Scalability study of boron-based ULE implants for advanced CMOS technology

Abstract

Conventional beam-line (BL) implant shows a poor scalability of profiles (x_j) versus energy at the ULE implant regime due to serious channeling effect and energy contamination issue. B₂H₆ PLAD shows intrinsic channeling effect immunity with a totally different mechanism. An in-situ, build-in B deposition layer is formed during PLAD process as a screen amorphous layer to minimize channeling effect and reduce the surface damage residues as well. For above reasons, B₂H₆ PLAD shows a good scalability of profiles (x_j) versus energy, and achieves better R_S-x_j characteristics and x_j abruptness, and then better device performance including lower series and contact resistances, better I_ON/I_OFF ratio and less short channel effect (SCE), etc. than BL implant counterparts.