{"title":"GaAs纳米结构中自旋极化输运的蒙特卡罗模拟","authors":"B. Tierney, S. Goodnick","doi":"10.1109/NANO.2007.4601222","DOIUrl":null,"url":null,"abstract":"An ensemble Monte Carlo program, in conjunction with an 8-band k.p self-consistent solver, is used to simulate the temporal and spatial evolution of the spin polarization of current through a GaAs/AlGaAs heterostructure with a source and drain defined as quantum point contacts that spin-polarize the current. Results relate the effect of an applied gate voltage on both the Dresselhaus and Rashba contributions of the D'yakanov-Perel spin-flip scattering mechanism, the predominant spin scattering mechanism in AlGaAs/GaAs heterostructures at 300 K. Results are presented on the simulation of a spin-FET structure using quantum point contacts (QPCs) as a spin polarizer and spin detector.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"19 1","pages":"414-417"},"PeriodicalIF":0.0000,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Monte Carlo simulation of spin-polarized transport in GaAs nanostructures\",\"authors\":\"B. Tierney, S. Goodnick\",\"doi\":\"10.1109/NANO.2007.4601222\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An ensemble Monte Carlo program, in conjunction with an 8-band k.p self-consistent solver, is used to simulate the temporal and spatial evolution of the spin polarization of current through a GaAs/AlGaAs heterostructure with a source and drain defined as quantum point contacts that spin-polarize the current. Results relate the effect of an applied gate voltage on both the Dresselhaus and Rashba contributions of the D'yakanov-Perel spin-flip scattering mechanism, the predominant spin scattering mechanism in AlGaAs/GaAs heterostructures at 300 K. Results are presented on the simulation of a spin-FET structure using quantum point contacts (QPCs) as a spin polarizer and spin detector.\",\"PeriodicalId\":6415,\"journal\":{\"name\":\"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)\",\"volume\":\"19 1\",\"pages\":\"414-417\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NANO.2007.4601222\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANO.2007.4601222","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Monte Carlo simulation of spin-polarized transport in GaAs nanostructures
An ensemble Monte Carlo program, in conjunction with an 8-band k.p self-consistent solver, is used to simulate the temporal and spatial evolution of the spin polarization of current through a GaAs/AlGaAs heterostructure with a source and drain defined as quantum point contacts that spin-polarize the current. Results relate the effect of an applied gate voltage on both the Dresselhaus and Rashba contributions of the D'yakanov-Perel spin-flip scattering mechanism, the predominant spin scattering mechanism in AlGaAs/GaAs heterostructures at 300 K. Results are presented on the simulation of a spin-FET structure using quantum point contacts (QPCs) as a spin polarizer and spin detector.
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