新型CoMo扩散屏障上直接电沉积铜

Xu Wang, L. Cao, X. Qu
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引用次数: 1

摘要

本文采用以硫酸铜和乙二胺为配体的碱性电解液在新型合金屏障CoxMoy薄膜上直接电沉积Cu,并比较了碱性电解液和H2SO4-CuSO4酸性电解液的电沉积效果。在碱性浴中,Cu在Co1Mo3上的成核密度远高于酸性浴。结果表明,随着Co含量的增加,CoxMoy薄膜中的Cu岛密度增大,表面粗糙度降低。结果表明,Cu与Co之间的结合力优于Cu与Mo之间的结合力,这影响了Cu薄膜的初始成核行为和表面粗糙度。在无添加剂的碱性镀液中,成功地在覆盖图案晶圆的5 nm Co1Mo3层上电镀出均匀的共形铜。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Direct copper electrodeposition on novel CoMo diffusion barrier
In this work, an alkaline electrolyte containing copper sulfate and ethanediamine (En) as ligand was used for direct Cu electrodeposition on novel alloy barrier CoxMoy films and comparison was made between alkaline bath and H2SO4-CuSO4 acidic bath. In alkaline bath, the nucleation density of Cu on Co1Mo3 is much higher than that in acidic bath. It is found that the Cu island density increases and the surface roughness decreases with the higher content of Co in CoxMoy films. Results show that adhesion between Cu and Co is better than that between Cu and Mo, which affects initial nucleation behavior and surface roughness of the deposited Cu films. Uniform and conformal copper was successfully electroplated on 5 nm Co1Mo3 layers covered patterned wafers in alkaline bath without additives.
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