Trapping of implanted hydrogen for ultrathin layer transfer

F. Mazen, F. Gonzatti, F. Madeira, S. Reboh, C. Deguet, F. Lallement, D. Landru, F. Rieutord, A. Royal
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引用次数: 0

Abstract

We have studied the impact of the incorporation of a buried and ultrathin layer (i.e a few nm), engineered to trap the implanted hydrogen in the donor substrate, on the silicon layer transfer by Smart Cut™. Two kinds of buried layers were studied: boron doped silicon and silicon-germanium alloy. We show that thin layers of boron doped silicon are particularly efficient to trap implanted hydrogen from the surrounding matrix. Using this structure, the transferred silicon layer presents typically a roughness of a few angstroms RMS, which represents an order of magnitude lower than the process without trapping layer. Moreover, this approach allows to transfer ultrathin silicon layer, i.e less than 100 nm thick, and is then promising for advanced generation of Silicon-On-Insulator wafers.
超薄层转移中注入氢的捕集
我们研究了埋入超薄层(即几纳米)对Smart Cut™硅层转移的影响,该超薄层设计用于将植入的氢捕获在供体衬底中。研究了两种埋层:掺硼硅和硅锗合金埋层。我们发现薄层硼掺杂硅特别有效地捕获周围基质中植入的氢。使用这种结构,转移的硅层呈现出典型的几埃RMS的粗糙度,这比没有捕获层的过程低一个数量级。此外,这种方法允许转移超薄硅层,即厚度小于100纳米,并且有望用于先进一代的绝缘体上硅晶圆。
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