2007 7th IEEE Conference on Nanotechnology (IEEE NANO)最新文献_第10页

Self-assembled growth on flexible alumina and nanoporous silicon templates 柔性氧化铝和纳米多孔硅模板上的自组装生长

2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI: 10.1109/NANO.2007.4601404

K. Garre, M. Cahay, P. Kosel, J. Fraser, D. J. Lockwood, V. Semet, V. Binh, B. Kanchibhotla, Supriyo Bandyopadhyay, B. Das

{"title":"Self-assembled growth on flexible alumina and nanoporous silicon templates","authors":"K. Garre, M. Cahay, P. Kosel, J. Fraser, D. J. Lockwood, V. Semet, V. Binh, B. Kanchibhotla, Supriyo Bandyopadhyay, B. Das","doi":"10.1109/NANO.2007.4601404","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601404","url":null,"abstract":"Several nanoscale arrays of metallic, semiconductor, and organic carbon compounds (carbon nanopearls) have been fabricated on nanoporous flexible alumina and silicon templates based on a new self-assembly growth mode. They were obtained using pulsed laser deposition, thermal evaporation, e-beam evaporation, or RF magnetron sputtering. The different moieties that were observed include nanodomes and nanodots (gold, nickel, cobalt, and aluminum nitride), nanonecklaces (carbon nanopearl), and nanopinetrees (gold) self assembled on flexible alumina templates. A nanoneedle array was also self assembled by e-beam evaporation of nickel on silicon substrates that were rendered nanoporous by the use of a porous alumina mask. The physical processes underpinning the new self assembly growth mode have been studied based on extensive characterization of the templates prior to and after deposition of the various metallic, semiconductor, and organic compounds. These include atomic force microscopy (AFM), X-ray diffraction (XRD) analysis, Raman spectroscopy and field emission-scanning electron microscopy (FE-SEM). Some of the arrays have been tested as potential candidates for new cold cathode arrays for vacuum electronic applications using the scanning electron field emission microscopy (SAFEM) technique.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83747439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Novel transport mechanism of SiGe dot MOS tunneling diodes SiGe点MOS隧道二极管的新型输运机制

2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI: 10.1109/NANO.2007.4601423

P. Kuo, C. Lin, C. Peng, Y.-C. Fu, C. Liu

引用次数: 0

Atomic-scale analysis of polydiacetylene nanowires by scanning tunneling microscopy 用扫描隧道显微镜分析聚二乙炔纳米线的原子尺度

2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI: 10.1109/NANO.2007.4601352

R. Giridharagopal, K. Kelly

引用次数: 0

Electroluminescence from strained SiGe quantum dot light-emitting diodes 应变SiGe量子点发光二极管的电致发光

2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI: 10.1109/NANO.2007.4601278

T.-H. Cheng, M. Liao, C. Liu

{"title":"Electroluminescence from strained SiGe quantum dot light-emitting diodes","authors":"T.-H. Cheng, M. Liao, C. Liu","doi":"10.1109/NANO.2007.4601278","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601278","url":null,"abstract":"In order to overcome the speed limitation of electrical interconnects, we integrate ultra large scale integrated (ULSI) circuits with the electro-optics. Besides the modulator, both the light emitting diode (LED) and the detector are essential to achieve this goal. In order to get greater functionality, we integrate Si chip with the Si based electro-optics. For the time being, the light emitter is the key point of the electro-optics based on Si. In this work, the metal-oxide-semiconductor tunneling diode is used to emit electroluminescence. Raman spectroscopy reveals that the expected pure Germanium (Ge) quantum dot (QD) grown by ultra high vacuum chemical vapor deposition (UHVCVD) at 625degC exhibits significant intermixing with the average Ge composition of ~ 56%. It also shows that the top SiGe quantum dot of the 20-layer QD sample (66% relaxation) have more relaxation than the 5-layer QD sample (58% relaxation). The photoluminescence (PL) emission peak intensity from the 20-layer QD is increasing with the temperature decreasing. Besides the 1.1 mum infrared from the band edge of Si, the 1.5 mum infrared emission due to the radiative recombination between the electrons in the Si conduction band and the holes in the SiGe valence band is also observed. The emission line shape can be fitted by the electron-hole-plasma recombination model. The electroluminescence from the top SiGe quantum dot shows that the 20-layer QD sample (0.76% compressive strain) has the higher emission peak energy at ~0.84 eV as compared with the 5-layer QD sample (0.93% compressive strain) with the emission peak energy at ~0.82 eV.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85458222","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High density integrated capacitors using multi-walled carbon nanotubes 采用多壁碳纳米管的高密度集成电容器

2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI: 10.1109/NANO.2007.4601215

A. Nieuwoudt, Y. Massoud

引用次数: 4

Current-induced breakdown of carbon nanofibers for interconnect applications 用于互连应用的碳纳米纤维的电流诱导击穿

2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI: 10.1109/NANO.2007.4601204

H. Kitsuki, M. Suzuki, Q. Ngo, K. Gleason, P. Wilhite, A. Cassell, Jun Li, C. Yang

引用次数: 2

Spin-polarized thermionic emission at the interface of ferromagnetic metal and organic semiconductor 铁磁金属与有机半导体界面的自旋极化热离子发射

2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI: 10.1109/NANO.2007.4601175

Lei Zhang, Hao Dong, Ning Deng, Min Ren, Jiuning Hu, Pei-yi Chen

引用次数: 0

Electronic and transport properties of graphene nanoribbons 石墨烯纳米带的电子和输运特性

2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI: 10.1109/NANO.2007.4601252

Z. Hou, M. Yee

引用次数: 13

Examining amplification and nonlinear properties of novel Quantum Well Optical Fiber (QWOF) for future photonic communications 研究未来光子通信中新型量子阱光纤(QWOF)的放大和非线性特性

2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI: 10.1109/NANO.2007.4601341

L. Lee, Ru Zhang, Jin Wang, Bojun Yang

引用次数: 0

Quantum bit controller and observer circuits in SOS-CMOS technology for gigahertz low-temperature operation 用于千兆赫低温工作的量子位控制器和观测器电路

2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI: 10.1109/NANO.2007.4601417

S. Ramesh Ekanayake, T. Lehmann, A. Dzurak, R. G. Clark

{"title":"Quantum bit controller and observer circuits in SOS-CMOS technology for gigahertz low-temperature operation","authors":"S. Ramesh Ekanayake, T. Lehmann, A. Dzurak, R. G. Clark","doi":"10.1109/NANO.2007.4601417","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601417","url":null,"abstract":"Quantum bit (qubit) control and readout requires controller-qubit-observer systems for rapid control signal generation and injection to the qubit gates, and observation of their final state projections. Conventionally, for solid-state qubits, this is achieved by generating the control signal at 300 K and transmitting it along very long coaxial cables that span from 300 K to sub-K (typically les 500 mK), then reading out the response from charge proximity sensors such as single-electron transistors along similar lengths of cable. Our approach is to fabricate the classical controller and observer circuits using a commercial foundry processed silicon-on-sapphire (SOS) RFCMOS technology for operation at low temperatures (either at 4.2 K, 1 K, or sub-K). We have demonstrated SOS-CMOS NFET and PFET device operation at 4.2 K, and sub-K that showed deviations from their 300 K characteristics, but with further experiments these were shown to have minimal effects on control circuit function. Using these results, we have fabricated and demonstrated a low-power proof-of-concept SOS-CMOS controller circuit (monostable 100 ps voltage-pulse generator) that can operate at sub-K temperatures in a dilution refrigerator. We briefly discuss experimental and conceptual schemes with which we can develop qubit control systems for cryogenic and lower temperatures. These low temperature experiments also demonstrate that commercial SOS RF-CMOS technology can be feasible for other low temperature and low power applications.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89330063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9