Wanting Wei, Guijuan Zhao, Jiande Liu, Xingliang Wang, Guipeng Liu
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引用次数: 0
Abstract
The irradiation influences the properties of GaN. We studied the irradiation of n-type, p-type, and i-type GaN with 2.9865GeV Ta ions, with experimental irradiation fluence of 3×108, 3×109, and 2×1010 cm-2, respectively. Low fluence ion irradiation of GaN enhances the luminescence performance of the samples and releases stress between GaN and the sapphire substrate. We have proved that this is due to the displacement of Ga or N atoms repairing the defects caused by the entry of irradiated ions, thus enhancing the performance of GaN. This provides a reference for low fluence irradiation of GaN.
辐照会影响氮化镓的特性。我们研究了 2.9865GeV Ta 离子对 n 型、p 型和 i 型氮化镓的辐照,实验辐照通量分别为 3×108、3×109 和 2×1010 cm-2。对 GaN 进行低通量离子辐照可提高样品的发光性能,并释放 GaN 与蓝宝石衬底之间的应力。我们已经证明,这是由于辐照离子的进入导致 Ga 原子或 N 原子在修复缺陷时发生位移,从而提高了 GaN 的性能。这为氮化镓的低通量辐照提供了参考。