Physica Status Solidi-Rapid Research Letters最新文献_第4页

Robust Contact by Direct Formation of C‐Au Bond in Suspended Armchair Graphene Nanoribbon 通过在悬浮扶手石墨烯纳米带中直接形成 C-Au 键实现稳健接触

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-06-28 DOI: 10.1002/pssr.202400192

Abdou Hassanien

{"title":"Robust Contact by Direct Formation of C‐Au Bond in Suspended Armchair Graphene Nanoribbon","authors":"Abdou Hassanien","doi":"10.1002/pssr.202400192","DOIUrl":"https://doi.org/10.1002/pssr.202400192","url":null,"abstract":"The Schottky contact between metal electrode and armchair graphene nanoribbon (AGNR) plays a fundamental role in limiting the current flow as well as the overall device characteristics. To improve device performance, the metal electrode must be engineered to lower barrier height and allow low‐resistance ohmic contact. Nevertheless, in most cases this gives rise to interfacial states which dictate the contact properties and induce Fermi level pinning. Here we demonstrate another strategy to form robust and transparent 7‐atom‐wide‐AGNR (7‐AGNR)/Au contacts in which direct C‐Au σ bond is initialized by the tip of scanning tunneling microscope (STM) on a dehydrogenated terminus. This process has led to a total lift‐off of 7‐AGNR from the Au(111) substrate and allowed us to visualize the details of the band structure of 7‐AGNR. Furthermore, we find GNR useful as a STM tip for high‐resolution selective imaging of edge states showing a unique interference pattern with a periodicity that coincides with half of Fermi wavelength of GNR lattice. The combination of imaging and tunneling spectroscopy with GNR‐tip is promising for unraveling intrinsic details in the band structure which are of fundamental importance to understand the transport properties of GNRs devices.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"21 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141518741","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Full‐Color Electroluminescence from ZnO‐Nanoparticles‐based Homojunction Diodes 基于氧化锌-纳米粒子的同质结二极管发出全彩电致发光

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-06-27 DOI: 10.1002/pssr.202400149

Raj Deep, Toshiyuki Yoshida, Yasuhisa Fujita

{"title":"Full‐Color Electroluminescence from ZnO‐Nanoparticles‐based Homojunction Diodes","authors":"Raj Deep, Toshiyuki Yoshida, Yasuhisa Fujita","doi":"10.1002/pssr.202400149","DOIUrl":"https://doi.org/10.1002/pssr.202400149","url":null,"abstract":"Wide‐bandgap zinc oxide (ZnO)‐based light‐emitting diodes (LEDs) have attracted considerable interest for application in solid‐state lighting; however, the absence of dependable high‐quality homojunctions has impeded their progress. A p‐n homojunction LED is fabricated in this study using arc discharge‐fabricated N‐doped ZnO nanoparticles (NPs) spin‐coated over a Ga‐doped ZnO thin film. The homojunction LEDs demonstrate pure ultraviolet (UV) emissions with a narrow linewidth even at elevated temperatures. The UV intensity initially increases as the injection current increases to the saturation limit with a change in the peak position, followed by a decrease at higher injection currents. A proportion of UV light is down‐converted into visible light using phosphors. Furthermore, the mixing of phosphors and their application to a UV‐LED results in white emission with high color rendering and superior optical stability. Notably, the visible spectral peaks do not discernibly change with variations in the operating current. These findings represent significant advancements in the development of stable p‐type ZnO nanostructures, leading to the development of cost‐effective photonic devices.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"151 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141518743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Light Logic Gates with GaAs‐Based Structures 采用砷化镓基结构的光逻辑门

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-06-27 DOI: 10.1002/pssr.202400173

Feyza Sonmez, Sukru Ardali, Burcu Arpapay, Selman Mutlu, Ayse Aygul Ergurhan, Onur Senel, Ugur Serincan, Ayse Erol, Engin Tiras

{"title":"Light Logic Gates with GaAs‐Based Structures","authors":"Feyza Sonmez, Sukru Ardali, Burcu Arpapay, Selman Mutlu, Ayse Aygul Ergurhan, Onur Senel, Ugur Serincan, Ayse Erol, Engin Tiras","doi":"10.1002/pssr.202400173","DOIUrl":"https://doi.org/10.1002/pssr.202400173","url":null,"abstract":"The novel XOR, OR, and NAND optical logic gates have been investigated using GaAs‐based Hot Electron Light Emission and Lasing in Semiconductor Heterostructures (HELLISH) devices. The HELLISH devices are fabricated in the Top Hat Hot HELLISH (TH‐HELLISH) geometry to achieve a non‐linear potential distribution at the p‐n junction which consists of a 13 nm thick GaAs quantum well placed on the n‐side of the junction. Logic gates whose input part is designed as an electric field output beam incorporate four independent contacts to the p‐ and n‐type layers. Electroluminescence measurements of the output beam are performed by applying a pulsed voltage of approximately 150 V with a pulse width of 200 ns and a frequency of 20 kHz to the contacts of the TH‐HELLISH device. At room temperature, the primary emission wavelength of the optical logic gates is around 840±1 nm. It is expected that optical logic gates obtained using this type of GaAs semiconductor structure have crucial potential to be components for high‐speed optical communication technology due to their simplicity, polarity‐independent operation, and emission wavelength.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"49 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141518744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Nonlinear and Optical Limiting Properties of Graphene‐Ferrite Nanocomposites: A Review 石墨烯-铁氧体纳米复合材料的非线性和光学极限特性：综述

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-06-26 DOI: 10.1002/pssr.202400105

M. Saravanan

引用次数: 0

Nonlinear Hall effect in isotropic k‐cubed Rashba model: Berry‐curvature‐dipole engineering by in‐plane magnetic field 各向同性 k 立方体 Rashba 模型中的非线性霍尔效应：面内磁场的贝里曲率偶极子工程

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-06-25 DOI: 10.1002/pssr.202400123

A. Krzyżewska, A. Dyrdal

引用次数: 0

In‐situ Observation of Atomic Diffusion at Epitaxial Al/Si Interface 外延铝/硅界面原子扩散的原位观测

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-06-22 DOI: 10.1002/pssr.202400175

Jinlin Wang, Qi Liu, Ran Feng, Haotian Ye, Xifan Xu, Rui Wang, Tao Wang, Xinqiang Wang

{"title":"In‐situ Observation of Atomic Diffusion at Epitaxial Al/Si Interface","authors":"Jinlin Wang, Qi Liu, Ran Feng, Haotian Ye, Xifan Xu, Rui Wang, Tao Wang, Xinqiang Wang","doi":"10.1002/pssr.202400175","DOIUrl":"https://doi.org/10.1002/pssr.202400175","url":null,"abstract":"High‐quality aluminum (Al) /silicon (Si) heterojunction is crucial in a wide range of applications, such as superconductivity, interfacial heat exchanging, interconnection of Si‐based transistors, etc. However, serious Al/Si heterointerface degradation has been observed when operating at relatively higher temperatures. Understanding the interfacial atomic diffusion is thus a vital step for improving the Al/Si interface quality. We report the atomic diffusion behavior at an epitaxial Al/Si interface via in‐situ heating in Cs‐corrected scanning transmission electron microscopy (STEM). After heating to 493 ± 20 K, the Al/Si interface gradually migrates towards the Al side. This interfacial atomic migration is more active along grain boundaries due to weaker bonding between atoms caused by misorientation of grains. The new interface exhibits a trapezoidal shape, characterized by a slanted smooth left facet and a stepped right facet. This distinct morphology is attributed to minimizing the interfacial energy. Additionally, the migrated Si atoms tend to form a new nanocrystal following the initial lattice orientation in Al, while the diffused Al atoms are usually randomly inserted into the Si lattice matrix among a large region, which can be attributed to lower bonding energy of Al compared with Si.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"22 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141529025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dynamically tunable half‐ring Fano resonator based on black phosphorus 基于黑磷的动态可调半环法诺谐振器

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-06-22 DOI: 10.1002/pssr.202400114

Junyan Cheng, Weiliang Zeng, Wen Zhang, Yuanmei Xu, Kunhua Wen, Weijun Sun, Xiaozhao Fang, Yonghui Huang, Xue-Shi Li

{"title":"Dynamically tunable half‐ring Fano resonator based on black phosphorus","authors":"Junyan Cheng, Weiliang Zeng, Wen Zhang, Yuanmei Xu, Kunhua Wen, Weijun Sun, Xiaozhao Fang, Yonghui Huang, Xue-Shi Li","doi":"10.1002/pssr.202400114","DOIUrl":"https://doi.org/10.1002/pssr.202400114","url":null,"abstract":"A tunable material black phosphorus (BP) terahertz (THz) half‐ring Fano resonator is proposed, exhibiting enhanced sensitivity, tunable frequency parameters, and the flexible sensing range. A half‐ring is positioned above the main channel, while a groove is excavated beneath it to produce the Fano resonance. The discrete mode of the half‐ring is coupled with the continuous mode of the groove, leading to a significantly enhanced sensitivity. This sensor can pick up subtle changes in the surrounding environment. Additionally, the incorporation of BP into the half‐ring positioned above the channel enables the flexible adjustment of the Fano resonator's resonant frequency. This adjustment is achieved through the manipulation of the electron doping concentration of the BP material. At the third‐order resonance around 5.81 THz, the frequency shift margin can reach 160 GHz. Adjusting the structural parameters of the Fano resonator, such as the radius of its outer ring, the distance of this ring to the main channel, and the groove's height, significantly affects its transmission spectrum. The Fano resonator demonstrates its considerable potential for applications in the field of integrated electronics. It not only provides an innovative design perspective, but also lays the foundation for the study of THz systems.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"12 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141518746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Inductance and Q‐factor of micro‐magnetic inductor are enhanced by FeCoB films with self‐bias 带有自偏压的铁钴薄膜增强了微型磁性电感器的电感和 Q 因子

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-06-21 DOI: 10.1002/pssr.202400167

Chao Sun, Dalong Qiu, Peng Li, Zhao Yao, Weihua Zong, Shandong Li

{"title":"Inductance and Q‐factor of micro‐magnetic inductor are enhanced by FeCoB films with self‐bias","authors":"Chao Sun, Dalong Qiu, Peng Li, Zhao Yao, Weihua Zong, Shandong Li","doi":"10.1002/pssr.202400167","DOIUrl":"https://doi.org/10.1002/pssr.202400167","url":null,"abstract":"As technology progresses, the operational frequencies of electronic devices have migrated into the GHz range. As an important electronic device, the compatibility of the preparation process of inductors with integrated circuits also needs to be improved. Currently, most commercial inductors are constructed from ferrite materials, making them challenging to integrate with integrated circuits. In this study, FeCoB films with a self‐biased ferromagnetic frequency up to 21 GHz were deposited on Si substrates using the compositional gradient sputtering method as a magnetic underlayer. A reasonable inductance structure is designed using HFSS simulation software. A series of planar spiral inductors with various turns were fabricated by photolithographic micromachining on the FeCoB films with a polyimide insertion between them. The preparation process is completely based on semiconductor technology and has good compatibility with integrated circuits. The results show that the inductance L and quality factor Q are greatly improved by the introduction of high‐frequency FeCoB film. The inductance is improved by 71% and the quality factor is improved by 166%. This clearly demonstrates that FeCoB thin films are highly suitable for use as inductor cores and can be seamlessly integrated with integrated circuits, offering excellent prospects for use in high‐frequency integrated circuits.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"82 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141518747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Phonon‐polaritonic resonances on nanopillars of hexagonal boron nitride for surface enhanced infrared absorption 用于表面增强红外吸收的六方氮化硼纳米柱上的声子-极化共振

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-06-20 DOI: 10.1002/pssr.202400163

Junhui Wang, Xiang Li, Youyi Ding, Lan Zhang, Haijun Zhao, Yidan Hu, Wei Du, Tao Wang

{"title":"Phonon‐polaritonic resonances on nanopillars of hexagonal boron nitride for surface enhanced infrared absorption","authors":"Junhui Wang, Xiang Li, Youyi Ding, Lan Zhang, Haijun Zhao, Yidan Hu, Wei Du, Tao Wang","doi":"10.1002/pssr.202400163","DOIUrl":"https://doi.org/10.1002/pssr.202400163","url":null,"abstract":"Phonon polaritons (PhPs) in hexagonal boron nitride enable sharp mid‐infrared optical resonance with strong spatial confinement, making them promising for surface enhanced infrared absorption spectroscopy. Here, using colloidal nanosphere lithography, we have fabricated hBN nanopillar antennas and demonstrated their PhP resonances in a cost‐effective way. By varying the diameters of the hBN nanopillars, the PhP resonance can be readily tuned to match the molecular vibrations of CBP (4,4′‐bis(N‐carbazolyl)‐1,1′‐biphenyl) molecules. Upon frequency matching, the coupling between the PhP resonance and the molecular vibration shows pronounced mode splitting, illustrating the SEIRA behaviour with a coupling strength approaching the strong coupling regime. While, with slight frequency mismatching around 10 cm‐1, the coupling strength decrease significantly, indicating a high sensitivity of the SEIRA activities to the resonance frequency of hBN nanopillar antennas. Our findings provide a new method for the fabrication of PhP nanoantennas and may promote the development of PhPs in SEIRA‐based mid‐infrared sensing applications.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"33 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141518748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Annealing Process on MOS channel Properties for Quasi‐Vertical GaN‐on‐Sapphire Trench MOSFET 退火工艺对准垂直蓝宝石氮化镓沟槽 MOSFET MOS 沟道特性的影响

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-06-01 DOI: 10.1002/pssr.202400075

Jiaan Zhou, An Yang, Guohao Yu, Runxian Xing, Bohan Guo, Chunfeng Hao, Yu Li, Bosen Liu, Huixin Yue, Jinxia Jiang, Li Zhang, Xuguang Deng, Zhongming Zeng, Baoshun Zhang, Xinping Zhang

{"title":"Annealing Process on MOS channel Properties for Quasi‐Vertical GaN‐on‐Sapphire Trench MOSFET","authors":"Jiaan Zhou, An Yang, Guohao Yu, Runxian Xing, Bohan Guo, Chunfeng Hao, Yu Li, Bosen Liu, Huixin Yue, Jinxia Jiang, Li Zhang, Xuguang Deng, Zhongming Zeng, Baoshun Zhang, Xinping Zhang","doi":"10.1002/pssr.202400075","DOIUrl":"https://doi.org/10.1002/pssr.202400075","url":null,"abstract":"Quasi‐vertical GaN trench‐gate MOSFETs with different etch RF power and the impact of the order of annealing process in TMAH wet treatment have been fabricated and studied. The high‐power device has a threshold voltage of 5.3 V and a maximum saturation current density of 552 A/cm2, whereas the low‐power device has a threshold voltage of 4.5 V and a maximum saturation current density of 650 A/cm2. However, the low‐power device has more severe off‐state leakage due to more fixed charges and defects on the device surface. Furthermore, the annealing process serves as an additional step before wet treatment. SEM image indicates that annealing at high temperatures prior to etching can eliminate surface oxide and redistribute surface imperfections, resulting in a smoother sidewall morphology. The relationship between temperature and mobility confirms the impact of the crystal surface feature on device performance.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"52 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141191841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0