Physica Status Solidi-Rapid Research Letters最新文献_第5页

Long Range Charge Carrier Transport in Planar Polymer Bulk‐heterojunction Photovoltaic Cells 平面聚合物块状异质结光伏电池中的远距离电荷载流子传输

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-06-01 DOI: 10.1002/pssr.202400139

Faleh AlTal, Jun Gao

{"title":"Long Range Charge Carrier Transport in Planar Polymer Bulk‐heterojunction Photovoltaic Cells","authors":"Faleh AlTal, Jun Gao","doi":"10.1002/pssr.202400139","DOIUrl":"https://doi.org/10.1002/pssr.202400139","url":null,"abstract":"One‐dimensional scanning optical beam induced current (OBIC) measurements have been carried out on polymer bulk heterojunction (BHJ) photovoltaic cells with a planar, or lateral configuration. The planar P3HT:PCBM cells have parallel aluminum or gold electrodes that are 390 to 560 micrometers apart. When a focused laser beam is scanned across the electrode gap, photocurrent or photovoltage are recorded as a function of beam position along with the transmission of the excitation beam. Despite the large electrode gap size, cells with symmetric Al/Al electrodes exhibit significant photocurrent and photovoltage which are the highest at the electrode interfaces and null at the cell center. The OBIC in these large planar polymer BHJ cells is attributed to the metal/BHJ blend Schottky junction. The larger Schottky barrier of the Al/BHJ junction gives rise to a stronger OBIC response than the Au/BHJ junction. The photocurrent and photovoltage always have opposite signs and are anti‐symmetric about the cell center. In asymmetric Al/Au cells, the electrode work function difference contributes an additional built‐in field/potential drop and significantly modifies the photocurrent and photovoltage profiles. The depletion width of the Al/BHJ Schottky junction is 110‐120 µm, while the minority electron diffusion length is determined to be 43.8 µm.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"12 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141191838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optoelectronic transistor based on InSe/MoS2 heterostructure for multimodal nociceptor 基于 InSe/MoS2 异质结构的光电晶体管用于多模态痛觉感受器

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-05-30 DOI: 10.1002/pssr.202400111

Haobin Wang, Yifei Yang, Niannian Yu, Ziqi Chen, Junhui Yuan, Jiafu Wang

{"title":"Optoelectronic transistor based on InSe/MoS2 heterostructure for multimodal nociceptor","authors":"Haobin Wang, Yifei Yang, Niannian Yu, Ziqi Chen, Junhui Yuan, Jiafu Wang","doi":"10.1002/pssr.202400111","DOIUrl":"https://doi.org/10.1002/pssr.202400111","url":null,"abstract":"The artificial nociceptor is a device that simulates the biological nociception system, which has a wide range of applications in the fields of medicine, rehabilitation, and robotics. Multimodal nociceptors can respond to diverse stimuli, including visual, mechanical, and thermal, etc., and then convert them into neural signals for processing by the brain. Here, a back‐gate optoelectronic transistor based on 2‐dimensional InSe/MoS2 heterostructure is demonstrated, by employing energy band alignment of the heterojunction, the device exhibits high sensitivity (106) and high responsivity (330 AW‐1) to harmful UV irradiation, which can be exploited to emulate the key features of nociceptors, including “threshold”, “relaxation”, “no adaptation” and “sensitization”. Moreover, the device can be operated in a two‐terminal mode, memristive characteristics is obtained through applying source‐drain voltages. Then, artificial nociceptive behaviors respond to external electrical pulses have been successfully emulated. Finally, the modulation of nociceptive sensitivity can be achieved through the controlling gate bias, which fully demonstrates the potential of our device for the application of bio‐mimetic multimodal artificial nociceptors in future neuromorphic sensory system.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"84 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-05-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141191737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Oxygen Stoichiometry Engineering in P‐Type NiOx for High‐Performance NiO/Ga2O3 Heterostructure p‐n Diode 用于高性能氧化镍/氧化镓异质结构 p-n 二极管的 P 型氧化镍中氧的化学计量工程

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-05-29 DOI: 10.1002/pssr.202400109

Yuehua Hong, Xuefeng Zheng, Hao Zhang, Yunlong He, Tian Zhu, Kai Liu, Ang Li, Xiaohua Ma, Weidong Zhang, Jianfu Zhang, Yue Hao

{"title":"Oxygen Stoichiometry Engineering in P‐Type NiOx for High‐Performance NiO/Ga2O3 Heterostructure p‐n Diode","authors":"Yuehua Hong, Xuefeng Zheng, Hao Zhang, Yunlong He, Tian Zhu, Kai Liu, Ang Li, Xiaohua Ma, Weidong Zhang, Jianfu Zhang, Yue Hao","doi":"10.1002/pssr.202400109","DOIUrl":"https://doi.org/10.1002/pssr.202400109","url":null,"abstract":"P‐type NiOx was employed for the fabrication of NiO/Ga2O3 p‐n diode. Addressing the challenge of low hole mobility in NiOx, an extensive investigation into the impact of oxygen stoichiometry engineering in NiOx was conducted. The meticulous optimization of the O2/Ar ratio to 30% during the sputtering process resulted in significant improvements, notably achieving enhanced hole mobility of 1.61 cm2/V·s. It led to a low specific on‐resistance of 2.79 mΩ·cm2 and a high rectification ratio of ∽1011, underscoring the efficacy of recombination transport mechanism driven by enhanced hole mobility. Detailed band alignment analysis between NiOx and Ga2O3 revealed a small band offset, with a valence band offset of 2.47 eV and a conduction band offset of 1.70 eV. It suggests a tailored modification of band alignment through the engineering the oxygen stoichiometry in NiOx, facilitating enhanced recombination conduction. The device exhibits a suprior breakdown voltage (Vb) of 2780 V and a notable Baliga’s figure of merit (BFOM) of 2.77 GW/cm2, surpassing the SiC unipolar figure of merit. The insights gained from this work are expected to inform future designs and optimizations of high‐performance Ga2O3 electronic devices.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"33 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141191674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effective lifetime of non‐equilibrium carriers in perovskite‐inspired Cu2AgBiI6 包晶启发的 Cu2AgBiI6 中非平衡态载流子的有效寿命

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-05-28 DOI: 10.1002/pssr.202400134

Zenghua Cai, Chen-Min Dai, Chunlan Ma

{"title":"Effective lifetime of non‐equilibrium carriers in perovskite‐inspired Cu2AgBiI6","authors":"Zenghua Cai, Chen-Min Dai, Chunlan Ma","doi":"10.1002/pssr.202400134","DOIUrl":"https://doi.org/10.1002/pssr.202400134","url":null,"abstract":": Perovskite‐inspired materials are potential alternatives to lead halide perovskites, as they not only inherit the benign optoelectronic properties, but also diminish the stability and toxicity issues of lead halide perovskites. As a newly discovered perovskite‐inspired material, Cu2AgBiI6 has exhibited promising potential for photovoltaic applications. However, studies on its fundamental properties related to photovoltaic performance are scarce, particularly from a theoretical perspective. Here, we systematically investigate the effective lifetime of non‐equilibrium carriers (photo‐excited charge carriers), a critical property affecting the photovoltaic performance of Cu2AgBiI6, based on the non‐adiabatic molecular dynamics simulations. We find that under the standard solar spectrum illumination, the dominant recombination mechanism affecting the effective lifetime can be band‐to‐band nonradiative decay, band‐to‐band radiative decay, or Shockey‐Read‐Hall (SRH) defect‐assisted decay. The specific mechanism is highly dependent on the radiative recombination coefficient and the density of defect recombination levels. The effective lifetime can vary from 0.1 ms to 10 ns. When considering different illumination conditions (generation rates), Auger decay can also become the dominant recombination mechanism, with the effective lifetime varying from 0.1 s to 0.1 ns. These findings could be vital for further experimental researches aimed at enhancing the power conversion efficiency of Cu2AgBiI6‐based solar devices.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"82 6 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141191693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

In situ measurement techniques using diamond anvil cell at high pressure–temperature conditions: A review 在高压高温条件下使用金刚石砧槽进行原位测量的技术：综述

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-05-27 DOI: 10.1002/pssr.202300469

Bin Wei, Lin Lin, Jian Zhang, Zhiwen Zhan, Ziwei Cheng, Junru Jiang

引用次数: 0

Strategic review of organic–inorganic perovskite photodetectors 有机无机包晶光电探测器战略回顾

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-05-25 DOI: 10.1002/pssr.202400110

Neeraj Goel, Aditya Kushwaha, Monika Kwoka, Mahesh Kumar

{"title":"Strategic review of organic–inorganic perovskite photodetectors","authors":"Neeraj Goel, Aditya Kushwaha, Monika Kwoka, Mahesh Kumar","doi":"10.1002/pssr.202400110","DOIUrl":"https://doi.org/10.1002/pssr.202400110","url":null,"abstract":"Metal halide perovskites have aroused worldwide efforts for developing optoelectronic devices due to their unique optical properties and low‐cost simple fabrication process. In recent years, various perovskites based miniaturized optical devices have been actively investigated owing to their record‐breaking efficiency in different fields, including environmental monitoring, remote sensing, biomedical imaging, and optical communications. In this review, we staged a succinct and critical survey of recently discovered organic–inorganic perovskite photodetectors providing insights into their structural properties and key performance parameters. Firstly, we introduce key features of perovskites‐based photodetectors emphasizing their optoelectronic and electrical properties. Then, we discuss the polarization‐sensitive detection of metal halide perovskites by using polarization selective optical structures. The bandgap engineering for tailoring the properties of perovskite photodetectors by changing the chemical composition and material structures is also highlighted in this report. Finally, we present a perspective on future opportunities and current challenges for designing perovskite based optoelectronic devices.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"62 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141150537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Linear and Nonlinear Optical Properties of GeSe1‐xTex Chalcogenide Materials Promising for On‐Chip Low and Ultra‐low Loss Reconfigurable Photonics and Nonlinear Devices GeSe1-xTex 卤化物材料的线性和非线性光学特性有望用于片上低损耗和超低损耗可重构光子学和非线性设备

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-05-16 DOI: 10.1002/pssr.202400129

Anthony Albanese, Martina Tomelleri, Lara Karam, Jean-Baptiste Dory, Christophe Licitra, Benoît Charbonnier, Jean-Baptiste Jager, Aurélien Coillet, Benoît Cluzel, Pierre Noé

{"title":"Linear and Nonlinear Optical Properties of GeSe1‐xTex Chalcogenide Materials Promising for On‐Chip Low and Ultra‐low Loss Reconfigurable Photonics and Nonlinear Devices","authors":"Anthony Albanese, Martina Tomelleri, Lara Karam, Jean-Baptiste Dory, Christophe Licitra, Benoît Charbonnier, Jean-Baptiste Jager, Aurélien Coillet, Benoît Cluzel, Pierre Noé","doi":"10.1002/pssr.202400129","DOIUrl":"https://doi.org/10.1002/pssr.202400129","url":null,"abstract":"The highly promising linear and non‐linear optical properties of innovative thin films of GeSe1–x Te x chalcogenide materials in the amorphous as‐deposited state, and after crystallization, are revealed here. These innovative alloys bridge the gap between two families of materials: chalcogenide glasses (GeSe) and phase‐change materials (GeTe). Their unique optical properties make them attractive candidates for reconfigurable and non‐linear photonic applications in the infrared. In this context we show how, by varying the Te content of GeSe1–x Te x thin films, it is possible to tailor their linear and non‐linear optical properties to optimize them for a wide range of innovative applications.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"190 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141058896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Influence of Pressure on Phonon Properties of Indium Antimonide 压力对锑化铟声子特性的影响

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-05-11 DOI: 10.1002/pssr.202400093

Taras Palasyuk, Cezariusz Jastrzebski, Aleksander Khachapuridze, Elzbieta Litwin-Staszewska, Tadeusz Suski, Izabella Grzegory, Sylwester Porowski

{"title":"Influence of Pressure on Phonon Properties of Indium Antimonide","authors":"Taras Palasyuk, Cezariusz Jastrzebski, Aleksander Khachapuridze, Elzbieta Litwin-Staszewska, Tadeusz Suski, Izabella Grzegory, Sylwester Porowski","doi":"10.1002/pssr.202400093","DOIUrl":"https://doi.org/10.1002/pssr.202400093","url":null,"abstract":"Here experimental observation of the pressure‐induced softening of the zone‐edge transverse acoustical TA(X)ze phonon in the zincblende Indium Antimonide is for the first time reported. Experimental data allowed for determination of Grüneisen parameter for the TA(X)ze phonon mode. Our density functional theory calculations (DFT) performed within quasiharmonic approximation (QHA) at 0 K also revealed the softening of the TA(X)ze at high pressure, although the experimental value of its frequency shift is almost three times smaller than the theoretical one. In contrast, pressure dependences of optical phonons were well reproduced in our calculations. Similar calculations for GaSb and InP resulted in good agreement with available experimental data for optical and, as opposed to InSb, also for TA(X)ze phonons. The fact that the quasiharmonic theory works well for GaSb and InP may suggest that anharmonicity of acoustical phonons in these compounds is insignificant at room temperature. The possibility of enhanced anharmonicity of TA(X)ze phonon in InSb is discussed. The pressure of transition derived from experimentally determined shift of TA(X)ze frequency for InSb does not fit the recently proposed model of Weinstein working well for over twenty semiconductors, which also shows the specificity of InSb especially in comparison to other cubic III‐V semiconductors.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"136 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140937127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

4 inch Gallium Oxide Field‐Effect Transistors Array with High‐k Ta2O5 as Gate Dielectric by Physical Vapor Deposition 利用物理气相沉积技术将高 k 值 Ta2O5 用作栅极电介质的 4 英寸氧化镓场效应晶体管阵列

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-05-10 DOI: 10.1002/pssr.202400046

Zi Chun Liu, Jia Cheng Li, Hui Xia Yang, Han Yang, An Huang, De Dai, Yuan Huang, Yi Yun Zhang, Pui To Lai, Yuan Xiao Ma, Ye Liang Wang

{"title":"4 inch Gallium Oxide Field‐Effect Transistors Array with High‐k Ta2O5 as Gate Dielectric by Physical Vapor Deposition","authors":"Zi Chun Liu, Jia Cheng Li, Hui Xia Yang, Han Yang, An Huang, De Dai, Yuan Huang, Yi Yun Zhang, Pui To Lai, Yuan Xiao Ma, Ye Liang Wang","doi":"10.1002/pssr.202400046","DOIUrl":"https://doi.org/10.1002/pssr.202400046","url":null,"abstract":"Field‐effect transistors (FETs) with ultra‐wide bandgap semiconductor Ga2O3 have been fabricated by physical vapor deposition with advantages of low cost, wafer scale, and rapid production. The insulator‐like pristine Ga2O3 is converted to semiconductor by co‐sputtering Sn with post‐annealing, which demonstrates a 5.6 × 107 times higher on‐state current. Importantly, this Sn‐doped Ga2O3 sample shows a high breakdown voltage near 500 V. Furthermore, a 4 inch array of Sn‐doped Ga2O3 FETs with high‐k Ta2O5 gate dielectric has been fabricated on a silicon substrate, successfully showing a large on‐current density of 1.3 mA mm−1, a high ION/IOFF of 2.5 × 106, and a low threshold voltage of 3.9 V, which are extracted from the average 350 devices. This work paves a promising way for Ga2O3‐based nanoelectronics to serve medium‐high voltage with low cost, rapid, and wafer‐scale production.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"41 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140936859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

226 nm far‐ultraviolet‐C light emitting diodes with an emission power over 2 mW 发射功率超过 2 mW 的 226 nm 远紫外-C 发光二极管

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-05-10 DOI: 10.1002/pssr.202400092

Tim Kolbe, Hyun Kyong Cho, Sylvia Hagedorn, Jens Rass, Jan Ruschel, Sven Einfeldt, Markus Weyers

{"title":"226 nm far‐ultraviolet‐C light emitting diodes with an emission power over 2 mW","authors":"Tim Kolbe, Hyun Kyong Cho, Sylvia Hagedorn, Jens Rass, Jan Ruschel, Sven Einfeldt, Markus Weyers","doi":"10.1002/pssr.202400092","DOIUrl":"https://doi.org/10.1002/pssr.202400092","url":null,"abstract":"Far‐ultraviolet‐C (far‐UVC) light emitting diodes (LED) emitting at an emission wavelength of 226 nm with different n‐AlGaN contact layers, quantum well barriers, and quantum well numbers are compared regarding their emission power, operation voltage, and lifetime. Electroluminescence measurements show higher emission power but also an increased operation voltage with increasing Al mole fraction in the n‐AlGaN contact layer. Furthermore, it was found that both the mean emission power and the device lifetime decrease with increasing Al mole fraction (82 % to 89 %) of the quantum well barriers and therefore with increasing barrier height. Finally, 226 nm LEDs with 6 and 9 quantum wells were compared. It was observed that the sample with 9 quantum wells shows an around 30 % lower mean emission power but on the other hand the L70 lifetime of these LEDs is higher by a factor of around five. Based on these optimizations, 226 nm LEDs with a maximum external quantum efficiency of 0.28 % (wall plug efficiency of 0.18 %) as well as an emission power of 2.1 mW and an operation voltage of 9.6 V at 200 mA were realized.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"116 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140937260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0