{"title":"Nonvolatile Bipolar Resistive Switching Characteristics of Aluminum Oxide Grown by Thermal Oxidation Processes","authors":"Wun-Ciang Jhang, Yu-Sheng Chien, Chih-Chieh Hsu","doi":"10.1088/1361-6641/ad4f08","DOIUrl":null,"url":null,"abstract":"\n This study proposes a bipolar resistive random-access memory (RRAM), which is fabricated using an aluminum oxide (AlOx) resistive switching (RS) layer. The RRAM shows a large memory window of 106 at a low read voltage of 0.5 V. In addition, high switching speed, high data retention capability, and superior read-disturb immunity are observed. AlOx layers are prepared by a thermal oxidation growth process. Aluminum metal films deposited on n+-Si wafers are oxidized at O2/(O2+N2) flow rate ratios of 50-100%. Al/AlOx/n+-Si device shows no RS behavior when the AlOx is grown in a pure O2 environment. As the O2/(O2+N2) flow rate ratio decreases to 50%, Al/AlOx:N/n+-Si device reveals stable bipolar RS characteristics. A filamentary mode based on oxygen interstitial and Al vacancy is proposed to explain the difference in electrical characteristics of AlOx devices prepared at different O2 flow rates.","PeriodicalId":507064,"journal":{"name":"Semiconductor Science and Technology","volume":"60 8","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor Science and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/1361-6641/ad4f08","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This study proposes a bipolar resistive random-access memory (RRAM), which is fabricated using an aluminum oxide (AlOx) resistive switching (RS) layer. The RRAM shows a large memory window of 106 at a low read voltage of 0.5 V. In addition, high switching speed, high data retention capability, and superior read-disturb immunity are observed. AlOx layers are prepared by a thermal oxidation growth process. Aluminum metal films deposited on n+-Si wafers are oxidized at O2/(O2+N2) flow rate ratios of 50-100%. Al/AlOx/n+-Si device shows no RS behavior when the AlOx is grown in a pure O2 environment. As the O2/(O2+N2) flow rate ratio decreases to 50%, Al/AlOx:N/n+-Si device reveals stable bipolar RS characteristics. A filamentary mode based on oxygen interstitial and Al vacancy is proposed to explain the difference in electrical characteristics of AlOx devices prepared at different O2 flow rates.