Monte Carlo simulation of spin-polarized transport in GaAs nanostructures

Abstract

An ensemble Monte Carlo program, in conjunction with an 8-band k.p self-consistent solver, is used to simulate the temporal and spatial evolution of the spin polarization of current through a GaAs/AlGaAs heterostructure with a source and drain defined as quantum point contacts that spin-polarize the current. Results relate the effect of an applied gate voltage on both the Dresselhaus and Rashba contributions of the D'yakanov-Perel spin-flip scattering mechanism, the predominant spin scattering mechanism in AlGaAs/GaAs heterostructures at 300 K. Results are presented on the simulation of a spin-FET structure using quantum point contacts (QPCs) as a spin polarizer and spin detector.