oda

{"title":"Spreading resistance profiling of ultra shallow junction fabricated with low energy as implantation and combination of spike lamp and laser annealing processes using scanning spreading resistance microscopy","authors":"S. Abo, Hidenori Osae, F. Wakaya, M. Takai, H. Oda","doi":"10.1109/IIT.2014.6940015","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940015","url":null,"abstract":"Depth profiles of a spreading resistance of ultra-shallow arsenic implanted into silicon with an energy of 2.0 keV and a dose of 1.0 × 1015 ions/cm2 activated with a combination of conventional spike lamp and laser annealing processes were measured using scanning spreading resistance microscopy (SSRM) with a depth resolution of less than 5 nm. The lowest resistances in the arsenic activated region by laser annealing with laser power densities of 0.33 kW/mm2 and 0.35 kW/mm2 followed by spike lamp annealing (a laser first process) were 44 and 88 % lower than those with spike lamp annealing followed by laser annealing (a spike first process) with the same laser power densities, respectively. The lowest resistance in the arsenic activated region by the laser first process with a laser power density of the 0.35 kW/mm2 was 42 % lower than that with a laser power density of 0.33 kW/mm2. The depth of p+.n junction by the laser first process with a laser power density of 0.35 kW/mm2 was 2 nm shallower than that by the spike first process with the same laser power density. The laser first process is more suitable for the fabrication of the sallow and low-resistance extension regions than the spike first process.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"201 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79948349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Implant dopant activation comparison between silicon and germanium 硅和锗植入剂活化比较

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6939769

J. Borland, P. Konkola

引用次数: 2

Investigation of different post HK annealing impact on HK film property and device performance 不同HK后退火工艺对HK薄膜性能及器件性能的影响

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6939969

Yonggen He, David-Wei Zhang, Hailong Liu, Yong Chen, Yu Guobing, Youfeng He, Lan Jin, Jiaqi Wu, Jie Zhao, W. Song, Y. Shaofeng, Jingang Wu

引用次数: 2