2010 35th IEEE Photovoltaic Specialists Conference最新文献_第5页

Ultrasonically sprayed Zinc sulfide buffer layers for Cu(In,Ga)(S,Se)2 solar cells 超声喷涂Cu(In,Ga)(S,Se)2太阳能电池硫化锌缓冲层

2010 35th IEEE Photovoltaic Specialists Conference Pub Date : 2010-06-20 DOI: 10.1109/PVSC.2010.5614155

C. Fella, S. Buecheler, D. Guettler, J. Perrenoud, A. Uhl, A. Tiwari

引用次数: 3

Preparation of β-Cu (In,Ga)3Se5 thin films for wide band gap absorber for top cell in CIGS tandem structure CIGS串联结构顶层电池宽禁带吸收膜β-Cu (In,Ga)3Se5薄膜的制备

2010 35th IEEE Photovoltaic Specialists Conference Pub Date : 2010-06-20 DOI: 10.1109/PVSC.2010.5614624

J. Kim, Y. Shin, B. Ahn

引用次数: 1

Towards 19% efficient industrial PERC devices using simultaneous front emitter and rear surface passivation by thermal oxidation 朝向19%效率的工业PERC装置，同时采用前发射极和后表面热氧化钝化

2010 35th IEEE Photovoltaic Specialists Conference Pub Date : 2010-06-20 DOI: 10.1109/PVSC.2010.5614048

S. Mack, U. Jager, Gero Kastner, E. A. Wotke, U. Belledin, A. Wolf, R. Preu, D. Biro

引用次数: 39

HW-CVD deposited μc-Si:H for the inverted heterojunction solar cell HW-CVD沉积了反向异质结太阳能电池的μc-Si:H

2010 35th IEEE Photovoltaic Specialists Conference Pub Date : 2010-06-20 DOI: 10.1109/PVSC.2010.5614432

Y. Matsumoto, M. Ortega, V. Sanchez, F. Wunsch, J. Urbano

{"title":"HW-CVD deposited μc-Si:H for the inverted heterojunction solar cell","authors":"Y. Matsumoto, M. Ortega, V. Sanchez, F. Wunsch, J. Urbano","doi":"10.1109/PVSC.2010.5614432","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614432","url":null,"abstract":"P-type-microcrystalline-silicon / n-type-crystalline-silicon hetero-junction solar cell has been prepared by means of hot-wire chemical vapor deposition (HW-CVD) technique. The solar cell structure was illuminated on the opposite side of the normally-formed heterojunction. With this inverted structure, the photovoltaic cell has the design potential to improve the light-incident surface-texturing with the possibility to avoid the use of transparent conducting oxide (TCO). Solar cells were fabricated on Czochralsky (CZ)-grown phosphorous-doped crystalline-silicon (c-Si) substrates within 0.5 to 1 ohm-cm. HW-CVD has employed for the deposition of a very thin intrinsic hydrogenated amorphous silicon (i-a-Si) as a buffer-layer as a heterojunction interface, and boron-doped hydrogenated microcrystalline silicon (p-μc-Si) on c-Si substrate. The tungsten catalyst temperature (Tfil) was settled to 1600 °C and 1950 °C for i-a-Si and p-μc-Si films, respectively. Silane (SiH4), hydrogen (H2) and diluted diborane (B2H6) gases were used for p-μc-Si at the substrate temperatures (Tsub) of 200 °C. The obtained I–V characteristics under simulated solar radiation at 100mW/cm2 are: Jsc =26.1 mA/cm2; Voc = 545 mV; Jm = 21.4 mA/cm2; Vm = 410 mV; FF = 61.7%, with total area efficiency of η= 8.8%. The solar cell has great potential to improve its conversion efficiency with proper surface passivation and antireflection coat.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"72 1","pages":"001450-001455"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88226656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Long-term performance of the first grid-connected, building-integrated amorphous silicon PV installation in Brazil 巴西首个并网、建筑一体化非晶硅光伏装置的长期性能

2010 35th IEEE Photovoltaic Specialists Conference Pub Date : 2010-06-20 DOI: 10.1109/PVSC.2010.5617021

R. Ruther, L. Nascimento, J. Urbanetz Junior, P. Pfitscher, T. Viana

引用次数: 9

Decoupling charge carrier collection and metallization geometry of back-contacted back-junction silicon solar cells by using insulating thin films 利用绝缘薄膜对背接触背结硅太阳能电池的电荷载流子收集和金属化几何进行解耦

2010 35th IEEE Photovoltaic Specialists Conference Pub Date : 2010-06-20 DOI: 10.1109/PVSC.2010.5614640

C. Reichel, M. Reusch, F. Granek, M. Hermle, S. W.

{"title":"Decoupling charge carrier collection and metallization geometry of back-contacted back-junction silicon solar cells by using insulating thin films","authors":"C. Reichel, M. Reusch, F. Granek, M. Hermle, S. W.","doi":"10.1109/PVSC.2010.5614640","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614640","url":null,"abstract":"Back-contacted back-junction silicon solar cells with a large emitter coverage (point-like base contacts) and a small emitter coverage (point-like emitter and base contacts) have been fabricated and analyzed. These solar cells feature an insulating thin film on the rear side in order to decouple the charge carrier collection geometry and the geometry of the metallization. It has been found, that for the investigated solar cells an increased collection efficiency is observed due to a significant reduction of electrical shading losses. Thus, high short-circuit currents could be achieved for both solar cell structures. Different insulating thin films, such as ALD Al2O3 and PECVD SiOx have been investigated. It has been found that ALD layers are already insulating for a thinner film thickness. By applying these insulating thin films to the investigated solar cell structures no significant shunts are introduced. For solar cells on 1 Ωcm n-type material and with a large emitter coverage an efficiency of 21.9% (Voc = 673 mV, Jsc = 40.6 mA/cm2, FF = 80.1%) could be obtained and for solar cells with a small emitter coverage an efficiency of 22.7% (Voc = 706 mV, Jsc = 41.0 mA/cm2, FF = 78.5%) has been achieved.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"41 1","pages":"001034-001038"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83875792","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 22

Role of exciton blocking layers as optical spacer in CuPc/C60 based organic solar cells 激子阻挡层在CuPc/C60基有机太阳能电池中的光学间隔层作用

2010 35th IEEE Photovoltaic Specialists Conference Pub Date : 2010-06-20 DOI: 10.1109/PVSC.2010.5616793

D. Datta, S. Sundar Kumar Iyer, Satyendra Kumar

{"title":"Role of exciton blocking layers as optical spacer in CuPc/C60 based organic solar cells","authors":"D. Datta, S. Sundar Kumar Iyer, Satyendra Kumar","doi":"10.1109/PVSC.2010.5616793","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5616793","url":null,"abstract":"The role of exciton blocking layer (EBL) in organic solar cells have been under intense investigation in the recent past. Although BCP (bathocuproine) has been commonly used as an EBL in CuPc/C60 based devices, its role as an effective optical spacer to increase the optical electric field intensity at the active layers, needs further investigation. In this work, using numerical techniques, we study the role of BCP as an optical spacer in CuPc/C60 based devices. For comparison, a higher refractive index material (TiOx; titanium suboxide) was also used. The optical constants of the BCP layer was extracted using spectroscopic ellipsometry using Tauc-Lorentz model dielectric function. The maximum device photocurrent density (Jsc-max) was simulated using transfer matrix formalism and exciton diffusion dynamics. The results with BCP as an optical spacer indicate that although a high gain in photocurrent can be obtained for devices with low active layer thicknesses, the enhancement in photocurrent from an already optimized device can at best be from 93.7 A/m2 to 98.7 A/m2, corresponding to a gain of only 5.3 %. Using a higher refractive index material such as TiOx, the current density for an already optimized device can at best be enhanced from 93.7 A/m2 to 97.5 A/m2, a gain of only 4 %. Overall, our results reveal that although the EBL acts as an optical spacer, the improvement in device absorption due to the optical effect is limited for an already optimized device. This indicates that the well known improvement in device performance by incorporating the buffer layer should be primarily related to other properties such as exciton blocking, electron transport, and avoiding acceptor damage during cathode deposition.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"94 1","pages":"000508-000512"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83912071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Alternative approaches for low temperature front surface passivation of interdigitated back contact silicon heterojunction solar cell 交叉后接触硅异质结太阳能电池低温前表面钝化的几种方法

2010 35th IEEE Photovoltaic Specialists Conference Pub Date : 2010-06-20 DOI: 10.1109/PVSC.2010.5616755

B. Shu, U. Das, J. Appel, B. McCandless, S. Hegedus, R. Birkmire

引用次数: 20

Micro-optic solar concentration and next-generation prototypes 微光学太阳能聚光和下一代原型

2010 35th IEEE Photovoltaic Specialists Conference Pub Date : 2010-06-20 DOI: 10.1109/PVSC.2010.5616788

J. Karp, E. Tremblay, J. Ford

引用次数: 9

The effect of CdTe deposition temperature on device properties of different TCOs and glass substrates CdTe沉积温度对不同tco和玻璃基板器件性能的影响

2010 35th IEEE Photovoltaic Specialists Conference Pub Date : 2010-06-20 DOI: 10.1109/PVSC.2010.5616929

R. Dhere, M. Bonnet-eymard, Emilie Charlet, E. Peter, J. Duenow, H. Moutinho, Jian V. Li, M. Scott, D. Albin, T. Gessert

引用次数: 3