Schottky barrier engineering in carbon nanotube with various metal electrodes

Abstract

We investigated carbon nanotube field effect transistors (CNT FET) utilizing semiconducting single-walled carbon nanotubes (SWCNTs). Multiple devices, each of different metal source and drain contacts, were fabricated on long (~11 micron) SWCNT. Large contact resistances around four MOmega were observed at room temperature. Low temperature measurements yielded varying contact resistances for these same devices. Transport properties of the devices follow to the Schottky contact and Poole-Frenkel model with measured 25-41 meV barriers for the devices.