2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)最新文献_第8页

Analysis of thermal effects of through silicon via in 3D IC using Infrared microscopy 用红外显微镜分析三维集成电路中硅通孔的热效应

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI: 10.1109/IITC-MAM.2015.7325654

Yoonhwan Shin, S. Kim, Sungdong Kim

引用次数: 1

Electromigration-limited reliability of advanced metallization for memory devices 存储器件先进金属化的电迁移限制可靠性

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI: 10.1109/IITC-MAM.2015.7325650

Kyung-Tae Jang, Yong-Jin Park, Min-Woo Jeong, Seung-Min Lim, Han-Wool Ycon, Ju-Young Cho, Jin-Sub Shin, B. Woo, J. Bae, Yuchul Hwang, Young‐Chang Joo

{"title":"Electromigration-limited reliability of advanced metallization for memory devices","authors":"Kyung-Tae Jang, Yong-Jin Park, Min-Woo Jeong, Seung-Min Lim, Han-Wool Ycon, Ju-Young Cho, Jin-Sub Shin, B. Woo, J. Bae, Yuchul Hwang, Young‐Chang Joo","doi":"10.1109/IITC-MAM.2015.7325650","DOIUrl":"https://doi.org/10.1109/IITC-MAM.2015.7325650","url":null,"abstract":"As the design rule for memory devices shrinks, the reliability issue of electromigration (EM) is emerged due 10 the increase of high current density, therefore, the reliability for memory devices can be limited by EM failure of metal lines (Al. Cu. W). But EM reliability with respect to structures of interconnects is still underestimated even though EM behavior for each material has been reported for decades. Therefore, we investigated the kinetics of EM in various metal line and via in memory devices under direct current (DC) stressing because failure of metal interconnects depends not only on metal materials but also on structures of interconnects. Under EM tests, mean time failure of Al with W via was shorter than that of Cu with W via. These results came from abrupt failure behavior due to void nucleation and growth at Al with W via and gradual failure behavior at Cu with W via due to void generation and growth as well as conduction in Ta/TaN. Additionally. Cu with W via showed different behavior compared to Cu with Cu via. It can be explained that the joule heating between W and Cu interface caused lateral void expansion and resistance increases rapidly. And it was observed that W line had the longest lifetime of EM failure but the high resistivity of W should be considered for memory chip design. As the results, we conclude that Al has the weakest reliable property for EM reliability among Al. W and Cu metal lines and W via can affect the degradation of EM reliability. These results mean that reliability of Al and W interconnects beyond nanometer-scale should be improved to guarantee reliability in memory chip. This study could provide the guideline for the optimal materials for interconnects in highly-reliable memory chips.","PeriodicalId":6514,"journal":{"name":"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)","volume":"11 1","pages":"155-158"},"PeriodicalIF":0.0,"publicationDate":"2015-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76665187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Direct copper electrodeposition on novel CoMo diffusion barrier 新型CoMo扩散屏障上直接电沉积铜

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI: 10.1109/IITC-MAM.2015.7325637

Xu Wang, L. Cao, X. Qu

引用次数: 1

Improved NiSi contacts on Si by CF4 plasma immersion ion implantation for 14nm node MOSFETs CF4等离子体浸泡离子注入改善14nm节点mosfet在Si上的NiSi触点

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI: 10.1109/IITC-MAM.2015.7325616

Haitao Zhang, J. Duchaine, F. Torregrosa, Linjie Liu, B. Hollander, U. Breuer, S. Mantl, Qing-Tai Zhao

引用次数: 3

Resistive switching in oxides for nonvolatile memories and neuromorphic computing 用于非易失性存储器和神经形态计算的氧化物的电阻开关

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI: 10.1109/IITC-MAM.2015.7325622

S. Spiga

{"title":"Resistive switching in oxides for nonvolatile memories and neuromorphic computing","authors":"S. Spiga","doi":"10.1109/IITC-MAM.2015.7325622","DOIUrl":"https://doi.org/10.1109/IITC-MAM.2015.7325622","url":null,"abstract":"Summary form only given. Resistive switching (RS) phenomena in oxides have received a large interest for ultra-scaled and high-density non-volatile memories, and many prototypes have been proposed at industrial level. Recently, RS have been also exploited for new type of applications, such as reconfigurable logic and synaptic electronics. In the latter field, the interest is towards RS devices which can be used to fabricate artificial synapses, able to emulate the synaptic functions of biological synapses, and to be integrated with standard CMOS circuits to build neuromorphic systems. These RS devices, also named memristive systems, are of particular interest due to their simple two terminal structure, low power operation, high-scalability, low thermal budget fabrication and, depending on material system, easy integration into CMOS based platform. This talk will first introduce the current state of the art and materials systems investigated for non-volatile memories as well as synaptic devices for neuromorphic circuits, highlighting the materials/device differences versus target application. Then, the talk will present our recent advancements on HfO2 and Al-doped-HfO2 based RS devices. The oxide layers (binary and doped oxides) are deposited by atomic layer deposition and the resistive switching properties are analysed from micro- to nanoscale. The fabrication of high-density and nanoscale HfOx-based memristive devices is achieved by block-copolymer lithography. Furthermore, in view of application of these devices as synaptic elements, the long term plasticity, as potentiation and depression typical of biological synapses, are characterized by various pulsed operation schemes. Special emphasis is given to programming algorithms based on a train of identical pulses. It will be shown that a careful choice of the pulse amplitude/pulse width combination is fundamental to achieve an analogue modulation of the device.","PeriodicalId":6514,"journal":{"name":"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)","volume":"15 1","pages":"213-214"},"PeriodicalIF":0.0,"publicationDate":"2015-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80755868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Demonstration of new planar capacitor (PCAP) vehicles to evaluate dielectrics and metal barrier thin films 新型平面电容(PCAP)车辆的演示，以评估电介质和金属阻隔薄膜

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI: 10.1109/IITC-MAM.2015.7325646

Kevin L. Lin, J. Bielefeld, J. Chawla, C. Carver, R. Chebiam, J. Clarke, Jacob Faber, M. Harmes, T. Indukuri, C. Jezewski, R. Kasim, M. Kobrinsky, N. Kabir, B. Krist, Narendra V. Lakamraju, H. Lang, E. Mays, A. Myers, J. Plombon, K. Singh, J. Torres, H. Yoo

引用次数: 1

Reliability mechanisms and lifetime extrapolation methods for scaled interconnect technologies 规模化互连技术的可靠性机制和寿命外推方法

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI: 10.1109/IITC-MAM.2015.7325585

K. Croes, C. Wu, D. Kocaay, J. Bommels, Z. Tokei

引用次数: 2

In situ cleaning/passivation of surfaces for contact technology on III-V materials III-V材料接触技术表面的原位清洗/钝化

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI: 10.1109/IITC-MAM.2015.7325643

P. Rodriguez, L. Toselli, E. Ghegin, F. Nemouchi, N. Rochat, E. Martinez

引用次数: 0

Resistivity of sub-30 nm copper lines 30nm以下铜线的电阻率

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI: 10.1109/IITC-MAM.2015.7325595

J. Roberts, A. Kaushik, J. Clarke

引用次数: 18

Investigation of barrier formation and stability of self-forming barriers with CuMn, CuTi and CuZr alloys CuMn、CuTi和CuZr合金的势垒形成及自形成势垒的稳定性研究

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI: 10.1109/IITC-MAM.2015.7325640

M. Franz, R. Ecke, C. Kaufmann, J. Kriz, S. Schulz

引用次数: 3