Jingan Zhou, Tao Li, Xuan Zhao, Xiang Zhang, Jacques Doumani, Mingfei Xu, Ziyi He, S. Luo, Zhaobo Mei, Cheng Chang, Jacob Robinson, P. Ajayan, Junichiro Kono, Yuji Zhao
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引用次数: 0
Abstract
In this work, we reported two-photon absorption (TPA) measurements for aluminum vacancies in AlN single crystals. We measured the linear transmission and identified the defect levels. Using the Z-scan method, we measured the TPA coefficients of the transitions between defect levels from 380 nm to 735 nm. The transition occurs between the aluminum vacancies defect levels. Furthermore, the power dependence shows good linear fitting, confirming the TPA mechanism. These results will be helpful for the design and fabrication of ultra-low loss waveguides and integrated photonics in the ultraviolet spectral range.
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