Influence of the substrate on the solid-state reaction of ultra-thin Ni film with a In0.53Ga0.47As under-layer by means of full 3D reciprocal space mapping

Abstract

We studied the solid-state reaction of Ni thin films with InGaAs layers grown on InP or Si substrates. The inter-metallics obtained carried an hexagonal structure, but yielded a difference in orientation regarding either the substrates or the annealing temperature.