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2014 20th International Conference on Ion Implantation Technology (IIT)最新文献

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H+ implantation profile formation in m:Cz and Fz silicon m:Cz和Fz硅中H+注入分布的形成
2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6940055
S. Kirnstoetter, M. Faccinelli, P. Hadley, M. Jelinek, W. Schustereder, J. Laven, H. Schulze
{"title":"H+ implantation profile formation in m:Cz and Fz silicon","authors":"S. Kirnstoetter, M. Faccinelli, P. Hadley, M. Jelinek, W. Schustereder, J. Laven, H. Schulze","doi":"10.1109/IIT.2014.6940055","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940055","url":null,"abstract":"Implanting hydrogen ions (H+) into silicon creates defects that can act as donors. The microscopic structure of these defects is not entirely clear. There is a difference in the resulting doping profiles if the silicon is produced by the float zone (Fz) process or the magnetic Czochralski (m:Cz) process. Silicon produced by the m:Cz process has higher concentrations of oxygen and carbon than silicon produced by the Fz process. The presence of the oxygen and carbon affects the formation of defects and thereby the doping profile. We implanted high resistivity p-type m:Cz and Fz wafers with protons. Due to the n-type doping from the H+ implantation, a pn-junction was generated in the sample. Simulations indicate that the H+ implantation depth is 148 μm. Spreading Resistance Profiling (SRP) measurements of as-implanted and not annealed samples show a donor peak at 148 μm in the Fz samples but the peak is at about 160 μm depth in m:Cz samples. After a low temperature anneal of the m:Cz samples at temperatures between 150 and 250 °C for at least 30 minutes, the expected end of range (EOR) donor peak (at about 148 μm) appears. For higher annealing temperatures, the hydrogen related donor complexes (HTD's) become activated and the EOR peak becomes dominant in the implantation profile. In an SRP study we show the evolution of the doping profile of hydrogen implanted m:Cz and Fz wafers as a function of the annealing temperature. To monitor the depth of the formed pn-junction and the effective local diffusion length in the proton radiation damaged region, Electron Beam Induced Current (EBIC) measurements were performed.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"47 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86303893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A plasma doping process for 3D finFET source/drain extensions 用于3D finFET源极/漏极扩展的等离子体掺杂工艺
2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6939993
Cuiyang Wang, S. Tang, Keping Han, H. Persing, H. Maynard, S. Salimian
{"title":"A plasma doping process for 3D finFET source/drain extensions","authors":"Cuiyang Wang, S. Tang, Keping Han, H. Persing, H. Maynard, S. Salimian","doi":"10.1109/IIT.2014.6939993","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939993","url":null,"abstract":"A conformal doping technique is demonstrated for 3D finFET source/drain extensions using a plasma doping (PLAD) system. The arsenic dopant distribution at the top and the sidewalls of the fin was characterized by Energy Dispersive X-Ray spectroscopy (EDS) mapping, EDS line scan, and through-fin secondary ion mass spectroscopy (SIMS). The residual post-anneal damage was also evaluated by cross-section transmission electron spectroscopy (X-TEM). The effects of energy, dose and other plasma doping parameters on the sidewall dopant distribution are also studied.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"14 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90383699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Activation of low-dose Si+ implant into In0.53Ga0.47As with Al+ and P+ co-implants Al+和P+共植入物激活低剂量Si+植入In0.53Ga0.47As
2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6939772
A. G. Lind, K. Jones, C. Hatem
{"title":"Activation of low-dose Si+ implant into In0.53Ga0.47As with Al+ and P+ co-implants","authors":"A. G. Lind, K. Jones, C. Hatem","doi":"10.1109/IIT.2014.6939772","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939772","url":null,"abstract":"To test if Si<sup>+</sup> activation could be improved through forced site selection, co-implantation of varying doses of Al<sup>+</sup> and P<sup>+</sup> with a fixed Si dose into In<sub>0.53</sub>Ga<sub>0.47</sub>As has been studied. P<sup>+</sup> implants are shown to have limited effectiveness in raising overall n-type activation of Si<sup>+</sup> implants while Al-co-implantation is shown to dramatically lower overall n-type activation with increasing Al dose. Implant damage from the co-implant species is thought to be one possible reason for the limited effectiveness P co-implantation has on raising the maximum electrical activation of Si implants. The results suggest that co-implantation has a dramatic, but complicated, effect on activation.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"34 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72892539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Plasma doping (PLAD) for advanced memory device manufacturing 等离子体掺杂(PLAD)在先进存储器件制造中的应用
2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6940017
S. Qin
{"title":"Plasma doping (PLAD) for advanced memory device manufacturing","authors":"S. Qin","doi":"10.1109/IIT.2014.6940017","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940017","url":null,"abstract":"PLAD (plasma doping) is promising for both evolutionary and revolutionary doping options because of its unique advantages which can overcome or minimize many of the issues of the beam-line (BL) based implants. In this talk, I present developments of PLAD on both planar and non-planar 3D device structures. Comparing with the conventional BL implants, PLAD shows not only a significant production enhancement, but also a significant device performance improvement and 3D structure doping capability, including an 80% contact resistance reduction, more than 25% drive current increase on planar devices, and 23% series resistance reduction, 25% drive current increase on non-planar 3D devices.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"46 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86050991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Using SuperScan™ and SuperScan II™ to improve Vt variations in a p-channel power MOSFET device 使用SuperScan™和SuperScan II™改善p沟道功率MOSFET器件的Vt变化
2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6940048
S. Falk, Youn‐ki Kim, Reiner Kaspareit, B. Colombeau, Yves Ritterhaus, H. Holtmeier, Marcel Lamaack
{"title":"Using SuperScan™ and SuperScan II™ to improve Vt variations in a p-channel power MOSFET device","authors":"S. Falk, Youn‐ki Kim, Reiner Kaspareit, B. Colombeau, Yves Ritterhaus, H. Holtmeier, Marcel Lamaack","doi":"10.1109/IIT.2014.6940048","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940048","url":null,"abstract":"SuperScan™ and SuperScan II™, software add-on programs that can be used with AMAT VIISta medium current implanters, have been used to improve center-to-edge Vt variations in a power device. By using SuperScan™ for implanting an n-type doped body implant, an improvement has been seen in radial, center-to-edge Vt variations by up to 32% (ΔVt = 170mV) compared to implanting without SuperScan™ (ΔVt = 250mV). However, if the Vt non-uniformity pattern is slightly off-center, the correction in Vt variation may be better suited for the use of SuperScan II™, which can implant radial patterns which are off-center. An improvement of up to 64% (ΔVt = 90mV) has been seen in center-to-edge Vt variations for off-center patterns by using SuperScan II™ for implanting the same n-type doped body implant.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"11 12 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82830668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Out-diffusion of cesium and rubidium from amorphized silicon during solid-phase epitaxial regrowth 在固相外延再生过程中，铯和铷从非晶硅向外扩散
2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6939974
R. Maier, V. Haublein, H. Ryssel
{"title":"Out-diffusion of cesium and rubidium from amorphized silicon during solid-phase epitaxial regrowth","authors":"R. Maier, V. Haublein, H. Ryssel","doi":"10.1109/IIT.2014.6939974","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939974","url":null,"abstract":"Rutherford Backscattering Spectroscopy was used to analyze and quantify the out-diffusion of Cs and Rb from silicon during solid-phase epitaxial regrowth under N2 atmosphere. Out-diffused amounts of about 60% Rb and 30% Cs were determined. The transient out-diffusion behavior of the alkali atoms in ultra-high vacuum was monitored during recrystallization by secondary neutral mass spectroscopy. The analysis showed that the alkali atoms diffuse out without forming chemical bonds which are critical for the proposed application. With our results it could be estimated that this filling method has a potential to replace other methods for producing atomic vapor cells.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"38 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84321282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Temperature dependent current-voltage characteristics of microwave annealed Al+ implanted 4H-SiC p+-i-n diodes 微波退火Al+注入4H-SiC p+-i-n二极管的温度依赖电流-电压特性
2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6940050
A. Nath, M. V. Rao, Francesco Moscatelli, Maurizio Puzzanghera, Fulvio Mancarella, R. Nipoti
{"title":"Temperature dependent current-voltage characteristics of microwave annealed Al+ implanted 4H-SiC p+-i-n diodes","authors":"A. Nath, M. V. Rao, Francesco Moscatelli, Maurizio Puzzanghera, Fulvio Mancarella, R. Nipoti","doi":"10.1109/IIT.2014.6940050","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940050","url":null,"abstract":"In this work the temperature dependent current-voltage characteristics of microwave annealed 4H-SiC vertical p+-i-n diodes are studied to identify some of the traps which affect the generation-recombination current of these diodes.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"11 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81992592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Atomic layer deposition of dopants for recoil implantation in finFET sidewalls 微场效应管侧壁反冲注入掺杂剂的原子层沉积
2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6940009
T. Seidel, M. Halls, A. Goldberg, J. Elam, A. Mane, M. Current
{"title":"Atomic layer deposition of dopants for recoil implantation in finFET sidewalls","authors":"T. Seidel, M. Halls, A. Goldberg, J. Elam, A. Mane, M. Current","doi":"10.1109/IIT.2014.6940009","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940009","url":null,"abstract":"The doping of finFET sidewalls is studied using glancing angle, energetic ion beam recoil mixing of dopant-rich layers made by atomic layer deposited (ALD) films on vertical Si(100) surfaces. Density Function Theory (DTF) calculations show that surface conditions for initiating ALD with BF3 and PF3 dopants favor hydroxyl-Si surface termination. Monte Carlo calculations of the recoil-delivered-B highlights the process control advantages of grazing angle incidence energetic ion beams, as long as the deposited dopant layers are well controlled in thickness and composition, as one expects from ALD methods.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"74 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89200797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Channeling effect and energy contamination evaluations of B-based beam-line ULE implants - Tools and recipe set-up dependence b基束线ULE植入物的通道效应和能量污染评估。工具和配方设置依赖
2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6939958
S. Qin, Y. Hu, A. Mcteer
{"title":"Channeling effect and energy contamination evaluations of B-based beam-line ULE implants - Tools and recipe set-up dependence","authors":"S. Qin, Y. Hu, A. Mcteer","doi":"10.1109/IIT.2014.6939958","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939958","url":null,"abstract":"We extensively investigate tool and recipe set-up dependence of the ultra-shallow junctions (USJ) doped by the boron-based ultra-low energy (ULE) beam-line (BL) implants. Recipes set-up includes different tools, energies, implant temperatures, and deceleration ratios. Channeling effect and energy contamination issues are de-coupled by drift and deceleration mode implants. A channeling effect factor (CEF) is defined and quantified. Channeling effect is found to be a major factor causing deeper profiles and long tails (xj). Channeling effect gets worse when the implant energy is reduced due to less self-PAI effect (with less damage). Low temperature (-100 °C) implant does not effectively reduce channeling effect. Deceleration mode implant increases tail (xj) due to energy contamination as a secondary order effect.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"106 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88392724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Development of compact gas cluster ion beam (GCIB) equipment and ultra-surface smoothing 紧凑型气体簇离子束(GCIB)设备及超表面平滑的发展
2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6939978
K. Hanazono, K. Tokiguchi, I. Kataoka
{"title":"Development of compact gas cluster ion beam (GCIB) equipment and ultra-surface smoothing","authors":"K. Hanazono, K. Tokiguchi, I. Kataoka","doi":"10.1109/IIT.2014.6939978","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939978","url":null,"abstract":"GCIB technology has been used for semiconductor, optical and magnetic device fabrications. It has also shown a possibility for nanometer level manufacturing. In recent requirement in materials processing, surface smoothing becomes important in a range of nanometer accuracy. This paper describes development of compact GCIB equipment for surface smoothing of lens molds and cutting tools. For the surface smoothing of WC lens mold and CVD diamond cutting tool, the roughness (Ra) of less than 1 nm has been achieved in a production scale. It has also been shown that the GCIB process could make the smoothing smaller than the grain size in these materials.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"330 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80478180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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