通过 HWCVD 在 SiO2/Si(001)衬底上生长的多晶 GeSn 薄膜

IF 2.5 4区物理与天体物理 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-02-22 DOI:10.1002/pssr.202300484

V.G. Shengurov, Yu.N. Buzynin, V. Yu. Chalkov, A.V. Nezhdanov, A.V. Kudrin, P.A. Yunin

{"title":"通过 HWCVD 在 SiO2/Si(001)衬底上生长的多晶 GeSn 薄膜","authors":"V.G. Shengurov, Yu.N. Buzynin, V. Yu. Chalkov, A.V. Nezhdanov, A.V. Kudrin, P.A. Yunin","doi":"10.1002/pssr.202300484","DOIUrl":null,"url":null,"abstract":"The conditions for the growth of polycrystalline GeSn films on SiO2/Si(001) substrates by HWCVD have been determined for the first time. The effect of the introduction of Sn into the Ge lattice on the morphology, structure and transport properties of films has been studied. GeSn films obtained at 300°C have a uniform surface with a roughness of less than 1.0 nm. It has been shown that the introduction of 5% Sn allows, without the use of recrystallization annealing, to significantly increase the hole mobility of polycrystalline GeSn films from 20 to 60 cm2/V×s. despite the small grain size of 35 nm. Such films are of great interest for creating thin film transistors for active matrices liquid crystal displays.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"242 1","pages":""},"PeriodicalIF":2.5000,"publicationDate":"2024-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Polycrystalline GeSn films grown by HWCVD on SiO2/Si(001) substrates\",\"authors\":\"V.G. Shengurov, Yu.N. Buzynin, V. Yu. Chalkov, A.V. Nezhdanov, A.V. Kudrin, P.A. Yunin\",\"doi\":\"10.1002/pssr.202300484\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The conditions for the growth of polycrystalline GeSn films on SiO2/Si(001) substrates by HWCVD have been determined for the first time. The effect of the introduction of Sn into the Ge lattice on the morphology, structure and transport properties of films has been studied. GeSn films obtained at 300°C have a uniform surface with a roughness of less than 1.0 nm. It has been shown that the introduction of 5% Sn allows, without the use of recrystallization annealing, to significantly increase the hole mobility of polycrystalline GeSn films from 20 to 60 cm2/V×s. despite the small grain size of 35 nm. Such films are of great interest for creating thin film transistors for active matrices liquid crystal displays.\",\"PeriodicalId\":54619,\"journal\":{\"name\":\"Physica Status Solidi-Rapid Research Letters\",\"volume\":\"242 1\",\"pages\":\"\"},\"PeriodicalIF\":2.5000,\"publicationDate\":\"2024-02-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physica Status Solidi-Rapid Research Letters\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1002/pssr.202300484\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica Status Solidi-Rapid Research Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1002/pssr.202300484","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

摘要

首次确定了在 SiO2/Si(001)衬底上通过 HWCVD 生长多晶 GeSn 薄膜的条件。研究了在 Ge 晶格中引入 Sn 对薄膜形态、结构和传输特性的影响。在 300°C 温度下获得的 GeSn 薄膜表面均匀，粗糙度小于 1.0 nm。研究表明，尽管晶粒尺寸只有 35 nm，但在不使用重结晶退火的情况下，5% 锡的引入可使多晶 GeSn 薄膜的空穴迁移率从 20 cm2/V×s 显著提高到 60 cm2/V×s。这种薄膜对于制造用于有源矩阵液晶显示器的薄膜晶体管具有重大意义。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Polycrystalline GeSn films grown by HWCVD on SiO2/Si(001) substrates

The conditions for the growth of polycrystalline GeSn films on SiO₂/Si(001) substrates by HWCVD have been determined for the first time. The effect of the introduction of Sn into the Ge lattice on the morphology, structure and transport properties of films has been studied. GeSn films obtained at 300°C have a uniform surface with a roughness of less than 1.0 nm. It has been shown that the introduction of 5% Sn allows, without the use of recrystallization annealing, to significantly increase the hole mobility of polycrystalline GeSn films from 20 to 60 cm²/V×s. despite the small grain size of 35 nm. Such films are of great interest for creating thin film transistors for active matrices liquid crystal displays.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Physica Status Solidi-Rapid Research Letters 物理-材料科学：综合

CiteScore

5.20

自引率

3.60%

发文量

208

审稿时长

1.4 months

期刊介绍： Physica status solidi (RRL) - Rapid Research Letters was designed to offer extremely fast publication times and is currently one of the fastest double peer-reviewed publication media in solid state and materials physics. Average times are 11 days from submission to first editorial decision, and 12 days from acceptance to online publication. It communicates important findings with a high degree of novelty and need for express publication, as well as other results of immediate interest to the solid-state physics and materials science community. Published Letters require approval by at least two independent reviewers. The journal covers topics such as preparation, structure and simulation of advanced materials, theoretical and experimental investigations of the atomistic and electronic structure, optical, magnetic, superconducting, ferroelectric and other properties of solids, nanostructures and low-dimensional systems as well as device applications. Rapid Research Letters particularly invites papers from interdisciplinary and emerging new areas of research.