Physica Status Solidi-Rapid Research Letters最新文献

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Epitaxial tantalum‐doped β‐Ga2O3 thin films grown on MgO (001) substrate by pulsed laser deposition 利用脉冲激光沉积法在氧化镁(001)基底上生长的掺杂钽的外延β-Ga2O3 薄膜
IF 2.8 4区 物理与天体物理
Physica Status Solidi-Rapid Research Letters Pub Date : 2024-03-02 DOI: 10.1002/pssr.202400023
Haobo Lin, Ningtao Liu, Wei Wang, Xiaoli Zhang, Dongyang Han, Wenrui Zhang, Jichun Ye
{"title":"Epitaxial tantalum‐doped β‐Ga2O3 thin films grown on MgO (001) substrate by pulsed laser deposition","authors":"Haobo Lin, Ningtao Liu, Wei Wang, Xiaoli Zhang, Dongyang Han, Wenrui Zhang, Jichun Ye","doi":"10.1002/pssr.202400023","DOIUrl":"https://doi.org/10.1002/pssr.202400023","url":null,"abstract":"Epitaxial thin films of tantalum‐doped β‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> (Ta‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>) were grown on MgO (001) substrates to study the effect of Ta doping on the electrical properties of β‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> films. X‐ray diffraction measurements show that the films with different Ta doping concentrations are (00<jats:italic>l</jats:italic>)‐oriented single‐crystalline β‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> without impurity phases. The incorporation of the Ta element modifies the electrical properties of Ta‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> films significantly. At a very low doping ratio of 0.05 mol%, the Ta‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> film showed a minimum resistivity of 2.32 Ω·cm and a carrier concentration of 2.48×10<jats:sup>17</jats:sup> cm<jats:sup>‐3</jats:sup>. The corresponding activation energy of Ta element in the film was 16.8 meV, suggesting that the Ta element is a promising shallow donor dopant. The XPS analysis confirms that the Fermi level of the Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> films shifts towards the conduction band minimum after the introduction of Ta ions. These results indicate that the transition metal element Ta could be an effective n‐type dopant for modulating the carrier transport behavior of β‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> films.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"18 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140019557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Relative intensity noise in a two-section distributed Bragg reflector tapered laser 双截面分布式布拉格反射器锥形激光器中的相对强度噪声
IF 2.8 4区 物理与天体物理
Physica Status Solidi-Rapid Research Letters Pub Date : 2024-02-29 DOI: 10.1002/pssr.202400018
Pawel Adamiec, Jose Manuel Garcia Tijero, Ignacio Esquivias, Hans Wenzel, Bernd Sumpf
{"title":"Relative intensity noise in a two-section distributed Bragg reflector tapered laser","authors":"Pawel Adamiec, Jose Manuel Garcia Tijero, Ignacio Esquivias, Hans Wenzel, Bernd Sumpf","doi":"10.1002/pssr.202400018","DOIUrl":"https://doi.org/10.1002/pssr.202400018","url":null,"abstract":"The relative intensity noise (RIN) in a two-section distributed Bragg reflector (DBR) tapered laser emitting around 1060 nm is being studied experimentally. By analyzing the RIN spectra, a resonance frequency and damping is obtained. Here, the dependence of the resonance frequency and the maximum RIN at the resonance frequency is studied as functions of the ridge waveguide (RW) and tapered section currents independently. The low frequency RIN is approximately -162 dB Hz<sup>-1</sup>, and the RIN peak at currents providing high output power is as low as -154 dB Hz<sup>-1</sup>. The observed nonlinearity of the squared resonance frequency with the RW section current is attributed to carrier saturation. The measured high values of the resonance frequency, exceeding 2.5 GHz for RW currents higher than 100 mA at a tapered current of 3 A, indicate gain lever enhancement.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"35 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-02-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140005665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
ADVANCEMENTS IN UNCOOLED BOLOMETER TECHNOLOGY: SHORT‐WAVE INFRARED DETECTION VIA CuFeSe2$left(text{CuFeSe}right)_{2}$ NANOCRYSTAL COLLOIDAL THIN‐FILMS 非制冷型极光技术的进展:通过 CuFeSe2$left(text{CuFeSe}right)_{2}$ 纳米晶体胶体薄膜实现短波红外探测
IF 2.8 4区 物理与天体物理
Physica Status Solidi-Rapid Research Letters Pub Date : 2024-02-28 DOI: 10.1002/pssr.202300440
Ashutosh Vishwakarma, Chinmay Shailendra Gharpure, Anumol Sugathan, Anshu Pandey, Sushobhan Avasthi
{"title":"ADVANCEMENTS IN UNCOOLED BOLOMETER TECHNOLOGY: SHORT‐WAVE INFRARED DETECTION VIA CuFeSe2$left(text{CuFeSe}right)_{2}$ NANOCRYSTAL COLLOIDAL THIN‐FILMS","authors":"Ashutosh Vishwakarma, Chinmay Shailendra Gharpure, Anumol Sugathan, Anshu Pandey, Sushobhan Avasthi","doi":"10.1002/pssr.202300440","DOIUrl":"https://doi.org/10.1002/pssr.202300440","url":null,"abstract":"Microbolometers have emerged as a cost‐effective alternative to cooled infrared photon detectors, albeit with certain trade‐offs in terms of responsivity (), detectivity (), and response time (). The research in this field has been driven by the potential applications in night vision devices, military surveillance, and autonomous vehicles, leading to a growing interest in exploring new materials to bridge the performance gap between cooled photon detectors and uncooled bolometers. This study focuses on the optoelectronic and bolometric characteristics of nanocrystals (NCs) in a colloidal solution. These NCs exhibit a significant change in resistivity (<jats:italic>ρ</jats:italic>) when subjected to temperature variations ranging from 170K to 400K. Specifically, the Temperature Coefficient of Resistance (TCR), <jats:italic>α</jats:italic>, is 1.9% per Kelvin for a room temperature resistivity of 505 <jats:italic>Ω</jats:italic> cm. Furthermore, the responsivity of NCs is reported to be 0.101 A/W, and the Hall mobility of the colloidal solution is determined as . Finally, a comprehensive comparison is conducted between the performance metrics of established bolometer materials, such as VOx and a‐Si, and those of colloidal NCs. Based on the results, colloidal NCs are a promising option for future bolometer technology.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"10 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140005530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Systematic investigation on the surfactant-assisted liquid phase exfoliation of MoS2 and WS2 in water for sustainable 2D material inks 关于表面活性剂辅助液相剥离水中的 MoS2 和 WS2 以实现可持续二维材料油墨的系统研究
IF 2.8 4区 物理与天体物理
Physica Status Solidi-Rapid Research Letters Pub Date : 2024-02-25 DOI: 10.1002/pssr.202400039
Micaela Pozzati, Felix Boll, Matteo Crisci, Sara Domenici, Bernd Smarsly, Teresa Gatti, Mengjiao Wang
{"title":"Systematic investigation on the surfactant-assisted liquid phase exfoliation of MoS2 and WS2 in water for sustainable 2D material inks","authors":"Micaela Pozzati, Felix Boll, Matteo Crisci, Sara Domenici, Bernd Smarsly, Teresa Gatti, Mengjiao Wang","doi":"10.1002/pssr.202400039","DOIUrl":"https://doi.org/10.1002/pssr.202400039","url":null,"abstract":"MoS<sub>2</sub> and WS<sub>2</sub> have gathered significant attention due to their interesting and tunable properties and their wide range of applications. Liquid phase exfoliation (LPE) is a common and facile method to prepare 2D MoS<sub>2</sub> and WS<sub>2</sub>. Currently, the principally employed solvents for LPE of MoS<sub>2</sub> and WS<sub>2</sub> are expensive, toxic and have high boiling points. These drawbacks encourage to find more sustainable alternatives to the liquid medium used for the preparation of 2D material inks. Water would be the best option, but surfactants are necessary for LPE in water, since MoS<sub>2</sub> and WS<sub>2</sub> are hydrophobic. Organic molecules with amphoteric character such as sodium dodecyl sulfate (SDS), sodium dodecylbenzene sulfonate (SDBS) and sodium hexyl sulfonate (SHS) are selected as suitable candidates for the role of surfactant. However, the study of these surfactants used in LPE is barely systematically reported. In this work, we present a detailed investigation on the impact of these surfactants on the LPE of MoS<sub>2</sub> and WS<sub>2</sub>, which are representatives of TMDs. By characterizing and qualifying the products from average number of layers, we find that all the surfactants work efficiently to exfoliate MoS<sub>2</sub> and WS<sub>2</sub> into few layers, and SHS stabilizes the 2D layers better than the other two surfactants. However, in terms of yield and relative surfactant concentration, we don’t identify a real trade-off between maximized quantity of exfoliated materials and minimized surfactant concentration, which prompts to select the colloidal ink based on the specific further needs for processing.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"1 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139969556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modified electronic structure of amorphous Mn‐Si‐Te for OTS application: Improved thermal stability by the formation of Mn‐Te bonding 用于 OTS 的非晶态锰-硅-碲的改良电子结构:通过形成 Mn-Te 键提高热稳定性
IF 2.8 4区 物理与天体物理
Physica Status Solidi-Rapid Research Letters Pub Date : 2024-02-23 DOI: 10.1002/pssr.202300474
Kentaro Saito, Shogo Hatayama, Yuta Saito
{"title":"Modified electronic structure of amorphous Mn‐Si‐Te for OTS application: Improved thermal stability by the formation of Mn‐Te bonding","authors":"Kentaro Saito, Shogo Hatayama, Yuta Saito","doi":"10.1002/pssr.202300474","DOIUrl":"https://doi.org/10.1002/pssr.202300474","url":null,"abstract":"A critical element within the 3D Xpoint architecture is the Ovonic threshold switch (OTS) material, which serves a crucial role as a selector. The development of novel OTS materials devoid of hazardous elements such as As and Se is imperative for mitigating environmental impact. The Si‐Te binary telluride is a representative As/Se‐free OTS material, demonstrating stable switching. However, its thermal stability is insufficient for enduring annealing processes in semiconductor manufacturing. To address this challenge, this study proposes the incorporation of Mn into the Si‐Te alloy. While the introduction of transition metals into chalcogenide glass typically reduces the electrical resistivity, potentially compromising the ON/OFF ratio, the off current for the device containing 26 at.% Mn is observed to be lower than that for the undoped Si‐Te device. Furthermore, the thermal stability of the Mn‐Si‐Te film surpasses that of its pristine counterpart. X‐ray photoelectron spectroscopy and density functional theory simulations provide evidence of Mn‐Te bonding formation in the Mn‐Si‐Te amorphous alloy, thus suggesting the role of Mn‐Te bonding in enhancing thermal stability. These findings provide a promising avenue for the advancement of novel OTS materials.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"77 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139954704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Colloidal doped semiconductor nanocrystals embedded in one‐dimensional photonic crystals for ultrafast photonics 嵌入一维光子晶体的胶体掺杂半导体纳米晶体用于超快光子学
IF 2.8 4区 物理与天体物理
Physica Status Solidi-Rapid Research Letters Pub Date : 2024-02-23 DOI: 10.1002/pssr.202300476
Ilka Kriegel, Francesco Scotognella
{"title":"Colloidal doped semiconductor nanocrystals embedded in one‐dimensional photonic crystals for ultrafast photonics","authors":"Ilka Kriegel, Francesco Scotognella","doi":"10.1002/pssr.202300476","DOIUrl":"https://doi.org/10.1002/pssr.202300476","url":null,"abstract":"The optical properties of strongly doped semiconductor nanocrystals depend strongly on the carrier density of the nanocrystals. These characteristics can be exploited for the design of innovative optical devices based on ultrafast switching potentially in the THz modulation bandwidth. In this study, the optical response of one‐dimensional photonic crystals incorporating colloidal nanoparticles of a highly doped semiconductor such as indium tin oxide was investigated, taking into consideration the angular dependence of the photonic band gap and the position dependence of the photonic band gap on the light‐induced tunability of the indium tin oxide doping.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"35 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139954635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Polycrystalline GeSn films grown by HWCVD on SiO2/Si(001) substrates 通过 HWCVD 在 SiO2/Si(001)衬底上生长的多晶 GeSn 薄膜
IF 2.8 4区 物理与天体物理
Physica Status Solidi-Rapid Research Letters Pub Date : 2024-02-22 DOI: 10.1002/pssr.202300484
V.G. Shengurov, Yu.N. Buzynin, V. Yu. Chalkov, A.V. Nezhdanov, A.V. Kudrin, P.A. Yunin
{"title":"Polycrystalline GeSn films grown by HWCVD on SiO2/Si(001) substrates","authors":"V.G. Shengurov, Yu.N. Buzynin, V. Yu. Chalkov, A.V. Nezhdanov, A.V. Kudrin, P.A. Yunin","doi":"10.1002/pssr.202300484","DOIUrl":"https://doi.org/10.1002/pssr.202300484","url":null,"abstract":"The conditions for the growth of polycrystalline GeSn films on SiO<sub>2</sub>/Si(001) substrates by HWCVD have been determined for the first time. The effect of the introduction of Sn into the Ge lattice on the morphology, structure and transport properties of films has been studied. GeSn films obtained at 300°C have a uniform surface with a roughness of less than 1.0 nm. It has been shown that the introduction of 5% Sn allows, without the use of recrystallization annealing, to significantly increase the hole mobility of polycrystalline GeSn films from 20 to 60 cm<sup>2</sup>/V×s. despite the small grain size of 35 nm. Such films are of great interest for creating thin film transistors for active matrices liquid crystal displays.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"242 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139955209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhanced Thermoelectric Performance of Cu2Se Alloys by Simultaneous Engineering of Thermal and Electrical Transport Properties Through S and Te co-doping 通过共掺杂 S 和 Te 同时改善 Cu2Se 合金的热电和电传输性能
IF 2.8 4区 物理与天体物理
Physica Status Solidi-Rapid Research Letters Pub Date : 2024-02-22 DOI: 10.1002/pssr.202400016
Mahwish Khan, Hongchao Wang, Chunlei Wang
{"title":"Enhanced Thermoelectric Performance of Cu2Se Alloys by Simultaneous Engineering of Thermal and Electrical Transport Properties Through S and Te co-doping","authors":"Mahwish Khan, Hongchao Wang, Chunlei Wang","doi":"10.1002/pssr.202400016","DOIUrl":"https://doi.org/10.1002/pssr.202400016","url":null,"abstract":"Cu<sub>2</sub>Se based binary compounds has recently fetched the attention of researchers due to their remarkable electrical and extremely low thermal properties. Besides, Cu<sub>2</sub>Se based quaternary chalcogenides were expected to present exceptional thermoelectric performance. Cu<sub>2</sub>Se<sub>1-x-y</sub>S<sub>x</sub>Te<sub>y</sub> like compounds are synthesized via microwave assisted hydrothermal method and their respective thermal and electrical transport properties are studied in this research work. The phase purity and homogeneity were examined by X-Ray diffraction and EDS analysis. The introduction of S and Te elements into Cu<sub>2</sub>Se matrix enhance Seebeck coefficient resulting in improved electrical performance illustrating a maximum power factor of 989.4 <i>μ</i>WK<sup>-2</sup>m<sup>-1</sup> at 673 K. Furthermore, S, Te co-doped samples exhibit reduced total thermal conductivity values with lowest value of 0.808 WK<sup>-1</sup>m<sup>-1</sup> for Cu<sub>2</sub>Se<sub>0.96</sub>S<sub>0.02</sub>Te<sub>0.02</sub> sample in comparison to 1.18 WK<sup>-1</sup>m<sup>-1</sup> for the pristine sample. The simultaneous improvement in electrical and thermal properties results in enhanced figure of merit of 0.82 for Cu<sub>2</sub>Se<sub>0.96</sub>S<sub>0.02</sub>Te<sub>0.02</sub> sample at 673 K.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"242 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139956940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Theoretical and experimental study of high electromechanical coupling SAW resonators based on a-plane ( 11 2 ¯ 0 ) Al0.56Sc0.44N films 基于 a-plane ( 11 2 ¯ 0 ) Al0.56Sc0.44N 薄膜的高机电耦合声表面波谐振器的理论与实验研究
IF 2.8 4区 物理与天体物理
Physica Status Solidi-Rapid Research Letters Pub Date : 2024-02-21 DOI: 10.1002/pssr.202300443
Weilun Xie, Weipeng Xuan, Danyang Fu, Yingqi Jiang, Qikun Wang, Xingli He, Liang Wu, Jinkai Chen, Shurong Dong, Hao Jin, Jikui Luo
{"title":"Theoretical and experimental study of high electromechanical coupling SAW resonators based on a-plane ( 11 2 ¯ 0 ) Al0.56Sc0.44N films","authors":"Weilun Xie, Weipeng Xuan, Danyang Fu, Yingqi Jiang, Qikun Wang, Xingli He, Liang Wu, Jinkai Chen, Shurong Dong, Hao Jin, Jikui Luo","doi":"10.1002/pssr.202300443","DOIUrl":"https://doi.org/10.1002/pssr.202300443","url":null,"abstract":"In this work, a high-quality Al&lt;sub&gt;0.56&lt;/sub&gt;Sc&lt;sub&gt;0.44&lt;/sub&gt;N&lt;mjx-container aria-label=\"left parenthesis 11 ModifyingAbove 2 With bar 0 right parenthesis\" ctxtmenu_counter=\"1\" ctxtmenu_oldtabindex=\"1\" jax=\"CHTML\" role=\"application\" sre-explorer- style=\"font-size: 103%; position: relative;\" tabindex=\"0\"&gt;&lt;mjx-math aria-hidden=\"true\"&gt;&lt;mjx-semantics&gt;&lt;mjx-mrow&gt;&lt;mjx-mrow data-semantic-children=\"8\" data-semantic-content=\"0,9\" data-semantic- data-semantic-role=\"leftright\" data-semantic-speech=\"left parenthesis 11 ModifyingAbove 2 With bar 0 right parenthesis\" data-semantic-type=\"fenced\"&gt;&lt;mjx-mo data-semantic- data-semantic-operator=\"fenced\" data-semantic-parent=\"10\" data-semantic-role=\"open\" data-semantic-type=\"fence\" style=\"margin-left: 0.056em; margin-right: 0.056em;\"&gt;&lt;mjx-c&gt;&lt;/mjx-c&gt;&lt;/mjx-mo&gt;&lt;mjx-mrow data-semantic-annotation=\"clearspeak:unit\" data-semantic-children=\"1,4,5\" data-semantic-content=\"6,7\" data-semantic- data-semantic-parent=\"10\" data-semantic-role=\"implicit\" data-semantic-type=\"infixop\"&gt;&lt;mjx-mn data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"normal\" data-semantic- data-semantic-parent=\"8\" data-semantic-role=\"integer\" data-semantic-type=\"number\"&gt;&lt;mjx-c&gt;&lt;/mjx-c&gt;&lt;mjx-c&gt;&lt;/mjx-c&gt;&lt;/mjx-mn&gt;&lt;mjx-mo data-semantic-added=\"true\" data-semantic- data-semantic-operator=\"infixop,⁢\" data-semantic-parent=\"8\" data-semantic-role=\"multiplication\" data-semantic-type=\"operator\" style=\"margin-left: 0.056em; margin-right: 0.056em;\"&gt;&lt;mjx-c&gt;&lt;/mjx-c&gt;&lt;/mjx-mo&gt;&lt;mjx-mover data-semantic-children=\"2,3\" data-semantic- data-semantic-parent=\"8\" data-semantic-role=\"integer\" data-semantic-type=\"overscore\"&gt;&lt;mjx-over style=\"padding-bottom: 0.105em; padding-left: 0.25em; margin-bottom: -0.544em;\"&gt;&lt;mjx-mo data-semantic- data-semantic-parent=\"4\" data-semantic-role=\"overaccent\" data-semantic-type=\"operator\" style=\"width: 0px; margin-left: -0.25em;\"&gt;&lt;mjx-c&gt;&lt;/mjx-c&gt;&lt;/mjx-mo&gt;&lt;/mjx-over&gt;&lt;mjx-base&gt;&lt;mjx-mn data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"normal\" data-semantic- data-semantic-parent=\"4\" data-semantic-role=\"integer\" data-semantic-type=\"number\"&gt;&lt;mjx-c&gt;&lt;/mjx-c&gt;&lt;/mjx-mn&gt;&lt;/mjx-base&gt;&lt;/mjx-mover&gt;&lt;mjx-mo data-semantic-added=\"true\" data-semantic- data-semantic-operator=\"infixop,⁢\" data-semantic-parent=\"8\" data-semantic-role=\"multiplication\" data-semantic-type=\"operator\" style=\"margin-left: 0.056em; margin-right: 0.056em;\"&gt;&lt;mjx-c&gt;&lt;/mjx-c&gt;&lt;/mjx-mo&gt;&lt;mjx-mn data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"normal\" data-semantic- data-semantic-parent=\"8\" data-semantic-role=\"integer\" data-semantic-type=\"number\"&gt;&lt;mjx-c&gt;&lt;/mjx-c&gt;&lt;/mjx-mn&gt;&lt;/mjx-mrow&gt;&lt;mjx-mo data-semantic- data-semantic-operator=\"fenced\" data-semantic-parent=\"10\" data-semantic-role=\"close\" data-semantic-type=\"fence\" style=\"margin-left: 0.056em; margin-right: 0.056em;\"&gt;&lt;mjx-c&gt;&lt;/mjx-c&gt;&lt;/mjx-mo&gt;&lt;/mjx-mrow&gt;&lt;/mjx-mrow&gt;&lt;/mjx-semantics&gt;&lt;/mjx-math&gt;&lt;mjx-assistive-mml aria-hidden=\"true\" display=\"inline\" unselectable=\"on\"&gt;&lt;math altimg=\"/cms/asset/b3afac2c-d86c-4a82-8e01-950afeedddd7/pssr","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"14 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139954628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Transition metal impurities as shallow donors in β−Ga2O3 过渡金属杂质作为 β-Ga2O3 中的浅供体
IF 2.8 4区 物理与天体物理
Physica Status Solidi-Rapid Research Letters Pub Date : 2024-02-21 DOI: 10.1002/pssr.202300500
Siavash Karbasizadeh, Sai Mu, Mark E. Turiansky, Chris G. Van de Walle
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