Semiconductor Science and Technology最新文献_第2页

Spatial correlation of defect-selective etching and dark luminescence spots in AlxGa1-xN AlxGa1-xN 中缺陷选择性蚀刻与暗发光点的空间相关性

Semiconductor Science and Technology Pub Date : 2024-05-24 DOI: 10.1088/1361-6641/ad5040

C. Netzel, S. Hagedorn, Matthias Schön, A. Knauer, Frank Brunner, Markus Weyers

{"title":"Spatial correlation of defect-selective etching and dark luminescence spots in AlxGa1-xN","authors":"C. Netzel, S. Hagedorn, Matthias Schön, A. Knauer, Frank Brunner, Markus Weyers","doi":"10.1088/1361-6641/ad5040","DOIUrl":"https://doi.org/10.1088/1361-6641/ad5040","url":null,"abstract":"\u0000 Defect-selective etching with molten Ba(OH)2/MgO etch drops was performed on c-plane AlGaN layers covering the entire composition range between GaN and AlN. Regardless of the aluminum content, the etchant produced shallow, hexagonal etch pits with depth-to-diameter ratios of 1/10 – 1/100. Two predominant types of etch pits were observed, which differed in size. In addition, the etch rate decreased from the center to the edge of the area exposed to the etch drops, providing a radially symmetric variation in etch pit size. For all AlGaN compositions, the positions of the etch pits correlate perfectly with the positions of the dark luminescence spots in cathodoluminescence measurements. Areas on the AlGaN samples that were not exposed to the etching procedure showed identical dark spots with the same size and density as those in the etched regions. Additionally, the density of etch pits and dark spots corresponded to the density of threading dislocations in the AlGaN layers. These observations demonstrate that the density of threading dislocations in c-plane AlGaN layers can be determined by destructive defect-selective etching with Ba(OH)2/MgO and etch pit counting, as well as by nondestructive counting of the dark spots in cathodoluminescence images.","PeriodicalId":507064,"journal":{"name":"Semiconductor Science and Technology","volume":"11 7","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141099094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of Rapid Thermal Annealing on DC Performance of Mg0.30Zn0.70O/Cd0.15Zn0.85O MOSHFET 快速热退火对 Mg0.30Zn0.70O/Cd0.15Zn0.85O MOSHFET 直流性能的影响

Semiconductor Science and Technology Pub Date : 2024-05-24 DOI: 10.1088/1361-6641/ad503f

Pawan Kumar, Brahmadutta Mahapatra, S. Chaudhary, R. Ako, Sharath Sriram, Shaibal Mukherjee

{"title":"Effect of Rapid Thermal Annealing on DC Performance of Mg0.30Zn0.70O/Cd0.15Zn0.85O MOSHFET","authors":"Pawan Kumar, Brahmadutta Mahapatra, S. Chaudhary, R. Ako, Sharath Sriram, Shaibal Mukherjee","doi":"10.1088/1361-6641/ad503f","DOIUrl":"https://doi.org/10.1088/1361-6641/ad503f","url":null,"abstract":"\u0000 This study focuses on a cost-effective method for fabrication of a metal oxide semiconductor-heterostructure field effect transistor (MOSHFET) based on MgZnO/CdZnO (MCO) using dual ion beam sputtering (DIBS), in contrast to the more expensive epitaxial growth system. The MOSHFETs developed in this research exhibit notable characteristics, such as a such as a substantial two-dimensional electron gas (2DEG) transconductance (~2.6 mS), a high ION/IOFF response ratio in the order of 108, and minimal gate leakage current. Furthermore, we explore the impact of rapid thermal annealing (RTA) on the drain current at various temperatures (600 and 800 ℃). The results indicate a fourfold improvement in drain current compared to unannealed conditions, primarily attributed to reduced contact resistance and no degradation in term of MgZnO/CdZnO structure. Additionally, an analysis of post-RTA treatment under a nitrogen (N2) atmosphere on gate leakage current is presented. The investigation spans temperatures ranging from 400 to 800 ℃, revealing that above 600 ℃ (gate leakage at 400 to 600 ℃ is around ~10-9 A), gate leakage in HFET is augmented by one order of magnitude (~10-8 A) due to a phase change in the dielectric. These findings underscore the feasibility of DIBS-grown MCO MOSHFETs as an economical solution for the mass production of switching devices and sensors.","PeriodicalId":507064,"journal":{"name":"Semiconductor Science and Technology","volume":"10 3","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141102557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Characterizations of Two-photon Absorption Process Induced by Defects in Aluminum Nitride Using Z-scan Method 利用 Z 扫描法分析氮化铝缺陷诱发的双光子吸收过程

Semiconductor Science and Technology Pub Date : 2024-05-22 DOI: 10.1088/1361-6641/ad4f09

Jingan Zhou, Tao Li, Xuan Zhao, Xiang Zhang, Jacques Doumani, Mingfei Xu, Ziyi He, S. Luo, Zhaobo Mei, Cheng Chang, Jacob Robinson, P. Ajayan, Junichiro Kono, Yuji Zhao

引用次数: 0

Nonvolatile Bipolar Resistive Switching Characteristics of Aluminum Oxide Grown by Thermal Oxidation Processes 热氧化工艺生长的氧化铝的非挥发性双极电阻开关特性

Semiconductor Science and Technology Pub Date : 2024-05-22 DOI: 10.1088/1361-6641/ad4f08

Wun-Ciang Jhang, Yu-Sheng Chien, Chih-Chieh Hsu

引用次数: 0

Spontaneous and tunable valley polarization in two-dimensional single-layer LaCl2 二维单层 LaCl2 中的自发可调谷极化

Semiconductor Science and Technology Pub Date : 2024-05-21 DOI: 10.1088/1361-6641/ad4e5f

Yan Li, Jia Li, Jianke Tian, Hengbo Liu, Junjie Shi

{"title":"Spontaneous and tunable valley polarization in two-dimensional single-layer LaCl2","authors":"Yan Li, Jia Li, Jianke Tian, Hengbo Liu, Junjie Shi","doi":"10.1088/1361-6641/ad4e5f","DOIUrl":"https://doi.org/10.1088/1361-6641/ad4e5f","url":null,"abstract":"\u0000 Applying the valley contrasting properties of valleytronic materials to logical operations is the foundation of valleytronic device manufacturing. It is predicted that single-layer LaCl2 is an ferrovalley material with intrinsic and tunable valley polarization through first-principles calculations. It is a ferromagnetic semiconductor (bandgap 0.767 eV) with roughly 1.0 μB per unit cell as well as out of plane magnetization, and the Curie temperature is about 149 K. The tight-binding model considering five orbitals as well as next nearest neighboring hopping get a consistent band structure with the first-principles calculation. The valley polarization changes from 40.49 to 98.51 meV under the biaxial strain of 5% ~ -5%. Therefore, the biaxial strain can be a means to tune the valley polarization. In addition, the valley polarization of the double-layer structure (~ 80 meV) is much greater than that of the single-layer structure (~ 59 meV) due to the increased magnetic moment of the double-layer structure, indicating the potential tunable character by stacking few layers. We believe that single-layer LaCl2 has great potential for device manufacturing and application in the field of valley electronics.","PeriodicalId":507064,"journal":{"name":"Semiconductor Science and Technology","volume":"94 21","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141116460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of distributed Bragg reflectors on optoelectronic characteristics of GaN-based flip-chip light-emitting diodes 分布式布拉格反射器对氮化镓基倒装芯片发光二极管光电特性的影响

Semiconductor Science and Technology Pub Date : 2024-05-20 DOI: 10.1088/1361-6641/ad4dd8

Yuechang Sun, Lang Shi, Yongjin Cui, Bin Tang, Qianxi Zhou, Jiaming Zhuang, Shengjun Zhou

{"title":"Effect of distributed Bragg reflectors on optoelectronic characteristics of GaN-based flip-chip light-emitting diodes","authors":"Yuechang Sun, Lang Shi, Yongjin Cui, Bin Tang, Qianxi Zhou, Jiaming Zhuang, Shengjun Zhou","doi":"10.1088/1361-6641/ad4dd8","DOIUrl":"https://doi.org/10.1088/1361-6641/ad4dd8","url":null,"abstract":"\u0000 Distributed Bragg reflectors have been widely utilized in GaN-based flip-chip light-emitting diodes (FCLEDs) owing to their excellent reflection performance. Recently, wide reflected angle DBR (WRA-DBR) has been suggested to enhance the optical characteristics of GaN-based FCLEDs by incorporating multiple sub-DBRs with varying central wavelengths. However, the reflectivity of WRA-DBR decreases at large incident angle from 425 nm to 550 nm, which restricts further optical performance improvement of FCLEDs. Here, we demonstrate a quintuple-stack DBR comprised of five sub-DBRs. The quintuple-stack DBR possesses a high reflectivity (>97.5%) for incident angles below 50° within the blue and green light wavelength ranges. Compared to WRA-DBR, quintuple-stack DBR exhibits a higher reflectivity in wavelength range of 425 nm to 550 nm and thinner multilayer thicknesses. Furthermore, stronger electric field intensities exist in the top facet and sidewalls of FCLED with quintuple-stack DBR, revealing that quintuple-stack DBR is beneficial for enhancing the light extraction efficiency. As a result, the light output power of FCLED with quintuple-stack DBR is ~3% higher than that of FCLED with WRA-DBR at 750 mA.","PeriodicalId":507064,"journal":{"name":"Semiconductor Science and Technology","volume":"24 6","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141122676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancing light absorption of deep ultraviolet photodiodes through intelligent algorithm-guided design of resonant nano-optical structures 通过智能算法指导设计谐振纳米光学结构增强深紫外光二极管的光吸收能力

Semiconductor Science and Technology Pub Date : 2024-05-20 DOI: 10.1088/1361-6641/ad4dd9

Yifan Zhu, Huimin Lu, Jianping Wang, Liya Feng, Jianhua Ma, Tongjun Yu, Junze Li

{"title":"Enhancing light absorption of deep ultraviolet photodiodes through intelligent algorithm-guided design of resonant nano-optical structures","authors":"Yifan Zhu, Huimin Lu, Jianping Wang, Liya Feng, Jianhua Ma, Tongjun Yu, Junze Li","doi":"10.1088/1361-6641/ad4dd9","DOIUrl":"https://doi.org/10.1088/1361-6641/ad4dd9","url":null,"abstract":"\u0000 The surface of the deep ultraviolet (DUV) photodiodes requires an enhanced light absorption to improve wall-plug efficiency. The resonant Mie scatterer has a high optical mode density with a high refractive index all-dielectric resonant structure, which causes strong light coupling and improves forward scattering, providing a new perspective for efficient light absorption on the surface of the DUV photodiodes. In this work, a method is proposed for the design of nano-optical structures that is capable of supporting forward light scattering across the resonant bandwidth. This is achieved by utilizing intelligent algorithms in conjunction with Maxwell’s equations. The results show that the average light absorption coefficient of the optimized optical structure is improved to more than 96% with angle-independent and polarization-independent characteristics. Based on intelligent algorithms, a reverse design approach can be employed to maximize this effect, thereby offering novel avenues for enhancing the wall-plug efficiency of the DUV photodiodes.","PeriodicalId":507064,"journal":{"name":"Semiconductor Science and Technology","volume":"23 20","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141120876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Comparing the mean inner potential of Zn-VI semiconductor nanowires using off-axis electron holography 利用离轴电子全息技术比较 Zn-VI 半导体纳米线的平均内电势

Semiconductor Science and Technology Pub Date : 2024-05-20 DOI: 10.1088/1361-6641/ad4dd7

Anitha Jose, Sarry Al-Turk, Harry E. Ruda, Simon P Watkins, Martha R McCartney, Cristina Cordoba, K. L. Kavanagh

引用次数: 0

Ultraviolet electroluminescence with electrically tunable colour from epitaxial n-(0001)ZnO/p-(0001)GaN light-emitting diodes 外延 n-(0001)ZnO/p-(0001)GaN 发光二极管发出具有电可调颜色的紫外电致发光

Semiconductor Science and Technology Pub Date : 2024-05-19 DOI: 10.1088/1361-6641/ad4d59

Simran Arora, Subhrajit Sikdar, Subhabrata Dhar

{"title":"Ultraviolet electroluminescence with electrically tunable colour from epitaxial n-(0001)ZnO/p-(0001)GaN light-emitting diodes","authors":"Simran Arora, Subhrajit Sikdar, Subhabrata Dhar","doi":"10.1088/1361-6641/ad4d59","DOIUrl":"https://doi.org/10.1088/1361-6641/ad4d59","url":null,"abstract":"\u0000 Pulsed laser deposition (PLD) technique is used to grow unintentionally n-type (0001)ZnO layers with high crystalline and morphological qualities on p-type (0001)GaN/sapphire templates. Electroluminescent devices are fabricated on these p-n heterojunctions. Oxygen pressure during growth has been found to influence strongly the crystalline and defect properties of the grown layers, which affect not only the current-voltage characteristics but also the emission properties of the electroluminescent devices. It has been observed that the electroluminescence (EL) spectra have both defects related visible and band-edge related ultraviolet (UV) transition features stemming from both GaN and ZnO sides. The study reveals that UV to visible EL intensity ratio maximizes at an optimum oxygen pressure. The relative contribution of EL originating from ZnO and GaN sides can be tuned by the applied bias, as the bias can control the depletion width and hence the carrier interdiffusion across the junction. This finding thus offers a scope to electrically tune the color of the emitted light in these devices.","PeriodicalId":507064,"journal":{"name":"Semiconductor Science and Technology","volume":"36 7","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141123464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Comprehensive empirical modeling of ScAlN/AlGaN/GaN ferroelectric HEMT ScAlN/AlGaN/GaN 铁电 HEMT 的综合经验建模

Semiconductor Science and Technology Pub Date : 2024-05-19 DOI: 10.1088/1361-6641/ad4d5a

Dariskhem Pyngrope, Nidhi Chaturvedi, S. Dasgupta, Alice Hospodkova, Shubhankar Majumdar

{"title":"Comprehensive empirical modeling of ScAlN/AlGaN/GaN ferroelectric HEMT","authors":"Dariskhem Pyngrope, Nidhi Chaturvedi, S. Dasgupta, Alice Hospodkova, Shubhankar Majumdar","doi":"10.1088/1361-6641/ad4d5a","DOIUrl":"https://doi.org/10.1088/1361-6641/ad4d5a","url":null,"abstract":"\u0000 This correspondence introduces a concise depiction of a High Electron Mobility transistor (HEMT) utilizing a model that incorporates the effect of ferroelectric (FE) polarization on the empirical expression for drain current. This is accomplished by modifying the basic Shockley Equation (S.E) for MESFET. The model employed in this investigation is particularly geared towards investigating the impact of the counterclockwise hysteresis effect due to the use of dielectric ScAlN on the transfer characteristics (Id − Vgs), which is mainly attributed to trapping and de-trapping of charge carriers at the dielectric/semiconductor interface. Modifying the S.E. made it possible to replicate the behavior observed in experimental HEMT accurately. We reported the modified drain current empirical expressions for the ScAlN/AlGaN/GaN HEMT that considers the FE polarization. The results of this study showed good agreement between the Id − Vgs characteristics obtained from the analytical and experimental data, with a root mean square deviation (RMSD) error of 0.97% and a mean squared error (MSE) error of 0.94%. This analytical drain current model, presented herein for the first time, incorporates a limited number of fitting parameters. Therefore, enhancing the computational efficiency to assess the performance of ferroelectric GaN HEMTs for usage in wide-area electronics.","PeriodicalId":507064,"journal":{"name":"Semiconductor Science and Technology","volume":"13 2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141123907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0