Semiconductor Science and Technology最新文献_第2页

Characterizations of Two-photon Absorption Process Induced by Defects in Aluminum Nitride Using Z-scan Method 利用 Z 扫描法分析氮化铝缺陷诱发的双光子吸收过程

Semiconductor Science and Technology Pub Date : 2024-05-22 DOI: 10.1088/1361-6641/ad4f09

Jingan Zhou, Tao Li, Xuan Zhao, Xiang Zhang, Jacques Doumani, Mingfei Xu, Ziyi He, S. Luo, Zhaobo Mei, Cheng Chang, Jacob Robinson, P. Ajayan, Junichiro Kono, Yuji Zhao

引用次数: 0

Nonvolatile Bipolar Resistive Switching Characteristics of Aluminum Oxide Grown by Thermal Oxidation Processes 热氧化工艺生长的氧化铝的非挥发性双极电阻开关特性

Semiconductor Science and Technology Pub Date : 2024-05-22 DOI: 10.1088/1361-6641/ad4f08

Wun-Ciang Jhang, Yu-Sheng Chien, Chih-Chieh Hsu

引用次数: 0

Enhancing light absorption of deep ultraviolet photodiodes through intelligent algorithm-guided design of resonant nano-optical structures 通过智能算法指导设计谐振纳米光学结构增强深紫外光二极管的光吸收能力

Semiconductor Science and Technology Pub Date : 2024-05-20 DOI: 10.1088/1361-6641/ad4dd9

Yifan Zhu, Huimin Lu, Jianping Wang, Liya Feng, Jianhua Ma, Tongjun Yu, Junze Li

{"title":"Enhancing light absorption of deep ultraviolet photodiodes through intelligent algorithm-guided design of resonant nano-optical structures","authors":"Yifan Zhu, Huimin Lu, Jianping Wang, Liya Feng, Jianhua Ma, Tongjun Yu, Junze Li","doi":"10.1088/1361-6641/ad4dd9","DOIUrl":"https://doi.org/10.1088/1361-6641/ad4dd9","url":null,"abstract":"\u0000 The surface of the deep ultraviolet (DUV) photodiodes requires an enhanced light absorption to improve wall-plug efficiency. The resonant Mie scatterer has a high optical mode density with a high refractive index all-dielectric resonant structure, which causes strong light coupling and improves forward scattering, providing a new perspective for efficient light absorption on the surface of the DUV photodiodes. In this work, a method is proposed for the design of nano-optical structures that is capable of supporting forward light scattering across the resonant bandwidth. This is achieved by utilizing intelligent algorithms in conjunction with Maxwell’s equations. The results show that the average light absorption coefficient of the optimized optical structure is improved to more than 96% with angle-independent and polarization-independent characteristics. Based on intelligent algorithms, a reverse design approach can be employed to maximize this effect, thereby offering novel avenues for enhancing the wall-plug efficiency of the DUV photodiodes.","PeriodicalId":507064,"journal":{"name":"Semiconductor Science and Technology","volume":"23 20","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141120876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Comparing the mean inner potential of Zn-VI semiconductor nanowires using off-axis electron holography 利用离轴电子全息技术比较 Zn-VI 半导体纳米线的平均内电势

Semiconductor Science and Technology Pub Date : 2024-05-20 DOI: 10.1088/1361-6641/ad4dd7

Anitha Jose, Sarry Al-Turk, Harry E. Ruda, Simon P Watkins, Martha R McCartney, Cristina Cordoba, K. L. Kavanagh

引用次数: 0

Ultraviolet electroluminescence with electrically tunable colour from epitaxial n-(0001)ZnO/p-(0001)GaN light-emitting diodes 外延 n-(0001)ZnO/p-(0001)GaN 发光二极管发出具有电可调颜色的紫外电致发光

Semiconductor Science and Technology Pub Date : 2024-05-19 DOI: 10.1088/1361-6641/ad4d59

Simran Arora, Subhrajit Sikdar, Subhabrata Dhar

{"title":"Ultraviolet electroluminescence with electrically tunable colour from epitaxial n-(0001)ZnO/p-(0001)GaN light-emitting diodes","authors":"Simran Arora, Subhrajit Sikdar, Subhabrata Dhar","doi":"10.1088/1361-6641/ad4d59","DOIUrl":"https://doi.org/10.1088/1361-6641/ad4d59","url":null,"abstract":"\u0000 Pulsed laser deposition (PLD) technique is used to grow unintentionally n-type (0001)ZnO layers with high crystalline and morphological qualities on p-type (0001)GaN/sapphire templates. Electroluminescent devices are fabricated on these p-n heterojunctions. Oxygen pressure during growth has been found to influence strongly the crystalline and defect properties of the grown layers, which affect not only the current-voltage characteristics but also the emission properties of the electroluminescent devices. It has been observed that the electroluminescence (EL) spectra have both defects related visible and band-edge related ultraviolet (UV) transition features stemming from both GaN and ZnO sides. The study reveals that UV to visible EL intensity ratio maximizes at an optimum oxygen pressure. The relative contribution of EL originating from ZnO and GaN sides can be tuned by the applied bias, as the bias can control the depletion width and hence the carrier interdiffusion across the junction. This finding thus offers a scope to electrically tune the color of the emitted light in these devices.","PeriodicalId":507064,"journal":{"name":"Semiconductor Science and Technology","volume":"36 7","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141123464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Comprehensive empirical modeling of ScAlN/AlGaN/GaN ferroelectric HEMT ScAlN/AlGaN/GaN 铁电 HEMT 的综合经验建模

Semiconductor Science and Technology Pub Date : 2024-05-19 DOI: 10.1088/1361-6641/ad4d5a

Dariskhem Pyngrope, Nidhi Chaturvedi, S. Dasgupta, Alice Hospodkova, Shubhankar Majumdar

{"title":"Comprehensive empirical modeling of ScAlN/AlGaN/GaN ferroelectric HEMT","authors":"Dariskhem Pyngrope, Nidhi Chaturvedi, S. Dasgupta, Alice Hospodkova, Shubhankar Majumdar","doi":"10.1088/1361-6641/ad4d5a","DOIUrl":"https://doi.org/10.1088/1361-6641/ad4d5a","url":null,"abstract":"\u0000 This correspondence introduces a concise depiction of a High Electron Mobility transistor (HEMT) utilizing a model that incorporates the effect of ferroelectric (FE) polarization on the empirical expression for drain current. This is accomplished by modifying the basic Shockley Equation (S.E) for MESFET. The model employed in this investigation is particularly geared towards investigating the impact of the counterclockwise hysteresis effect due to the use of dielectric ScAlN on the transfer characteristics (Id − Vgs), which is mainly attributed to trapping and de-trapping of charge carriers at the dielectric/semiconductor interface. Modifying the S.E. made it possible to replicate the behavior observed in experimental HEMT accurately. We reported the modified drain current empirical expressions for the ScAlN/AlGaN/GaN HEMT that considers the FE polarization. The results of this study showed good agreement between the Id − Vgs characteristics obtained from the analytical and experimental data, with a root mean square deviation (RMSD) error of 0.97% and a mean squared error (MSE) error of 0.94%. This analytical drain current model, presented herein for the first time, incorporates a limited number of fitting parameters. Therefore, enhancing the computational efficiency to assess the performance of ferroelectric GaN HEMTs for usage in wide-area electronics.","PeriodicalId":507064,"journal":{"name":"Semiconductor Science and Technology","volume":"13 2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141123907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Terahertz emission mechanisms in low-temperature-grown and semi-insulating gallium arsenide photoconductive antenna devices excited at above- and below-bandgap photon energies 在高于和低于带隙光子能量下激发的低温生长和半绝缘砷化镓光电导天线器件的太赫兹发射机制

Semiconductor Science and Technology Pub Date : 2024-04-25 DOI: 10.1088/1361-6641/ad4322

L. N. Dela Rosa, Jairrus Publico, N. Cabello, J. P. Ferrolino, V. P. Juguilon, I. C. Verona, A. Salvador, A. Somintac, A. De los Reyes, H. Bardolaza, E. Estacio

{"title":"Terahertz emission mechanisms in low-temperature-grown and semi-insulating gallium arsenide photoconductive antenna devices excited at above- and below-bandgap photon energies","authors":"L. N. Dela Rosa, Jairrus Publico, N. Cabello, J. P. Ferrolino, V. P. Juguilon, I. C. Verona, A. Salvador, A. Somintac, A. De los Reyes, H. Bardolaza, E. Estacio","doi":"10.1088/1361-6641/ad4322","DOIUrl":"https://doi.org/10.1088/1361-6641/ad4322","url":null,"abstract":"\u0000 In this work, the terahertz (THz) time-domain spectroscopy was employed in studying the carrier dynamics in low-temperature grown (LT-) and semi-insulating (SI-) gallium arsenide (GaAs) photoconductive antenna (PCA) at above- (λ = 780 nm, Eg = 1.59 eV) and below- (λ = 1.55 μm, Eg 0.80 eV) bandgap excitation. We measured the excitation power dependence of the LT-GaAs (SI-GaAs) THz emission. Then, the equivalent circuit model (ECM) which considers the (i) photogeneration, (ii) screening effects, and (iii) transport of carriers was utilized in analyzing the THz radiation mechanisms in the above- and below-bandgap excitation of the two substrates. In simulating the above-bandgap THz emission of both PCAs, we employed the direct bandgap excitation model which takes into account the band-to-band transitions of photoexcited carriers. Meanwhile, to simulate the LT-GaAs (SI-GaAs) THz emission at below-bandgap excitation we utilized the two-step photoabsporption facilitated by the mid-gap states. In this model the photoexcited carriers jump from the valence band to the mid-gap states and then to the conduction band. Results suggest that the THz emission from LT-GaAs and SI-GaAs at above- and below-bandgap excitation occur due to band-to-band transitions, and two-step photoabsorption process via midgap states, respectively.","PeriodicalId":507064,"journal":{"name":"Semiconductor Science and Technology","volume":"12 6","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140653783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Negative Capacitance Field Effect Transistor with Modified Gate Stack and Drain-sided cavity for Label-free Biosensing 用于无标签生物传感的具有改良栅极叠层和漏极空腔的负电容场效应晶体管

Semiconductor Science and Technology Pub Date : 2024-04-24 DOI: 10.1088/1361-6641/ad42cc

Harshit Kansal, A. Medury

{"title":"Negative Capacitance Field Effect Transistor with Modified Gate Stack and Drain-sided cavity for Label-free Biosensing","authors":"Harshit Kansal, A. Medury","doi":"10.1088/1361-6641/ad42cc","DOIUrl":"https://doi.org/10.1088/1361-6641/ad42cc","url":null,"abstract":"\u0000 Dielectrically modulated (DM) Negative Capacitance Field Effect Transistor (NCFET) based label-free Biosensors have emerged as promising devices for accurate detection of various biomolecules, where the sensitivity of DM architectures strongly depends on the sensing mechanism as well as on the size of the nano-cavity. Therefore, to achieve higher sensitivity along with reduced fabrication complexity, we propose to utilize a pre-existing drain-sided spacer region as a nano-cavity, in a Fully Depleted Silicon-on-insulator (FDSOI) based NCFET architecture. The Ferroelectric (FE) layer in the Metal-Ferroelectric-Insulator-Semiconductor (MFIS) configuration meaningfully alters the impact of drain's electric field on the source-sided electrostatics, which results in higher sensitivity. Having quantified the sensitivity for an FE-DE gate stack based NCFET Biosensor, we now propose to include a Paraelectric (PE) layer between Ferroelectric (FE) and Dielectric (DE) materials, thus modifying the gate stack from FE-DE to FE-PE-DE with an equivalent negative capacitance seen from both the stacks, where a remarkable improvement is seen in the FE-PE-DE gate stack based NCFET with nearly identical linearity performance as seen from the high value of Pearson's coefficient (r2 ≥ 0.9). Therefore, in order to illustrate the efficacy of the proposed sensing mechanism and the modified gate stack (FE-PE-DE), dielectric constant (kBio) values in the range of kBio = 4.5 to kBio = 75.99 are considered. Finally, the effect of scaling the channel length (Lg) on the sensitivity of the FE-PE-DE NCFET device is shown and a high value, particularly at lower permittivity, demonstrates the versatility and wide applicability of the proposed NCFET Biosensor.","PeriodicalId":507064,"journal":{"name":"Semiconductor Science and Technology","volume":"22 9","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140660357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Review of β-Ga2O3 solar-blind ultraviolet photodetector: growth, device, and application β-Ga2O3太阳盲紫外光探测器综述：生长、器件和应用

Semiconductor Science and Technology Pub Date : 2024-04-24 DOI: 10.1088/1361-6641/ad42cb

Hao Chen, Zhe Li, Zeyulin Zhang, Dinghe Liu, Liru Zeng, Yiru Yan, Dazheng Chen, Q. Feng, Jincheng Zhang, Yue Hao, Chunfu Zhang

{"title":"Review of β-Ga2O3 solar-blind ultraviolet photodetector: growth, device, and application","authors":"Hao Chen, Zhe Li, Zeyulin Zhang, Dinghe Liu, Liru Zeng, Yiru Yan, Dazheng Chen, Q. Feng, Jincheng Zhang, Yue Hao, Chunfu Zhang","doi":"10.1088/1361-6641/ad42cb","DOIUrl":"https://doi.org/10.1088/1361-6641/ad42cb","url":null,"abstract":"\u0000 Due to the excellent responsivity and high rejection ratio, Ga2O3-based solar-blind ultraviolet photodetectors are attracting more and more attention. The excellent material quality ensures great performance of photodetectors. In this review, we summarize recent advancements in growth methods of β-Ga2O3 bulk and thin films. Based on high-quality substrates and thin films, numerous state-of-art Ga2O3-based photodetectors have been reported in decades. Therefore, we collect some representative achievements in Ga2O3-based photodetectors, summarizing the development process of each type of structure. Furthermore, the advantages and disadvantages of different structures are also discussed to provide practical reference for researchers in this field. Additionally, inspired by the excellent performance of Ga2O3-based photodetectors, many research teams have also explored the applications based on solar-blind detection. We summarize three application fields, including imaging, light communication, and optical tracing, introducing some excellent works from different teams. Finally, we evaluate the outlook and remaining challenges in the future development of Ga2O3-based photodetectors.","PeriodicalId":507064,"journal":{"name":"Semiconductor Science and Technology","volume":"32 22","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140661288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Study of the photoluminescence properties of GaN irradiated with low fluence Ta ions 用低通量 Ta 离子照射氮化镓的光致发光特性研究

Semiconductor Science and Technology Pub Date : 2024-04-24 DOI: 10.1088/1361-6641/ad42ca

Wanting Wei, Guijuan Zhao, Jiande Liu, Xingliang Wang, Guipeng Liu

引用次数: 0