光电应用III-V纳米线的生长、结构和光学性质

2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI:10.1109/NANO.2007.4601321

H. Joyce, Q. Gao, Y. Kim, H. Tan, C. Jagadish

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引用次数: 2

摘要

本文研究了MOCVD法制备III-V纳米线，并对其结构和光学性能进行了研究。制备了GaAs、InAs、InP、AlGaAs和InGaAs的二元和三元纳米线。我们讨论了在制造适合器件应用的高质量纳米线时所涉及的成核和生长问题。我们已经制作并表征了各种轴向和径向异质结构，包括GaAs/InGaAs超晶格，GaAs/AlGaAs核壳和核多壳纳米线。

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Growth, Structural and Optical Properties of III-V Nanowires for Optoelectronic Applications

We investigate the growth of III-V nanowires by MOCVD and the structural and optical properties of these nanowires. Binary and ternary nanowires of GaAs, InAs, InP, AlGaAs and InGaAs are achieved. We discuss the nucleation and growth issues involved in fabricating high quality nanowires suitable for device applications. We have fabricated and characterised a variety of axial and radial heterostructures including GaAs/InGaAs superlattices, and GaAs/AlGaAs core- shell and core-multishell nanowires.

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来源期刊

2007 7th IEEE Conference on Nanotechnology (IEEE NANO)

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