Activation of low-dose Si+ implant into In0.53Ga0.47As with Al+ and P+ co-implants

Abstract

To test if Si⁺ activation could be improved through forced site selection, co-implantation of varying doses of Al⁺ and P⁺ with a fixed Si dose into In_0.53Ga_0.47As has been studied. P⁺ implants are shown to have limited effectiveness in raising overall n-type activation of Si⁺ implants while Al-co-implantation is shown to dramatically lower overall n-type activation with increasing Al dose. Implant damage from the co-implant species is thought to be one possible reason for the limited effectiveness P co-implantation has on raising the maximum electrical activation of Si implants. The results suggest that co-implantation has a dramatic, but complicated, effect on activation.