2007 7th IEEE Conference on Nanotechnology (IEEE NANO)最新文献

筛选
英文 中文
Dry spinning polymeric nano/microfiber arrays using glass micropipettes with controlled porosities and fiber diameters 干纺丝聚合物纳米/超细纤维阵列使用玻璃微移液管控制孔隙率和纤维直径
2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI: 10.1109/NANO.2007.4601291
A. Nain, A. Gupta, C. Amon, M. Sitti
{"title":"Dry spinning polymeric nano/microfiber arrays using glass micropipettes with controlled porosities and fiber diameters","authors":"A. Nain, A. Gupta, C. Amon, M. Sitti","doi":"10.1109/NANO.2007.4601291","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601291","url":null,"abstract":"We present a method for dry spinning polymeric nano/microfiber arrays. In this technique polymer solution is continuously ejected from a stationary glass micropipette and the fibers are deposited as continuous arrays in parallel and complex geometrical configurations on a rotating substrate mounted on to a translation stage. As the polymer solution exits the glass micropipette, ambient air is used to evaporate the solvent, thus solidifying the fiber which is then deposited on the rotating substrate. For a given polymer, altering the processing and material parameters allows depositing fiber arrays with highly tunable porosities and uniform fiber diameters. The fiber array porosity is observed to decrease with increasing angular velocity of the rotating substrate at a constant translational stage velocity. Fiber array breaking strength experiments as a function of porosity show higher loads required to break low porosity arrays, which is critical in designing stronger materials. Additionally, single and double layered biological scaffolds fabricated using this technique are seeded with mouse C2C12 cells and cellular dynamics of adhesion, migration and proliferation is investigated.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"2015 1","pages":"728-732"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87055889","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Novel transport mechanism of SiGe dot MOS tunneling diodes SiGe点MOS隧道二极管的新型输运机制
2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI: 10.1109/NANO.2007.4601423
P. Kuo, C. Lin, C. Peng, Y.-C. Fu, C. Liu
{"title":"Novel transport mechanism of SiGe dot MOS tunneling diodes","authors":"P. Kuo, C. Lin, C. Peng, Y.-C. Fu, C. Liu","doi":"10.1109/NANO.2007.4601423","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601423","url":null,"abstract":"The blockage of the hole transport due to the excess hole in SiGe quantum dots was observed in the metal-oxide-semiconductor (MOS) tunneling diodes for the first time. The hole tunneling current from Pt gate electrode to p-type Si dominates the inversion current at the positive gate bias and is seven order of magnitude higher than the Al gate/oxide/p-Si device. The SiGe quantum dots confine the excess holes in the valence band, and form the repulsive barrier to reduce the hole transport current from Pt to SiGe quantum dots by three order of magnitude as compared to the Pt/oxide/p-Si device. This repulsive barrier also reduces the hole tunneling current from SiGe quantum dots to Pt for the accumulation current at positive gate bias.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"158 1","pages":"1309-1312"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87873347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Blue electroluminescence from metal/oxide/6H-SiC tunneling diodes 金属/氧化物/6H-SiC隧道二极管的蓝色电致发光
2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI: 10.1109/NANO.2007.4601279
Sun-Rong Jan, T.-H. Cheng, M. Liao, T. Hung, Y. Deng, C. Liu
{"title":"Blue electroluminescence from metal/oxide/6H-SiC tunneling diodes","authors":"Sun-Rong Jan, T.-H. Cheng, M. Liao, T. Hung, Y. Deng, C. Liu","doi":"10.1109/NANO.2007.4601279","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601279","url":null,"abstract":"Pt/oxide/n-6H-SiC tunneling diode has been fabricated using liquid phase deposited oxide as the tunneling oxide. At the negative bias, the electrons can be injected from the Pt gate to n-SiC, and recombine radiatively with the trapped holes in the defects near the oxide/SiC interface. The electroluminescence at room temperature from the SiC MOS tunneling diodes is observed for the first time. The light intensity decrease with the decreasing temperature. At the positive bias, the electron tunneling current from SiC to Pt gate is dominant, and the radiative recombination in SiC is not observed.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"9 1","pages":"674-677"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85135950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Self-assembled growth on flexible alumina and nanoporous silicon templates 柔性氧化铝和纳米多孔硅模板上的自组装生长
2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI: 10.1109/NANO.2007.4601404
K. Garre, M. Cahay, P. Kosel, J. Fraser, D. J. Lockwood, V. Semet, V. Binh, B. Kanchibhotla, Supriyo Bandyopadhyay, B. Das
{"title":"Self-assembled growth on flexible alumina and nanoporous silicon templates","authors":"K. Garre, M. Cahay, P. Kosel, J. Fraser, D. J. Lockwood, V. Semet, V. Binh, B. Kanchibhotla, Supriyo Bandyopadhyay, B. Das","doi":"10.1109/NANO.2007.4601404","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601404","url":null,"abstract":"Several nanoscale arrays of metallic, semiconductor, and organic carbon compounds (carbon nanopearls) have been fabricated on nanoporous flexible alumina and silicon templates based on a new self-assembly growth mode. They were obtained using pulsed laser deposition, thermal evaporation, e-beam evaporation, or RF magnetron sputtering. The different moieties that were observed include nanodomes and nanodots (gold, nickel, cobalt, and aluminum nitride), nanonecklaces (carbon nanopearl), and nanopinetrees (gold) self assembled on flexible alumina templates. A nanoneedle array was also self assembled by e-beam evaporation of nickel on silicon substrates that were rendered nanoporous by the use of a porous alumina mask. The physical processes underpinning the new self assembly growth mode have been studied based on extensive characterization of the templates prior to and after deposition of the various metallic, semiconductor, and organic compounds. These include atomic force microscopy (AFM), X-ray diffraction (XRD) analysis, Raman spectroscopy and field emission-scanning electron microscopy (FE-SEM). Some of the arrays have been tested as potential candidates for new cold cathode arrays for vacuum electronic applications using the scanning electron field emission microscopy (SAFEM) technique.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"74 1","pages":"1227-1230"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83747439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Monte Carlo simulation of spin-polarized transport in GaAs nanostructures GaAs纳米结构中自旋极化输运的蒙特卡罗模拟
2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI: 10.1109/NANO.2007.4601222
B. Tierney, S. Goodnick
{"title":"Monte Carlo simulation of spin-polarized transport in GaAs nanostructures","authors":"B. Tierney, S. Goodnick","doi":"10.1109/NANO.2007.4601222","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601222","url":null,"abstract":"An ensemble Monte Carlo program, in conjunction with an 8-band k.p self-consistent solver, is used to simulate the temporal and spatial evolution of the spin polarization of current through a GaAs/AlGaAs heterostructure with a source and drain defined as quantum point contacts that spin-polarize the current. Results relate the effect of an applied gate voltage on both the Dresselhaus and Rashba contributions of the D'yakanov-Perel spin-flip scattering mechanism, the predominant spin scattering mechanism in AlGaAs/GaAs heterostructures at 300 K. Results are presented on the simulation of a spin-FET structure using quantum point contacts (QPCs) as a spin polarizer and spin detector.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"19 1","pages":"414-417"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89546780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Integration of the micro thermal sensor and porous silicon as the gas diffusion layer for micro fuel cell 微热传感器与多孔硅作为微燃料电池气体扩散层的集成
2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI: 10.1109/NANO.2007.4601410
Chi-Yuan Lee, Shuo-Jen Lee, Ren-De Huang, C. Chuang
{"title":"Integration of the micro thermal sensor and porous silicon as the gas diffusion layer for micro fuel cell","authors":"Chi-Yuan Lee, Shuo-Jen Lee, Ren-De Huang, C. Chuang","doi":"10.1109/NANO.2007.4601410","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601410","url":null,"abstract":"This work employs porous silicon as a gas diffusion layer (GDL) in a micro proton exchange membrane fuel cell (muPEMFC) and a micro direct methanol fuel cell (muDMFC). Pt catalyst is deposited on the surface of, and inside, the porous silicon to improve its conductivity. Porous silicon with Pt catalyst replaces traditional GDL, and the Pt metal that remains on the rib is used to form a micro thermal sensor in a single lithographic process. The GDL was replaced by porous silicon and used in a muPEMFC and muDMFC. Wet etching is applied to a 500 mum-thick layer of silicon to yield fuel channels with a depth of 450 mum and a width of 200 mum. The pores in the fabricated structure had a diameter of 10 mum; the thickness of the structure was 50 mum. Therefore, the GDLs of the fuel cell were fabricated using macro-porous silicon technology. Porous silicon was fabricated by photoelectrochemical porous silicon etching. The top-side of the fuel channel was exposed to light from a halogen lamp. The porous structure was fabricated at the bottom of the fuel channel and patterned by anodization; and the micro thermal sensors were integrated on the rib. The experimental results demonstrated that the maximums power density of muDMFC and muPEMFC were 1.784 mW/cm2 and 9.37 mW/cm2. 30SCCM and 2 M methanol were used with 10 mum holes, various humidities and heating temperatures.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"11 1","pages":"1252-1255"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90464449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Microrobot-based nanoindentation of an epoxy-based electrically conductive adhesive 环氧基导电胶粘剂的微机器人纳米压痕研究
2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI: 10.1109/NANO.2007.4601289
I. Mircea, S. Fatikow, A. Sill
{"title":"Microrobot-based nanoindentation of an epoxy-based electrically conductive adhesive","authors":"I. Mircea, S. Fatikow, A. Sill","doi":"10.1109/NANO.2007.4601289","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601289","url":null,"abstract":"Microrobot-based nanoindentation is a relatively new testing technique, which uses microrobot based methods for performing nanoindentation experiments. The use of the microrobot-based nanoindentation is a example how microrobotic technology can help the materials research. In this work, the hardness of an epoxy-based silver-filled electrically conductive adhesive (ECA) type PC 3002 has been determined using this method. Flat ECA specimens have been investigated after a first curing at 70degC for 120 minutes, respectively after a curing time of 150 minutes, 180 minutes, 240 minutes, 300 minutes, and finally after 325 minutes at the same temperature. The maximum indentation depth was 1 mum. The hardness of the ECA has shown an increase with the increase of the curing time at constant temperature. The set-up uses a Berkovich diamond tip for performing nanoindentation tests. The set-up requires calibrations with reference specimens (fused silica and sapphire) for calculating hardness and Young's modulus of the tested material. Preliminary results are very promising: by comparing the slope of the loading stage of the nanoindentation tests on different specimens, the difference in hardness can be qualitatively evidenced.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"23 1","pages":"719-722"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75857030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Real-time position error detecting in nanomanipulation using Kalman filter 基于卡尔曼滤波的纳米操作实时位置误差检测
2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI: 10.1109/NANO.2007.4601149
Lianqing Liu, N. Xi, Yilun Luo, Jiangbo Zhang, Guangyong Li
{"title":"Real-time position error detecting in nanomanipulation using Kalman filter","authors":"Lianqing Liu, N. Xi, Yilun Luo, Jiangbo Zhang, Guangyong Li","doi":"10.1109/NANO.2007.4601149","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601149","url":null,"abstract":"The main roadblock to atomic force microscope (AFM) based nanomanipulation is lack of real time visual feedback. Although the model based visual feedback can partly solve this problem, due to the complication of nano environment, it is difficult to accurately describe the behavior of nano-objects with a model. The modeling error will lead to an inaccurate feedback and a failed manipulation. In this paper, a Kalman filter is developed to real time detect this modeling error. During manipulation, the residual between the estimated behavior and the visual display behavior is real time updated. The residual's Mahalanobis distance is calculated and compared with an threshold to determine whether there is a position error. Once the threshold is exceeded, an alarm signal will be triggered to tell the system there is a position error. Furthermore, the position error can be on-line corrected by local scan method. With the assistance of Kalman filter and local scan, the position error not only can be real-time detected, but also can be online corrected. The visual display keeps matching with the real manipulation result during the whole manipulation process, which significantly improve the efficiency of the AFM based nano-assembly. Experiments of manipulating nano-particles are presented to verify the effectiveness of Kalman filter and local scan method.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"1 1","pages":"100-105"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88563233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Investigating the motion of molecular machines on surfaces by STM: The nanocar and beyond 用STM研究分子机器在表面上的运动:纳米车及以后
2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI: 10.1109/NANO.2007.4601180
Jun Zhang, A. Osgood, Y. Shirai, Jean‐François Morin, T. Sasaki, J. Tour, K. Kelly
{"title":"Investigating the motion of molecular machines on surfaces by STM: The nanocar and beyond","authors":"Jun Zhang, A. Osgood, Y. Shirai, Jean‐François Morin, T. Sasaki, J. Tour, K. Kelly","doi":"10.1109/NANO.2007.4601180","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601180","url":null,"abstract":"To build up true molecular machines and understand the mechanics of nanoscale motion and manipulation in molecular system, we have created and investigated a family of molecules based around the concept of the nanocar, which has the rolling wheels made of spherical fullerene or carborane molecules. Assisted by scanning tunneling microscopy (STM), we have successfully characterized and manipulated these molecules. In addition, we have observed the behavior of these systems when thermal energy is applied. These initial studies open a new realm of nano-sized mechanical, chemical, and electrical devices.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"1 1","pages":"243-246"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89710828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Discrete dopant induced electrical and thermal fluctuation in nanoscale SOI FinFET 离散掺杂剂诱导纳米SOI FinFET的电与热波动
2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI: 10.1109/NANO.2007.4601390
Yiming Li, Chih-Hong Hwang, Shao-Ming Yu, Hsuan-Ming Huang
{"title":"Discrete dopant induced electrical and thermal fluctuation in nanoscale SOI FinFET","authors":"Yiming Li, Chih-Hong Hwang, Shao-Ming Yu, Hsuan-Ming Huang","doi":"10.1109/NANO.2007.4601390","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601390","url":null,"abstract":"The International Roadmap for Semiconductors has forecasted a transition from conventional bulk device to siliconon-insulator (SOI) one, and then to multiple-gate SOI for high-performance devices. Impact of the discrete-dopant number and discrete-dopant position on device characteristics is crucial for nanoscale semiconductor devices. In this paper, the discrete dopant induced electrical and thermal fluctuation of 16 nm SOI FinFETs is for the first time explored. A three-dimensional \"atomistic\" device simulation with quantum hydrodynamic equation is proposed and performed for electrical and thermal characteristics of the discrete dopant fluctuated SOI FinFETs. Discrete dopants are statistically positioned in the 3D channel region to study associated carrier transportation characteristics, concurrently capturing \"dopant concentration variation\" and \"dopant position fluctuation\". Effect of the discrete-dopant-number- and discrete-dopant-position-induced fluctuations on device characteristic including variations of the lattice and electron temperatures are advanced. The large-scale computational statistics study provides us an insight into the fluctuation of electrical and thermal characteristics and mechanism of immunity against fluctuation in SOI FinFETs.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"147 ","pages":"1166-1169"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91552187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信