Optoelectronic transistor based on InSe/MoS2 heterostructure for multimodal nociceptor

Abstract

The artificial nociceptor is a device that simulates the biological nociception system, which has a wide range of applications in the fields of medicine, rehabilitation, and robotics. Multimodal nociceptors can respond to diverse stimuli, including visual, mechanical, and thermal, etc., and then convert them into neural signals for processing by the brain. Here, a back‐gate optoelectronic transistor based on 2‐dimensional InSe/MoS2 heterostructure is demonstrated, by employing energy band alignment of the heterojunction, the device exhibits high sensitivity (106) and high responsivity (330 AW‐1) to harmful UV irradiation, which can be exploited to emulate the key features of nociceptors, including “threshold”, “relaxation”, “no adaptation” and “sensitization”. Moreover, the device can be operated in a two‐terminal mode, memristive characteristics is obtained through applying source‐drain voltages. Then, artificial nociceptive behaviors respond to external electrical pulses have been successfully emulated. Finally, the modulation of nociceptive sensitivity can be achieved through the controlling gate bias, which fully demonstrates the potential of our device for the application of bio‐mimetic multimodal artificial nociceptors in future neuromorphic sensory system.This article is protected by copyright. All rights reserved.