层转移制SOI晶圆的点束与宽束植入器之比较

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI:10.1109/IIT.2014.6939973

Z. Jost, A. Jones, C. Lottes, I. Peidous, M. Ries, A. Usenko

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引用次数: 0

摘要

比较了采用点束植入和宽束植入制造的绝缘体上硅(SOI)晶圆的质量。结果表明，宽光束植入器具有相似质量的晶圆和潜在的吞吐量优势。

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Comparison of spot and wide beam implanters for making SOI wafers by layer transfer

The quality of silicon-on-insulator (SOI) wafers manufactured with either spot beam implanter or wide beam implanter are compared. The comparison shows similar quality wafers and a potential advantage of wide beam implanters in throughput.

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2014 20th International Conference on Ion Implantation Technology (IIT)

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