J. Cha, S. Jin, Anbae Lee, Hun-Sung Lee, Dongseok Kim, Jihwan Park, Ilsik Jang, Ahyoung Oh, S. Jang, S. Yeom, Sung-ki Park, Cjay Cho, S. Hwang, Jongwon Park, Sungho Jo
{"title":"Formation of Source/Drain extension by Antimony implantation for high performance DRAM peripheral transistors","authors":"J. Cha, S. Jin, Anbae Lee, Hun-Sung Lee, Dongseok Kim, Jihwan Park, Ilsik Jang, Ahyoung Oh, S. Jang, S. Yeom, Sung-ki Park, Cjay Cho, S. Hwang, Jongwon Park, Sungho Jo","doi":"10.1109/IIT.2014.6940047","DOIUrl":null,"url":null,"abstract":"We have investigated properties of Antimony implanted Si such as crystalline defect, dopant distribution, and sheet resistance before and after annealing using TEM, SIMS, and 4-point probe. The sheet resistance of Sb implanted Si shows 35% lower than Arsenic, even though junction depth is 25% shallower. Electrical behaviors of Sorce/Drain extension implanted with Sb show 10% improvement of Ion/Ioff characteristics without degradation of drain-induced barrier lowering compared to the As.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"22 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 20th International Conference on Ion Implantation Technology (IIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIT.2014.6940047","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We have investigated properties of Antimony implanted Si such as crystalline defect, dopant distribution, and sheet resistance before and after annealing using TEM, SIMS, and 4-point probe. The sheet resistance of Sb implanted Si shows 35% lower than Arsenic, even though junction depth is 25% shallower. Electrical behaviors of Sorce/Drain extension implanted with Sb show 10% improvement of Ion/Ioff characteristics without degradation of drain-induced barrier lowering compared to the As.
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