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2007 7th IEEE Conference on Nanotechnology (IEEE NANO)最新文献

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Electron spin resonance imaging with AFM using near field microwave techniques 近场微波技术的原子力显微镜电子自旋共振成像
2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI: 10.1109/NANO.2007.4601224
F.X. Li, M. Tabib-Azar, J. Adin Mann
{"title":"Electron spin resonance imaging with AFM using near field microwave techniques","authors":"F.X. Li, M. Tabib-Azar, J. Adin Mann","doi":"10.1109/NANO.2007.4601224","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601224","url":null,"abstract":"An unpaired electron possess two quantum states when external magnetic field presents. The energy gap between two quantum states increases linearly with the applied external magnetic field strength. The electron spin resonance (ESR) peaks at the moment that the microwave wave photo energy is exactly equal to the electron energy gap. Previous researches demonstrated spatially resolved electron spin resonances using evanescent microwave magnetic-dipole probe at 3.7 GHz on the ruby surface. The minimum number of detected electron spin centers was in the range of 20,000 to 30,000. This paper is to present a new ESR detection technique by integrating the atomic force microscopy (AFM) with near field microwave probe. With smaller probe tips, the spatially confined magnetic field is expected to increase the sensitivity of ESR detections. Both AFM and near field microwave probe techniques are non-destructive and non-invasive measurement techniques. Thus, the new technique will be a powerful instrument for many applications that include the detection of material defect pockets, detecting free radicals in biological tissues, and the analysis of structure and dynamics of biomembranes. Our ultimate objective is to spatially detect single electron spin center and use the single electron as one quantum bit in future spintronic devices.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"27 1","pages":"422-425"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73328062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Carbon nanotube bundle-based low loss integrated inductors 基于碳纳米管束的低损耗集成电感
2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI: 10.1109/NANO.2007.4601288
A. Nieuwoudt, Y. Massoud
{"title":"Carbon nanotube bundle-based low loss integrated inductors","authors":"A. Nieuwoudt, Y. Massoud","doi":"10.1109/NANO.2007.4601288","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601288","url":null,"abstract":"In this paper, we propose low loss on-chip inductors for mixed-signal circuits leveraging single-walled carbon nanotube (SWCNT) bundles. We develop a model for the high frequency current re-distribution in SWCNT bundles, which we find can have a large effect on the resistance and quality factor of nanotube-based inductors. We compare the performance of optimized inductors realized using SWCNT bundles and standard copper technology. The results indicate that SWCNT bundle-based inductors can provide up to a 144% increase in quality factor. The higher quality factors of SWCNT bundle-based inductors enable up to an 80% power consumption decrease in low noise amplifiers, which are critical circuits in integrated wireless receivers.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"79 1","pages":"714-718"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76651766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
The effect of substrates temperature on pentacene thin films prepared by organic thermal evaporator 衬底温度对有机热蒸发器制备并五苯薄膜的影响
2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI: 10.1109/NANO.2007.4601206
A. Chanhom, J. Nukeaw
{"title":"The effect of substrates temperature on pentacene thin films prepared by organic thermal evaporator","authors":"A. Chanhom, J. Nukeaw","doi":"10.1109/NANO.2007.4601206","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601206","url":null,"abstract":"The influence of substrate temperature on the physical and optical characteristics of pentacene thin films have been investigated by the experiment and using atomic force microscopy and UV- Visible spectrophotometer. The pentacene thin films were prepared on glass substrates by organic source evaporating system and the substrate temperature was varied between room temperature and 120degC. The results of AFM images and light absorbance indicate that the variation of substrate temperature has a distinguishable impact on both physical and optical properties of pentacene thin films. The AFM images show the increasing morphological grain size when the substrate temperature is risen. In addition, the thin films absorbance graph shown the dominant peaks at 1.82 eV, 1.97 eV, 2.14 eV 2.30 and 2.50 eV are all clearly diminished with increasing substrate temperature. The effect of substrate temperature on pentacene thin film properties are described in detail.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"33 1","pages":"349-352"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81306661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Nano-biosensor base on protected glucose oxidase nanoparticles 基于受保护的葡萄糖氧化酶纳米颗粒的纳米生物传感器
2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI: 10.1109/NANO.2007.4601258
Keum-Ju Lee, Dong-hwa Yun, Min-Jung Song, Woo-Jin Lee, S. Hong
{"title":"Nano-biosensor base on protected glucose oxidase nanoparticles","authors":"Keum-Ju Lee, Dong-hwa Yun, Min-Jung Song, Woo-Jin Lee, S. Hong","doi":"10.1109/NANO.2007.4601258","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601258","url":null,"abstract":"Covalent modification of redox enzyme-glucose oxidase (GOx)-within porous composite organic/inorganic network was described. The polymerization of organic/inorganic network was synthesized via a three-step process, which consisted of a covalent modification of GOx followed by a polymerization between modified enzyme and methacryloxypropyltrimethoxysilane (MPS) and then hydrolysis and crosslinking. The synthesized GOx nanoparticles were less than 20 nm in size. They were observed by transmission electron microscope (TEM) and analyzed using Fourier transform infrared spectrophotometer (FT-IR). The nano-biosensor based on protected GOx nanoparticles demonstrated extension of primarily lifetime and detection of extremely limited concentration (pM) in human serum. The hybrid organic/inorganic network was determined by application of protected glucose oxidase nanoparticles in electrochemical nano-biosensor. The hybrid enzyme nanostructures were expected as a method to stabilize enzyme for other biocatalytic application.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"20 1","pages":"578-582"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81337187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Characterization of laterally aligned carbon nanotubes formed by AC dielectrophoresis 碳纳米管横向排列的表征
2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI: 10.1109/NANO.2007.4601209
H. Rokadia, S. Tung, M. Gordon
{"title":"Characterization of laterally aligned carbon nanotubes formed by AC dielectrophoresis","authors":"H. Rokadia, S. Tung, M. Gordon","doi":"10.1109/NANO.2007.4601209","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601209","url":null,"abstract":"We investigate the relationship between the parameters of the AC electric field and the properties of dielectrophoretically aligned carbon nanotubes (CNTs) between two triangular-shaped micro-electrodes. Specifically, the effects of electrode dimensions, magnitude and frequency of the applied potential, and fluid velocity due to electrothermal force on the resultant aligned CNT trace width are examined. Parameters of the electric field are computed numerically using Ansoftreg. Both transient and steady state results are studied. The transient results shows the CNT trace grows linearly initially. This is followed by an asymptotic widening of the trace before a constant steady-state trace width is reached. The steady-state trace width (1) increases with electrode tip angle, (2) increases with increasing potential, and (3) is not affected by the frequency of the applied potential. The results of the present study provide an important guideline for designing CNT based devices fabricated by dielectrophoresis.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"17 1","pages":"361-366"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81673824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
New NRZ-mode resonant tunneling bistable-to-monostable-to-bistable transition logic element operating up to 36 Gb/s 新型nrz模式共振隧道双稳态到单稳态到双稳态转换逻辑元件，运行速度高达36gb /s
2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI: 10.1109/NANO.2007.4601418
Hyungtae Kim, Seongjin Yeon, K. Seo
{"title":"New NRZ-mode resonant tunneling bistable-to-monostable-to-bistable transition logic element operating up to 36 Gb/s","authors":"Hyungtae Kim, Seongjin Yeon, K. Seo","doi":"10.1109/NANO.2007.4601418","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601418","url":null,"abstract":"In this paper, we present new resonant tunneling bistable-to-monostable-to-bistable transition logic element with non-return-to-zero (NRZ) mode output. The proposed circuit is composed of resonant tunneling diode (RTD)/high electron mobility transistor (HEMT) series connection (RHS) and RTD/HEMT parallel connection (RHP). Novel high-speed and low-power NRZ delayed flip-flop (D-F/F) operation has been successfully achieved using RTD/HEMT integration technology on an InP substrate. The operation of the fabricated circuit was confirmed up to 36 Gb/s with a very low power dissipation of about 3 mW at a power supply voltage of 0.9 V.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"12 1","pages":"1288-1291"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82088387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Micro chip with nanostructured membranes for cell morphology monitoring 用于细胞形态监测的纳米结构膜微芯片
2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI: 10.1109/NANO.2007.4601195
Jinjiang Yu, C. Chao, Ching-Hsiang Cheng, Qingjun Liu, Lidan Xiao, Mo Yang
{"title":"Micro chip with nanostructured membranes for cell morphology monitoring","authors":"Jinjiang Yu, C. Chao, Ching-Hsiang Cheng, Qingjun Liu, Lidan Xiao, Mo Yang","doi":"10.1109/NANO.2007.4601195","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601195","url":null,"abstract":"We present a novel nanostructured micro cell chip with impedance spectroscopy for monitoring cell morphology change non-invasively, in real time and independent of any fluorescent or radioactive probes. The key strategy is to integrate the nanoporous alumina membrane with silicon based microfluidic devices for the impedance monitoring. In this configuration, the impedance of even single cell can be measured at the low frequency range but not be affected by the electrode polarization. The KYSE30 human oesophageal cancer cells have been successfully cultured on nanoporous alumina membrane. Initial electrochemical experiments with lipid layers have been done to testify the functionality of this device. Further experiments for cancer cells will be explored in near future.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"18 1","pages":"304-307"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82492205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Image-based hysteresis modeling and compensation for piezo-scanner utilized in AFM AFM中压电扫描仪基于图像的迟滞建模与补偿
2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI: 10.1109/NANO.2007.4601147
Yudong Zhang, Yongchun Fang, Xianwei Zhou, Xiaokun Dong
{"title":"Image-based hysteresis modeling and compensation for piezo-scanner utilized in AFM","authors":"Yudong Zhang, Yongchun Fang, Xianwei Zhou, Xiaokun Dong","doi":"10.1109/NANO.2007.4601147","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601147","url":null,"abstract":"As an important component of Atomic Force Microscope (AFM), piezo-scanner exhibits some undesired nonlinear characteristics, among which the inherent hysteresis largely decreases the scanning rate and resolution of AFM. To alleviate this problem, an image-based approach is proposed in this paper to model and then compensate for the hysteresis behavior of the piezo-scanner. Specifically, some scanning images over calibration grating are utilized to identify the parameters of the classical Preisach model (CPM) of hysteresis. Based on the obtained model, an inversion-based technique is adopted to design a compensator for the hysteresis of piezo-scanner. The proposed algorithm presents such advantages of low cost and little complexity since no nano-sensor is required to collect identification data. Some simulation results are included to demonstrate the performance of the proposed strategy.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"10 1","pages":"90-95"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78643795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Overlay metrology for next generation lithography at CMS 覆盖计量的下一代光刻在CMS
2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI: 10.1109/NANO.2007.4601351
Y. Ku, H. Tai, Chia-Teng Chang
{"title":"Overlay metrology for next generation lithography at CMS","authors":"Y. Ku, H. Tai, Chia-Teng Chang","doi":"10.1109/NANO.2007.4601351","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601351","url":null,"abstract":"The center for measurement standards (CMS) has a research program in optical overlay metrology. The main goal of this work is to improve overlay measurement accuracy. Two main threads are developed to the work - novel in-chip overlay target design, and best algorithm. The former is hoped to prove a capability for measuring overlay error inside the active area of product devices. The later is for extracting the most from image detail.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"187 1","pages":"998-1001"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78966691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Schottky barrier engineering in carbon nanotube with various metal electrodes 碳纳米管中各种金属电极的肖特基势垒工程
2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI: 10.1109/NANO.2007.4601168
D. Perello, M. Kim, D. Cha, G. Han, D. Bae, S. Jeong, Y. H. Lee, M. Yun
{"title":"Schottky barrier engineering in carbon nanotube with various metal electrodes","authors":"D. Perello, M. Kim, D. Cha, G. Han, D. Bae, S. Jeong, Y. H. Lee, M. Yun","doi":"10.1109/NANO.2007.4601168","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601168","url":null,"abstract":"We investigated carbon nanotube field effect transistors (CNT FET) utilizing semiconducting single-walled carbon nanotubes (SWCNTs). Multiple devices, each of different metal source and drain contacts, were fabricated on long (~11 micron) SWCNT. Large contact resistances around four MOmega were observed at room temperature. Low temperature measurements yielded varying contact resistances for these same devices. Transport properties of the devices follow to the Schottky contact and Poole-Frenkel model with measured 25-41 meV barriers for the devices.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"46 1","pages":"189-193"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76373719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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