{"title":"石墨烯纳米带的电子和输运特性","authors":"Z. Hou, M. Yee","doi":"10.1109/NANO.2007.4601252","DOIUrl":null,"url":null,"abstract":"We present the electronic structures and transport properties of hydrogen-saturated graphene ribbons and its dependence on its termination edge, ribbon width, and impurity. The band structures, transmission spectrum, and current-voltage (I-V) characteristics of graphene ribbons have been calculated by using first-principles electronic structure methods and non-equilibrium Green's functions technique. Our calculated results show that the graphene ribbons with zigzag shaped edges exhibit nonlinear behavior of I-V characteristics due to the overlapping of pi* and pi bands around Fermi level. As the width of zigzag chain of graphene ribbons increases, the overlapping of pi* and pi bands is enhanced and the voltage range for linear I-V response becomes narrower. The graphene ribbons with armchair shaped edges exhibit semiconducting properties and the band gap decreases with increasing ribbon width. The doping of B or N in graphene ribbons with armchair shaped edges slightly increases the current at lower bias voltage.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"197 1","pages":"554-557"},"PeriodicalIF":0.0000,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"Electronic and transport properties of graphene nanoribbons\",\"authors\":\"Z. Hou, M. Yee\",\"doi\":\"10.1109/NANO.2007.4601252\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present the electronic structures and transport properties of hydrogen-saturated graphene ribbons and its dependence on its termination edge, ribbon width, and impurity. The band structures, transmission spectrum, and current-voltage (I-V) characteristics of graphene ribbons have been calculated by using first-principles electronic structure methods and non-equilibrium Green's functions technique. Our calculated results show that the graphene ribbons with zigzag shaped edges exhibit nonlinear behavior of I-V characteristics due to the overlapping of pi* and pi bands around Fermi level. As the width of zigzag chain of graphene ribbons increases, the overlapping of pi* and pi bands is enhanced and the voltage range for linear I-V response becomes narrower. The graphene ribbons with armchair shaped edges exhibit semiconducting properties and the band gap decreases with increasing ribbon width. The doping of B or N in graphene ribbons with armchair shaped edges slightly increases the current at lower bias voltage.\",\"PeriodicalId\":6415,\"journal\":{\"name\":\"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)\",\"volume\":\"197 1\",\"pages\":\"554-557\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NANO.2007.4601252\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANO.2007.4601252","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electronic and transport properties of graphene nanoribbons
We present the electronic structures and transport properties of hydrogen-saturated graphene ribbons and its dependence on its termination edge, ribbon width, and impurity. The band structures, transmission spectrum, and current-voltage (I-V) characteristics of graphene ribbons have been calculated by using first-principles electronic structure methods and non-equilibrium Green's functions technique. Our calculated results show that the graphene ribbons with zigzag shaped edges exhibit nonlinear behavior of I-V characteristics due to the overlapping of pi* and pi bands around Fermi level. As the width of zigzag chain of graphene ribbons increases, the overlapping of pi* and pi bands is enhanced and the voltage range for linear I-V response becomes narrower. The graphene ribbons with armchair shaped edges exhibit semiconducting properties and the band gap decreases with increasing ribbon width. The doping of B or N in graphene ribbons with armchair shaped edges slightly increases the current at lower bias voltage.