石墨烯纳米带的电子和输运特性

Z. Hou, M. Yee
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引用次数: 13

摘要

我们介绍了氢饱和石墨烯带的电子结构和输运性质,以及它与终端边缘、带宽度和杂质的关系。利用第一性原理电子结构方法和非平衡格林函数技术计算了石墨烯带的能带结构、透射谱和电流-电压特性。计算结果表明,由于π *带和π带在费米能级附近重叠,具有之字形边缘的石墨烯带表现出非线性的I-V特性。随着石墨烯带之字形链宽度的增加,π *和π带的重叠增强,线性I-V响应的电压范围变窄。具有扶手椅形状边缘的石墨烯带具有半导体特性,带隙随带宽的增加而减小。在扶手椅形状的石墨烯带中掺杂B或N,可以在较低的偏置电压下略微增加电流。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electronic and transport properties of graphene nanoribbons
We present the electronic structures and transport properties of hydrogen-saturated graphene ribbons and its dependence on its termination edge, ribbon width, and impurity. The band structures, transmission spectrum, and current-voltage (I-V) characteristics of graphene ribbons have been calculated by using first-principles electronic structure methods and non-equilibrium Green's functions technique. Our calculated results show that the graphene ribbons with zigzag shaped edges exhibit nonlinear behavior of I-V characteristics due to the overlapping of pi* and pi bands around Fermi level. As the width of zigzag chain of graphene ribbons increases, the overlapping of pi* and pi bands is enhanced and the voltage range for linear I-V response becomes narrower. The graphene ribbons with armchair shaped edges exhibit semiconducting properties and the band gap decreases with increasing ribbon width. The doping of B or N in graphene ribbons with armchair shaped edges slightly increases the current at lower bias voltage.
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