Temperature dependent current-voltage characteristics of microwave annealed Al+ implanted 4H-SiC p+-i-n diodes

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI:10.1109/IIT.2014.6940050

A. Nath, M. V. Rao, Francesco Moscatelli, Maurizio Puzzanghera, Fulvio Mancarella, R. Nipoti

引用次数: 2

Abstract

In this work the temperature dependent current-voltage characteristics of microwave annealed 4H-SiC vertical p+-i-n diodes are studied to identify some of the traps which affect the generation-recombination current of these diodes.

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微波退火Al+注入4H-SiC p+-i-n二极管的温度依赖电流-电压特性

本文研究了微波退火4H-SiC垂直p+-i-n二极管的温度依赖性电流-电压特性，以确定影响这些二极管产生-复合电流的一些陷阱。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2014 20th International Conference on Ion Implantation Technology (IIT)

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