Semiconductor Science and Technology最新文献_第3页

Terahertz emission mechanisms in low-temperature-grown and semi-insulating gallium arsenide photoconductive antenna devices excited at above- and below-bandgap photon energies 在高于和低于带隙光子能量下激发的低温生长和半绝缘砷化镓光电导天线器件的太赫兹发射机制

Semiconductor Science and Technology Pub Date : 2024-04-25 DOI: 10.1088/1361-6641/ad4322

L. N. Dela Rosa, Jairrus Publico, N. Cabello, J. P. Ferrolino, V. P. Juguilon, I. C. Verona, A. Salvador, A. Somintac, A. De los Reyes, H. Bardolaza, E. Estacio

{"title":"Terahertz emission mechanisms in low-temperature-grown and semi-insulating gallium arsenide photoconductive antenna devices excited at above- and below-bandgap photon energies","authors":"L. N. Dela Rosa, Jairrus Publico, N. Cabello, J. P. Ferrolino, V. P. Juguilon, I. C. Verona, A. Salvador, A. Somintac, A. De los Reyes, H. Bardolaza, E. Estacio","doi":"10.1088/1361-6641/ad4322","DOIUrl":"https://doi.org/10.1088/1361-6641/ad4322","url":null,"abstract":"\u0000 In this work, the terahertz (THz) time-domain spectroscopy was employed in studying the carrier dynamics in low-temperature grown (LT-) and semi-insulating (SI-) gallium arsenide (GaAs) photoconductive antenna (PCA) at above- (λ = 780 nm, Eg = 1.59 eV) and below- (λ = 1.55 μm, Eg 0.80 eV) bandgap excitation. We measured the excitation power dependence of the LT-GaAs (SI-GaAs) THz emission. Then, the equivalent circuit model (ECM) which considers the (i) photogeneration, (ii) screening effects, and (iii) transport of carriers was utilized in analyzing the THz radiation mechanisms in the above- and below-bandgap excitation of the two substrates. In simulating the above-bandgap THz emission of both PCAs, we employed the direct bandgap excitation model which takes into account the band-to-band transitions of photoexcited carriers. Meanwhile, to simulate the LT-GaAs (SI-GaAs) THz emission at below-bandgap excitation we utilized the two-step photoabsporption facilitated by the mid-gap states. In this model the photoexcited carriers jump from the valence band to the mid-gap states and then to the conduction band. Results suggest that the THz emission from LT-GaAs and SI-GaAs at above- and below-bandgap excitation occur due to band-to-band transitions, and two-step photoabsorption process via midgap states, respectively.","PeriodicalId":507064,"journal":{"name":"Semiconductor Science and Technology","volume":"12 6","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140653783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Negative Capacitance Field Effect Transistor with Modified Gate Stack and Drain-sided cavity for Label-free Biosensing 用于无标签生物传感的具有改良栅极叠层和漏极空腔的负电容场效应晶体管

Semiconductor Science and Technology Pub Date : 2024-04-24 DOI: 10.1088/1361-6641/ad42cc

Harshit Kansal, A. Medury

{"title":"Negative Capacitance Field Effect Transistor with Modified Gate Stack and Drain-sided cavity for Label-free Biosensing","authors":"Harshit Kansal, A. Medury","doi":"10.1088/1361-6641/ad42cc","DOIUrl":"https://doi.org/10.1088/1361-6641/ad42cc","url":null,"abstract":"\u0000 Dielectrically modulated (DM) Negative Capacitance Field Effect Transistor (NCFET) based label-free Biosensors have emerged as promising devices for accurate detection of various biomolecules, where the sensitivity of DM architectures strongly depends on the sensing mechanism as well as on the size of the nano-cavity. Therefore, to achieve higher sensitivity along with reduced fabrication complexity, we propose to utilize a pre-existing drain-sided spacer region as a nano-cavity, in a Fully Depleted Silicon-on-insulator (FDSOI) based NCFET architecture. The Ferroelectric (FE) layer in the Metal-Ferroelectric-Insulator-Semiconductor (MFIS) configuration meaningfully alters the impact of drain's electric field on the source-sided electrostatics, which results in higher sensitivity. Having quantified the sensitivity for an FE-DE gate stack based NCFET Biosensor, we now propose to include a Paraelectric (PE) layer between Ferroelectric (FE) and Dielectric (DE) materials, thus modifying the gate stack from FE-DE to FE-PE-DE with an equivalent negative capacitance seen from both the stacks, where a remarkable improvement is seen in the FE-PE-DE gate stack based NCFET with nearly identical linearity performance as seen from the high value of Pearson's coefficient (r2 ≥ 0.9). Therefore, in order to illustrate the efficacy of the proposed sensing mechanism and the modified gate stack (FE-PE-DE), dielectric constant (kBio) values in the range of kBio = 4.5 to kBio = 75.99 are considered. Finally, the effect of scaling the channel length (Lg) on the sensitivity of the FE-PE-DE NCFET device is shown and a high value, particularly at lower permittivity, demonstrates the versatility and wide applicability of the proposed NCFET Biosensor.","PeriodicalId":507064,"journal":{"name":"Semiconductor Science and Technology","volume":"22 9","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140660357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Review of β-Ga2O3 solar-blind ultraviolet photodetector: growth, device, and application β-Ga2O3太阳盲紫外光探测器综述：生长、器件和应用

Semiconductor Science and Technology Pub Date : 2024-04-24 DOI: 10.1088/1361-6641/ad42cb

Hao Chen, Zhe Li, Zeyulin Zhang, Dinghe Liu, Liru Zeng, Yiru Yan, Dazheng Chen, Q. Feng, Jincheng Zhang, Yue Hao, Chunfu Zhang

{"title":"Review of β-Ga2O3 solar-blind ultraviolet photodetector: growth, device, and application","authors":"Hao Chen, Zhe Li, Zeyulin Zhang, Dinghe Liu, Liru Zeng, Yiru Yan, Dazheng Chen, Q. Feng, Jincheng Zhang, Yue Hao, Chunfu Zhang","doi":"10.1088/1361-6641/ad42cb","DOIUrl":"https://doi.org/10.1088/1361-6641/ad42cb","url":null,"abstract":"\u0000 Due to the excellent responsivity and high rejection ratio, Ga2O3-based solar-blind ultraviolet photodetectors are attracting more and more attention. The excellent material quality ensures great performance of photodetectors. In this review, we summarize recent advancements in growth methods of β-Ga2O3 bulk and thin films. Based on high-quality substrates and thin films, numerous state-of-art Ga2O3-based photodetectors have been reported in decades. Therefore, we collect some representative achievements in Ga2O3-based photodetectors, summarizing the development process of each type of structure. Furthermore, the advantages and disadvantages of different structures are also discussed to provide practical reference for researchers in this field. Additionally, inspired by the excellent performance of Ga2O3-based photodetectors, many research teams have also explored the applications based on solar-blind detection. We summarize three application fields, including imaging, light communication, and optical tracing, introducing some excellent works from different teams. Finally, we evaluate the outlook and remaining challenges in the future development of Ga2O3-based photodetectors.","PeriodicalId":507064,"journal":{"name":"Semiconductor Science and Technology","volume":"32 22","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140661288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Study of the photoluminescence properties of GaN irradiated with low fluence Ta ions 用低通量 Ta 离子照射氮化镓的光致发光特性研究

Semiconductor Science and Technology Pub Date : 2024-04-24 DOI: 10.1088/1361-6641/ad42ca

Wanting Wei, Guijuan Zhao, Jiande Liu, Xingliang Wang, Guipeng Liu

引用次数: 0

Carrier mobility dependence of indium antimonide-bismide on carrier concentration, temperature, and bismuth composition grown on semi-insulating gallium arsenide substrate 生长在半绝缘砷化镓衬底上的锑化双铟载流子迁移率与载流子浓度、温度和铋成分的关系

Semiconductor Science and Technology Pub Date : 2024-04-22 DOI: 10.1088/1361-6641/ad416f

W. Loke, K. Tan, S. Wicaksono, Soon Fatt Yoon

{"title":"Carrier mobility dependence of indium antimonide-bismide on carrier concentration, temperature, and bismuth composition grown on semi-insulating gallium arsenide substrate","authors":"W. Loke, K. Tan, S. Wicaksono, Soon Fatt Yoon","doi":"10.1088/1361-6641/ad416f","DOIUrl":"https://doi.org/10.1088/1361-6641/ad416f","url":null,"abstract":"\u0000 We explore the impact of carrier concentration, temperature, and bismuth (Bi) composition on the carrier mobility of indium antimonide-bismide (InSb1-x\u0000 Bi\u0000 x\u0000 ) material. Utilizing the molecular beam epitaxy (MBE) method, we achieved high Bi composition uniformity. This method also enables the InSb1-x\u0000 Bi\u0000 x\u0000 to be grown on semi-insulating (SI) GaAs substrate, effectively preventing parallel electrical conduction during Hall effect measurement. Our findings reveal that InSb1-x\u0000 Bi\u0000 x\u0000 doped with silicon (Si) and tellurium (Te) consistently exhibit n-type conductivity. In contrast, InSb1-x\u0000 Bi\u0000 x\u0000 doped with beryllium (Be) exhibit a transition from n to p type conductivity, subjected to the Be doping level and the measurement temperature. Based on these observations, we proposed an empirical model describing the dependence of InSb1-x\u0000 Bi\u0000 x\u0000 electron mobility on carrier concentration, temperature, and Bi composition, specifically for Si and Te-doped InSb1-x\u0000 Bi\u0000 x\u0000 samples. These insights gained from this study hold potential application in photodetector device simulations.","PeriodicalId":507064,"journal":{"name":"Semiconductor Science and Technology","volume":"48 5","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140672783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Analytical models of the electric field and carrier transit time in the base of bipolar junction transistors 双极结晶体管基极电场和载流子传输时间的分析模型

Semiconductor Science and Technology Pub Date : 2024-04-22 DOI: 10.1088/1361-6641/ad4170

Jian Cao, Yujie Bai, Jianhong Yang

引用次数: 0

Finite element simulation and experimental investigation of in-situ laser-assisted diamond turning of monocrystalline silicon 单晶硅原位激光辅助金刚石车削的有限元模拟和实验研究

Semiconductor Science and Technology Pub Date : 2024-04-19 DOI: 10.1088/1361-6641/ad40c8

Wangjie Hu, Xuesen Zhao, Tao Sun, Junjie Zhang

{"title":"Finite element simulation and experimental investigation of in-situ laser-assisted diamond turning of monocrystalline silicon","authors":"Wangjie Hu, Xuesen Zhao, Tao Sun, Junjie Zhang","doi":"10.1088/1361-6641/ad40c8","DOIUrl":"https://doi.org/10.1088/1361-6641/ad40c8","url":null,"abstract":"\u0000 While the effectiveness of in-situ laser-assisted diamond turning (In-LAT) for promoting the ductile machinability of monocrystalline silicon has been demonstrated, the underlying cutting mechanisms remain inadequately understood. In this study, we investigate the fundamental mechanisms involved in the In-LAT of monocrystalline silicon by finite element simulations and experiments. Specifically, a finite element model of In-LAT of monocrystalline silicon is developed, which incorporates a Drucker-Prager constitutive model to address the brittle fracture of the material, as well as temperature-dependent materials properties to address the thermal softening effect. Furthermore, experiments of In-LAT of monocrystalline silicon are conducted with the self-developed In-LAT device, including tapering cutting and end face cutting. Simulation results demonstrate that In-LAT significantly increases the critical depth of cut for the brittle-to-ductile transition of monocrystalline silicon in tapering cutting mode by 72.2% compared to conventional cutting, accompanied with significantly reduced cutting forces, continuous chip profile and reduced surface brittle damage. The promotion of ductile machinability of monocrystalline silicon under In-LAT is attributed to the reduction and dispersion of stress in the cutting zone, which is in contrast to the significant stress concentration at the rake face and cutting edge in conventional cutting. And simulation results also provide an optimal temperature field of 900 K for the In-LAT of monocrystalline silicon, above which the excessive plastic flow accompanied by thermal accumulation results into deteriorated surface roughness. These findings provide valuable insights for understanding the cutting mechanisms of In-LAT and the parameter optimization for In-LAT application.","PeriodicalId":507064,"journal":{"name":"Semiconductor Science and Technology","volume":" July","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140682659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Observation of negative capacitance in silicon heterojunction solar cells: role of front contact in carrier depopulation 观察硅异质结太阳能电池中的负电容：前电极在载流子耗尽中的作用

Semiconductor Science and Technology Pub Date : 2024-04-19 DOI: 10.1088/1361-6641/ad40c6

Mrutyunjay Nayak, Ashutosh Pandey, Sourav Mandal, V. Komarala

{"title":"Observation of negative capacitance in silicon heterojunction solar cells: role of front contact in carrier depopulation","authors":"Mrutyunjay Nayak, Ashutosh Pandey, Sourav Mandal, V. Komarala","doi":"10.1088/1361-6641/ad40c6","DOIUrl":"https://doi.org/10.1088/1361-6641/ad40c6","url":null,"abstract":"\u0000 The origin of the low-frequency inductive loop in the Nyquist plot of the Ag/ITO/p-a-Si:H/i-a-Si:H/c-Si/i-a-Si:H/n-a-Si:H/ITO/Al heterojunction (SHJ) solar cells and their effect on the device performance are investigated by adopting impedance spectroscopy under dark and light. The negative capacitance/low-frequency inductive loop originates from the depopulation of injected charge carriers at the front junction's transport barrier. The p-a-Si:H hole-selective SHJ device with a low-frequency inductive loop also has shown an S-shape and associated performance degradation in the light current density-voltage characteristics due to the opposing field type transport barrier present at the p-a-Si:H/ITO interface, which was overcome after vacuum annealing at 200 ºC. However, NiOx-based hole-selective contact Ag/ITO/NiOx/i-a-Si:H/c-Si/i-a-Si:H/n-a-Si:H/ITO/Al SHJ solar cells have not shown any low-frequency inductive loop or corresponding S-shape and associated performance degradation due to the optimised contact (minimum resistance) between the NiOx and indium tin oxide (ITO) layers.","PeriodicalId":507064,"journal":{"name":"Semiconductor Science and Technology","volume":" 65","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140683309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electronic signal for mechanical failure in two-dimensional g-SiC 二维 g-SiC 机械故障的电子信号

Semiconductor Science and Technology Pub Date : 2024-04-19 DOI: 10.1088/1361-6641/ad40c7

Jing Li, Tan Shi, Chenyang Lu, Qing Peng

引用次数: 0

Optimization of p-type contact for electrical injection and light extraction for 365nm UV-A LEDs 优化用于 365nm UV-A LED 的电注入和光萃取的 p 型触点

Semiconductor Science and Technology Pub Date : 2024-04-19 DOI: 10.1088/1361-6641/ad40c5

Yuting Li, Guangying Wang, Qinchen Lin, Shuwen Xie, Wentao Zhang, Timothy Shih, Jonathan Vigen, S. Mukhopadhyay, S. Pasayat, Chirag Gupta

引用次数: 0