Nonvolatile Bipolar Resistive Switching Characteristics of Aluminum Oxide Grown by Thermal Oxidation Processes

Wun-Ciang Jhang, Yu-Sheng Chien, Chih-Chieh Hsu
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Abstract

This study proposes a bipolar resistive random-access memory (RRAM), which is fabricated using an aluminum oxide (AlOx) resistive switching (RS) layer. The RRAM shows a large memory window of 106 at a low read voltage of 0.5 V. In addition, high switching speed, high data retention capability, and superior read-disturb immunity are observed. AlOx layers are prepared by a thermal oxidation growth process. Aluminum metal films deposited on n+-Si wafers are oxidized at O2/(O2+N2) flow rate ratios of 50-100%. Al/AlOx/n+-Si device shows no RS behavior when the AlOx is grown in a pure O2 environment. As the O2/(O2+N2) flow rate ratio decreases to 50%, Al/AlOx:N/n+-Si device reveals stable bipolar RS characteristics. A filamentary mode based on oxygen interstitial and Al vacancy is proposed to explain the difference in electrical characteristics of AlOx devices prepared at different O2 flow rates.
热氧化工艺生长的氧化铝的非挥发性双极电阻开关特性
本研究提出了一种双极电阻式随机存取存储器(RRAM),它是利用氧化铝(AlOx)电阻开关(RS)层制造的。该 RRAM 在 0.5 V 的低读取电压下具有 106 的大存储窗口。此外,它还具有高开关速度、高数据保持能力和出色的抗读取干扰能力。氧化铝层是通过热氧化生长工艺制备的。沉积在 n+-Si 晶圆上的铝金属薄膜在 O2/(O2+N2)流量比为 50-100% 的条件下被氧化。当 AlOx 在纯氧气环境中生长时,Al/AlOx/n+-Si 器件没有 RS 行为。当 O2/(O2+N2)流速比降至 50%时,Al/AlOx:N/n+-Si 器件显示出稳定的双极 RS 特性。我们提出了一种基于氧间隙和铝空位的丝状模式,以解释在不同氧气流速下制备的 AlOx 器件的电气特性差异。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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