Atomic-scale analysis of polydiacetylene nanowires by scanning tunneling microscopy

R. Giridharagopal, K. Kelly
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Abstract

Scanning tunneling microscopy (STM) has been used to study polydiacetylene nanowires, a candidate material for molecular electronic interconnects. STM analysis across different voltages shows that the substrate material contributes to hole doping in the nanowires. Changing the substrate material causes a substantial change in the apparent height of the nanowires in STM images, revealing a previously-overlooked dependence of the electronic structure upon the substrate electrode material. Polydiacetylene nanowires are also shown to desorb due to interactions with the STM tip. These nanowires can either fully desorb or be cut into shorter segments depending on the strength of the tip-nanowire interaction. In both desorption cases the surrounding diacetylene-derivative monolayer order is fully restored within 100 ms. Desorption is a critical factor in evaluating the stability of these nanowires.
用扫描隧道显微镜分析聚二乙炔纳米线的原子尺度
扫描隧道显微镜(STM)研究了聚二乙炔纳米线作为分子电子互连的候选材料。不同电压下的STM分析表明,衬底材料有助于纳米线中的空穴掺杂。改变衬底材料导致STM图像中纳米线的表观高度发生实质性变化,揭示了以前被忽视的电子结构对衬底电极材料的依赖性。由于与STM尖端的相互作用,聚二乙炔纳米线也显示出解吸。这些纳米线可以完全解吸,也可以被切成更短的片段,这取决于尖端-纳米线相互作用的强度。在两种解吸情况下,周围的二乙炔衍生物单层秩序在100 ms内完全恢复。解吸是评价纳米线稳定性的关键因素。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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