Tim Kolbe, Hyun Kyong Cho, Sylvia Hagedorn, Jens Rass, Jan Ruschel, Sven Einfeldt, Markus Weyers
{"title":"226 nm far‐ultraviolet‐C light emitting diodes with an emission power over 2 mW","authors":"Tim Kolbe, Hyun Kyong Cho, Sylvia Hagedorn, Jens Rass, Jan Ruschel, Sven Einfeldt, Markus Weyers","doi":"10.1002/pssr.202400092","DOIUrl":null,"url":null,"abstract":"Far‐ultraviolet‐C (far‐UVC) light emitting diodes (LED) emitting at an emission wavelength of 226 nm with different n‐AlGaN contact layers, quantum well barriers, and quantum well numbers are compared regarding their emission power, operation voltage, and lifetime. Electroluminescence measurements show higher emission power but also an increased operation voltage with increasing Al mole fraction in the n‐AlGaN contact layer. Furthermore, it was found that both the mean emission power and the device lifetime decrease with increasing Al mole fraction (82 % to 89 %) of the quantum well barriers and therefore with increasing barrier height. Finally, 226 nm LEDs with 6 and 9 quantum wells were compared. It was observed that the sample with 9 quantum wells shows an around 30 % lower mean emission power but on the other hand the L70 lifetime of these LEDs is higher by a factor of around five. Based on these optimizations, 226 nm LEDs with a maximum external quantum efficiency of 0.28 % (wall plug efficiency of 0.18 %) as well as an emission power of 2.1 mW and an operation voltage of 9.6 V at 200 mA were realized.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"116 1","pages":""},"PeriodicalIF":2.5000,"publicationDate":"2024-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica Status Solidi-Rapid Research Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1002/pssr.202400092","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Far‐ultraviolet‐C (far‐UVC) light emitting diodes (LED) emitting at an emission wavelength of 226 nm with different n‐AlGaN contact layers, quantum well barriers, and quantum well numbers are compared regarding their emission power, operation voltage, and lifetime. Electroluminescence measurements show higher emission power but also an increased operation voltage with increasing Al mole fraction in the n‐AlGaN contact layer. Furthermore, it was found that both the mean emission power and the device lifetime decrease with increasing Al mole fraction (82 % to 89 %) of the quantum well barriers and therefore with increasing barrier height. Finally, 226 nm LEDs with 6 and 9 quantum wells were compared. It was observed that the sample with 9 quantum wells shows an around 30 % lower mean emission power but on the other hand the L70 lifetime of these LEDs is higher by a factor of around five. Based on these optimizations, 226 nm LEDs with a maximum external quantum efficiency of 0.28 % (wall plug efficiency of 0.18 %) as well as an emission power of 2.1 mW and an operation voltage of 9.6 V at 200 mA were realized.This article is protected by copyright. All rights reserved.
期刊介绍:
Physica status solidi (RRL) - Rapid Research Letters was designed to offer extremely fast publication times and is currently one of the fastest double peer-reviewed publication media in solid state and materials physics. Average times are 11 days from submission to first editorial decision, and 12 days from acceptance to online publication. It communicates important findings with a high degree of novelty and need for express publication, as well as other results of immediate interest to the solid-state physics and materials science community. Published Letters require approval by at least two independent reviewers.
The journal covers topics such as preparation, structure and simulation of advanced materials, theoretical and experimental investigations of the atomistic and electronic structure, optical, magnetic, superconducting, ferroelectric and other properties of solids, nanostructures and low-dimensional systems as well as device applications. Rapid Research Letters particularly invites papers from interdisciplinary and emerging new areas of research.