J. Cha, S. Jin, Anbae Lee, Hun-Sung Lee, Dongseok Kim, Jihwan Park, Ilsik Jang, Ahyoung Oh, S. Jang, S. Yeom, Sung-ki Park, Cjay Cho, S. Hwang, Jongwon Park, Sungho Jo
{"title":"高性能DRAM外围晶体管中锑注入形成源极/漏极扩展","authors":"J. Cha, S. Jin, Anbae Lee, Hun-Sung Lee, Dongseok Kim, Jihwan Park, Ilsik Jang, Ahyoung Oh, S. Jang, S. Yeom, Sung-ki Park, Cjay Cho, S. Hwang, Jongwon Park, Sungho Jo","doi":"10.1109/IIT.2014.6940047","DOIUrl":null,"url":null,"abstract":"We have investigated properties of Antimony implanted Si such as crystalline defect, dopant distribution, and sheet resistance before and after annealing using TEM, SIMS, and 4-point probe. The sheet resistance of Sb implanted Si shows 35% lower than Arsenic, even though junction depth is 25% shallower. Electrical behaviors of Sorce/Drain extension implanted with Sb show 10% improvement of Ion/Ioff characteristics without degradation of drain-induced barrier lowering compared to the As.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"22 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Formation of Source/Drain extension by Antimony implantation for high performance DRAM peripheral transistors\",\"authors\":\"J. Cha, S. Jin, Anbae Lee, Hun-Sung Lee, Dongseok Kim, Jihwan Park, Ilsik Jang, Ahyoung Oh, S. Jang, S. Yeom, Sung-ki Park, Cjay Cho, S. Hwang, Jongwon Park, Sungho Jo\",\"doi\":\"10.1109/IIT.2014.6940047\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have investigated properties of Antimony implanted Si such as crystalline defect, dopant distribution, and sheet resistance before and after annealing using TEM, SIMS, and 4-point probe. The sheet resistance of Sb implanted Si shows 35% lower than Arsenic, even though junction depth is 25% shallower. Electrical behaviors of Sorce/Drain extension implanted with Sb show 10% improvement of Ion/Ioff characteristics without degradation of drain-induced barrier lowering compared to the As.\",\"PeriodicalId\":6548,\"journal\":{\"name\":\"2014 20th International Conference on Ion Implantation Technology (IIT)\",\"volume\":\"22 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 20th International Conference on Ion Implantation Technology (IIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IIT.2014.6940047\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 20th International Conference on Ion Implantation Technology (IIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIT.2014.6940047","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Formation of Source/Drain extension by Antimony implantation for high performance DRAM peripheral transistors
We have investigated properties of Antimony implanted Si such as crystalline defect, dopant distribution, and sheet resistance before and after annealing using TEM, SIMS, and 4-point probe. The sheet resistance of Sb implanted Si shows 35% lower than Arsenic, even though junction depth is 25% shallower. Electrical behaviors of Sorce/Drain extension implanted with Sb show 10% improvement of Ion/Ioff characteristics without degradation of drain-induced barrier lowering compared to the As.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
