Spin-polarized thermionic emission at the interface of ferromagnetic metal and organic semiconductor

Abstract

We present a model to explain the spin-polarized injection from ferromagnetic metal into organic semiconductor. Thermionic emission mechanism is considered as the dominant transport mechanism at the interface at low bias. Boundary condition is determined from the relationship of the spin-dependent quasi-electrochemical potentials across the interface. The dependences of the current spin polarization on the control parameters, which include the Schottky barrier height at the interface, the spontaneous spin polarization in ferromagnetic metal, and the bias, are demonstrated.