Spin-MTJ based Non-volatile Flip-Flop

Spin Transfer Torque (STT) writing approach based Magnetic Tunnel Junction (Spin-MTJ) is the excellent candidate to be used as Spintronics device in Magnetic RAM (MRAM) and Magnetic Logic. We present the first Non-volatile Flip-Flop based on this device for Field Programmable Gate Array (FPGA) and System On Chip (SOC) circuits, which can make these circuits fully non-volatile by storing permanently all the data processed in the Spin-MTJ memory cells. The non-volatility enables logic circuits to decrease significantly the start-up latency of these circuits from some micro seconds down to some hundred pico seconds. By using St microelectronics 90 nm CMOS technology and a behavior Spin-MTJ simulation Model in Verilog-A language, this non-volatile Flip-Flop has been demonstrated that it works not only in very high speed or low propagation delay, but also keeps low power dissipation and small cell surface.