2014 20th International Conference on Ion Implantation Technology (IIT)最新文献_第3页

Bulk FinFET junction isolation by heavy species and thermal implants 大块FinFET结隔离的重种和热植入物

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6939998

F. Khaja, H. Gossmann, B. Colombeau, T. Thanigaivelan

引用次数: 9

Doping mechanism of helium-based plasma 氦基等离子体的掺杂机理

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6939957

G. Fuse, M. Kuriyama, M. Sugitani, M. Tanaka

引用次数: 0

Gettering of the metal impurities in image sensors: An evaluation of heated carbon implants 图像传感器中金属杂质的去除:加热碳植入物的评价

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6939977

V. Chavva

引用次数: 0

TCAD Modeling for next generation CMOS devices 下一代CMOS器件的TCAD建模

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6939997

F. Benistant, Jacquelyn Phang, T. Hermann, E. Bazizi, A. Zaka, Jiang Liu

{"title":"TCAD Modeling for next generation CMOS devices","authors":"F. Benistant, Jacquelyn Phang, T. Hermann, E. Bazizi, A. Zaka, Jiang Liu","doi":"10.1109/IIT.2014.6939997","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939997","url":null,"abstract":"The complexity of the physics involved in the fabrication of 3D advanced nano-devices, promotes the daily use of advanced simulation tools. TCAD will be needed not only to optimize the transistors and support the device and process integration teams, but also to understand the new materials impact on the transistor performance. To achieve such goal, new simulation paradigms are required, affecting the way TCAD is used. Actually, the 3D TCAD, already used for silicon nodes, faces a limitation of present continuum tools for process and device simulations. The constant reduction of the transistor dimensions and the point defects-dopants interaction with multiple interfaces make Kinetic Monte Carlo a suitable tool for predictive 3D process modeling. On the device side, the 3D confinement of the device and the discrete doping profiles require accurate modeling of the scattering mechanisms in the silicon channel which makes 3D Monte Carlo simulation attractive However, for the simulation of new materials in the channel and source/drain of the Finfet, 3D Monte Carlo simulation becomes mandatory for the transport modeling. In this paper, we will review these different aspects of the TCAD needed for the 3D Tri-gate devices.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"74 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86291515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

H+ implantation profile formation in m:Cz and Fz silicon m:Cz和Fz硅中H+注入分布的形成

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6940055

S. Kirnstoetter, M. Faccinelli, P. Hadley, M. Jelinek, W. Schustereder, J. Laven, H. Schulze

{"title":"H+ implantation profile formation in m:Cz and Fz silicon","authors":"S. Kirnstoetter, M. Faccinelli, P. Hadley, M. Jelinek, W. Schustereder, J. Laven, H. Schulze","doi":"10.1109/IIT.2014.6940055","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940055","url":null,"abstract":"Implanting hydrogen ions (H+) into silicon creates defects that can act as donors. The microscopic structure of these defects is not entirely clear. There is a difference in the resulting doping profiles if the silicon is produced by the float zone (Fz) process or the magnetic Czochralski (m:Cz) process. Silicon produced by the m:Cz process has higher concentrations of oxygen and carbon than silicon produced by the Fz process. The presence of the oxygen and carbon affects the formation of defects and thereby the doping profile. We implanted high resistivity p-type m:Cz and Fz wafers with protons. Due to the n-type doping from the H+ implantation, a pn-junction was generated in the sample. Simulations indicate that the H+ implantation depth is 148 μm. Spreading Resistance Profiling (SRP) measurements of as-implanted and not annealed samples show a donor peak at 148 μm in the Fz samples but the peak is at about 160 μm depth in m:Cz samples. After a low temperature anneal of the m:Cz samples at temperatures between 150 and 250 °C for at least 30 minutes, the expected end of range (EOR) donor peak (at about 148 μm) appears. For higher annealing temperatures, the hydrogen related donor complexes (HTD's) become activated and the EOR peak becomes dominant in the implantation profile. In an SRP study we show the evolution of the doping profile of hydrogen implanted m:Cz and Fz wafers as a function of the annealing temperature. To monitor the depth of the formed pn-junction and the effective local diffusion length in the proton radiation damaged region, Electron Beam Induced Current (EBIC) measurements were performed.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"47 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86303893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Ultraviolet (UV) raman characterization of ultra- shallow ion implanted silicon 超浅离子注入硅的紫外拉曼表征

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6940056

W. Yoo, K. Kang, T. Ueda, T. Ishigaki, H. Nishigaki, N. Hasuike, H. Harima, M. Yoshimoto

引用次数: 3

Silicon Tetrafluoride dopant gas for silicon ion implantation 硅离子注入用四氟化硅掺杂气体

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6939987

S. Yedave, Ying Tang, O. Byl, J. Sweeney

{"title":"Silicon Tetrafluoride dopant gas for silicon ion implantation","authors":"S. Yedave, Ying Tang, O. Byl, J. Sweeney","doi":"10.1109/IIT.2014.6939987","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939987","url":null,"abstract":"Silicon Tetrafluoride (SiF4) is a dopant gas of choice for different silicon ion implantation processes used in semiconductor device engineering. It is a primary source of atomic dopants like Si and F, and a potential source of molecular dopants (e.g. Si2, SiFx, x=1-3). A significant challenge associated with the use of SiF4 is that it can compromise ion source performance, resulting in poor beam stability and source life. This is primarily the result of the formation of a halogen cycle that takes place due to the presence of fluorine from the SiF4 molecule along with tungsten materials that are present in the ion source (e.g. liners, walls). A second challenge associated with SiF4 can be limited beam current. In order to improve implant tool performance when using SiF4, the following investigations have been performed: (1) Characterization of SiF4 / H2 mixtures: The addition of hydrogen co-gas can effectively mitigate the halogen cycle and improve source performance. Using the magnitude of the resulting WFx peaks as an indicator, the degree to which the halogen cycle is mitigated is shown as a function of H2 flow rate. Also, in that single packages may impart various advantages, SiF4 / H2 co-mixture stability data are provided. (2) Characterization of enriched (en) 28SiF4: The additional enrichment can enable higher beam currents of 28Si+. The effect of En-28SiF4 flow rate on beam current is presented, along with the resulting WFx spectra. (3) Initial observations of SiF3+ beams are provided, along with the potential benefits that may be obtained in selecting this molecular ion.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"39 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80513884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

A study on Silicon Carbide (SiC) wafer using ion implantation 离子注入碳化硅(SiC)晶圆的研究

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6940058

Weijiang Zhao, K. Tobikawa, T. Nagayama, S. Sakai

引用次数: 1

SAion - SEN's unique solution for 450mm ion implant SAion - SEN独特的450mm离子植入解决方案

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6940043

N. Suetsugu, M. Tsukihara, M. Kabasawa, F. Sato, T. Yagita

引用次数: 3

Using a remote plasma source for n-type Plasma Doping chamber cleans 采用远程等离子体源对n型等离子体掺杂室进行清洗

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6940023

A. Srivastava, A. Wilson, I. Koo

{"title":"Using a remote plasma source for n-type Plasma Doping chamber cleans","authors":"A. Srivastava, A. Wilson, I. Koo","doi":"10.1109/IIT.2014.6940023","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940023","url":null,"abstract":"The Applied Materials VSE Plasma Doping (PLAD) tool consists of an inductively coupled RF ion source and a backside-cooled platen with a pulsed negative DC bias to which the wafer is electrostatically clamped. During n-type doping operations using AsH3 or PH3 gases, the chamber components are heavily coated with residue. An in-situ NF3 process can clean the chamber, but this is a long process, utilizing significant quantities of NF3. Over-etching of some areas can create aluminum fluoride particles, thereby necessitating opening the chamber for a full wipe-down, which extends the cleaning process even more. A high-efficiency remote plasma source (RPS) was installed on the chamber. Fluid dynamics analysis was conducted to uniquely diffuse the afterglow (consisting mostly of atomic fluorine) into the chamber to minimize species residence time. Chamber pressure was used as a monitor for testing end-of-process, which was found to be highly repeatable. A hydride-specific sensor used to monitor emissions from the chamber routinely read zero after RPS cleans, indicating a complete clean. Particle counts after several clean cycles showed minimal degradation over baseline. The RPS provides several improvements over existing processes: (1) It was significantly faster at cleaning the standard wall-coatings for AsH3 and PH3 deposits, using less NF3 and without over-etching. (2) Chamber pressure provided a unique end-of-process monitor. (3) Metal contamination as measured with S-SIMS and TXRF remained within control. (4) Chamber particle performance was not significantly affected. (5) It also proved successful in cleaning GeH4 and B2H6 deposits.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"31 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74329542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2