2007 7th IEEE Conference on Nanotechnology (IEEE NANO)最新文献_第2页

Probabilistic error modeling for sequential logic 序列逻辑的概率误差建模

2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI: 10.1109/NANO.2007.4601266

K. Lingasubramanian, S. Bhanja

{"title":"Probabilistic error modeling for sequential logic","authors":"K. Lingasubramanian, S. Bhanja","doi":"10.1109/NANO.2007.4601266","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601266","url":null,"abstract":"Reliability is a crucial issue in nanoscale devices including both CMOS (beyond 22 nm) and non-CMOS. Devices in this regime tend to be more prone to errors due to thermal effects creating uncertainty in device characteristics. The transient nature of these errors commands the need for a probabilistic model that can represent the inherent circuit logic and can measure the errors. In sequential logic the error occurred in a particular time frame will be propagated to consecutive time frames thereby making the device more volatile. Any model that can represent a sequential logic should handle both spatial dependencies between nodes in a single time slice and temporal dependencies between nodes of different time slices. While modeling error in sequential logic the complexity arises in handling the temporal dependencies due to the feedback. Essentially, the feedback makes the system non-causal where outputs depend not only on inputs but also its own previous values. Depending on the circuit structure and the nature of feedback, various circuits would offer different degree of temporal dependence. In this work we propose a probabilistic error model for sequential logic that can measure the average output error probability that account for the spatio-temporal nature of the inherent dependencies using an temporally evolving causal Bayesian Networks also called Dynamic Bayesian Networks.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75364774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

The dependence of excitonic characteristics on the interface charge distribution with multiquantum barrier 多量子势垒界面电荷分布与激子特性的关系

2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI: 10.1109/NANO.2007.4601287

T. Nee, Jen-Cheng Wang, H. Shen, Ya-Fen Wu

{"title":"The dependence of excitonic characteristics on the interface charge distribution with multiquantum barrier","authors":"T. Nee, Jen-Cheng Wang, H. Shen, Ya-Fen Wu","doi":"10.1109/NANO.2007.4601287","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601287","url":null,"abstract":"Unique correlations between the excitonic characteristics and hetero-interface charge distribution of InGaN/GaN multiple quantum well light-emitting diodes (LEDs) were investigated over a broad range of temperatures. The dependence of non-unity ideality factors extracted from the current-voltage analysis on temperature determines the carrier-transport mechanisms in the heterodevices. Furthermore, the carrier tunneling processes via the extent of the charge population consequently cause anomaly more pseudo-temperature (To) and further characteristic energy (Eo), result in the abnormal deterioration of the luminescence intensities with small effective density of state. With respect to conventional GaN barrier devices, low-indium MQB devices inherently exhibit a small To over a variety of temperature ranges. The small To associated with a small characteristic energy and charge population of the multilayer interface states is obtained for each sample at the higher temperature regime. Accordingly, the high-indium MQB ensemble manifests a relatively higher characteristic energy than does the low-indium MQB ensemble. The characteristic energy Eo for the LEDs with InxGa1-xN/GaN multiquantum barriers were found to be decreased as increased In composition of InxGa1-xN/GaN MQBs. Correspondingly, the temperature-dependent electroluminescence observations suggest that the characteristic energy Eo anomaly caused the spectral intensity to deteriorate.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74391653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Spin-MTJ based Non-volatile Flip-Flop 基于Spin-MTJ的非易失性触发器

2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI: 10.1109/NANO.2007.4601218

Weisheng Zhao, E. Belhaire, C. Chappert

引用次数: 86

First principles and MD simulation study of the interaction of functionalized carbon nanotubes with water molecules 功能化碳纳米管与水分子相互作用的第一性原理及MD模拟研究

2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI: 10.1109/NANO.2007.4601382

C. Wongchoosuk, Sriprajak Krongsuk, T. Kerdcharoen

引用次数: 0

A novel design methodology for MEMS device 一种新的MEMS器件设计方法

2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI: 10.1109/NANO.2007.4601136

Xin Zhao, Lei Wang, Yiyong Tan, G. Sun, G. Lu

{"title":"A novel design methodology for MEMS device","authors":"Xin Zhao, Lei Wang, Yiyong Tan, G. Sun, G. Lu","doi":"10.1109/NANO.2007.4601136","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601136","url":null,"abstract":"Due to MEMS device needs highly accurate design, a novel design methodology for MEMS device is put forward in this paper. Firstly, top-down and bottom-up hybrid design process based on IP library is proposed. It facilitates and speeds up design cycle and reduces the expense of MEMS design by using IP components which have been successfully implemented. Secondly, virtual fabrication process is proposed. It is used to establish stable, accurate and robust 3D geometry of device according to the fabrication process. Voxel-based visualization technique is applied to virtual fabrication process to achieve better process simulation result. It could help designers achieve highly accurate fabrication process and result. Thirdly, virtual operation is proposed. It is used to visualize and simulate the mechanical operation of MEMS device. This module could exhibit 3D realistic animation in virtual reality (VR) environment. It could help designers achieve highly accurate physical operation characteristic of MEMS device. With the help of virtual fabrication process and virtual operation, intuitive image and realistic animation of MEMS device is exhibited at the design stage. An available prototyping MEMS CAD which implements both top-down and bottom-up design notion integrates with virtual fabrication process and virtual operation. A bimetallic thermally-actuated micropump is studied through the paper using this novel design methodology.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84993438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Growth, Structural and Optical Properties of III-V Nanowires for Optoelectronic Applications 光电应用III-V纳米线的生长、结构和光学性质

2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI: 10.1109/NANO.2007.4601321

H. Joyce, Q. Gao, Y. Kim, H. Tan, C. Jagadish

引用次数: 2

Nanowire electromechanical logic switch 纳米线机电逻辑开关

2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI: 10.1109/NANO.2007.4601157

Qiliang Li, C. Richter, H. Xiong, J. Suehle

引用次数: 1

Batch fabrication of nanotube transducers 纳米管换能器的批量制造

2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI: 10.1109/NANO.2007.4601294

A. Subramanian, T. Choi, Lixin Dong, D. Poulikakos, B. Nelson

引用次数: 2

Assembly of nano optics by an integrated probe-based system 基于探针的集成系统组装纳米光学器件

2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI: 10.1109/NANO.2007.4601246

L. Fok, Y.H. Liu, W.J. Li

引用次数: 2

Towards reliability improvement for nanoelectronic circuits using gate replication 利用栅极复制技术提高纳米电子电路的可靠性

2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI: 10.1109/NANO.2007.4601262

Chunhong Chen, F. Zhou

引用次数: 0