Semiconductor Science and Technology最新文献_第5页

Low-voltage operating, high mobility top-gate structural flexible organic thin-film transistor with a one-step spin-coated binary polymer gate dielectric 采用一步法旋涂二元聚合物栅极电介质的低电压工作、高迁移率顶栅结构柔性有机薄膜晶体管

Semiconductor Science and Technology Pub Date : 2024-02-13 DOI: 10.1088/1361-6641/ad28f6

Jing Su, Zhenxiang Yan, Yijie Lin, W. Xie, Wei Wang

{"title":"Low-voltage operating, high mobility top-gate structural flexible organic thin-film transistor with a one-step spin-coated binary polymer gate dielectric","authors":"Jing Su, Zhenxiang Yan, Yijie Lin, W. Xie, Wei Wang","doi":"10.1088/1361-6641/ad28f6","DOIUrl":"https://doi.org/10.1088/1361-6641/ad28f6","url":null,"abstract":"\u0000 Low-voltage operation is one of the prerequisites for the practical applications of the organic thin-film transistors (OTFTs). Up to date, the most reported low-voltage operatable OTFTs use a bottom-gate structure, and are fabricated by several different technologies in the whole process, in which the organic semiconductors and/or gate dielectrics are prepared in the expensive vacuum equipment. The simple fabricating technologies and fewer processes can better demonstrate the inherent advantages, and enhance the commercial competitiveness of OTFTs. Here, we propose a strategy to fabricate the binary polymers gate dielectric by one-step spin-coating in the top-gate structured flexible OTFTs, by which not only the device performances are prominently improved, but also the fabricating process of the OTFTs is minimized. As a result, the flexible OTFTs exhibit a high mobility over 0.5 cm2/Vs, low threshold voltage near to -0.5 V, and excellent mechanical bending durability with a very slightly performances degradation after the tensile and compressive bending at a small curvature radius of 3.0 mm over 1000 cycles.","PeriodicalId":507064,"journal":{"name":"Semiconductor Science and Technology","volume":"121 10","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139780913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optical, conductive, and ferroelectric properties of the first layer of dip-coated BiFeO3 films from methoxyethanol and acetic acid-based chemical dissolvents 以甲氧基乙醇和乙酸为基础的化学溶解剂浸涂的第一层 BiFeO3 薄膜的光学、导电和铁电特性

Semiconductor Science and Technology Pub Date : 2024-02-13 DOI: 10.1088/1361-6641/ad28f3

C. Diliegros-Godines, F. J. Flores-Ruiz

{"title":"Optical, conductive, and ferroelectric properties of the first layer of dip-coated BiFeO3 films from methoxyethanol and acetic acid-based chemical dissolvents","authors":"C. Diliegros-Godines, F. J. Flores-Ruiz","doi":"10.1088/1361-6641/ad28f3","DOIUrl":"https://doi.org/10.1088/1361-6641/ad28f3","url":null,"abstract":"\u0000 The overall performance of the multilayer resulting in a sol-gel BiFeO3 film will be primarily determined by the properties of the first layer, but this has yet to receive much attention, even though chemical and morphological defects of this layer can accumulate as the number of layers increases. Here, we perform an optical, conductive, and ferroelectric study of first layer (L1) dip-coating sol-gel BiFeO3 films using two routes that vary only in the dissolvent; the first one is based on 2-methoxyethanol (MOE), and the second one on acetic acid (AA) with some MOE (AA-MOE). Tauc plots reveal a band gap of 2.43 eV and 2.75 eV for MOE (30±5 nm thick) and AA-MOE (35±5 nm thick) films, respectively. MOE films showed a dielectric function with features at ~2.5 eV, ~3.1 eV, and ~3.9 eV, which were associated with charge-transfer transitions, but such features are absent in AA-MOE films. Advanced atomic force microscopy (AFM) techniques were used to identify the fine features or defects of the BiFeO3 films: The conductive maps show that the charge transport pathways in both film routes are controlled by nanometer defects rather than grain or grain boundary defects. Current-voltage curves reveal high conductive pathway at a lower voltage for the MOE films than for AA-MOE films. The piezoelectric coefficient for MOE films was ~20% higher than AA-MOE films. Both deposition methods yield ferroelectric films with an electromechanical strain controlled by the piezoelectric effect and minimal contribution from electrostriction. An optimization for the AA-MOE-based route in the withdrawal speed results in a significant reduction of morphological defects and a more than twofold increase in the piezoelectric coefficient. Our results broaden the understanding of optical and ferroelectric BiFeO3 films based on a chemical solution by dip-coating.","PeriodicalId":507064,"journal":{"name":"Semiconductor Science and Technology","volume":"46 17","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139839574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Low-voltage operating, high mobility top-gate structural flexible organic thin-film transistor with a one-step spin-coated binary polymer gate dielectric 采用一步法旋涂二元聚合物栅极电介质的低电压工作、高迁移率顶栅结构柔性有机薄膜晶体管

Semiconductor Science and Technology Pub Date : 2024-02-13 DOI: 10.1088/1361-6641/ad28f6

Jing Su, Zhenxiang Yan, Yijie Lin, W. Xie, Wei Wang

{"title":"Low-voltage operating, high mobility top-gate structural flexible organic thin-film transistor with a one-step spin-coated binary polymer gate dielectric","authors":"Jing Su, Zhenxiang Yan, Yijie Lin, W. Xie, Wei Wang","doi":"10.1088/1361-6641/ad28f6","DOIUrl":"https://doi.org/10.1088/1361-6641/ad28f6","url":null,"abstract":"\u0000 Low-voltage operation is one of the prerequisites for the practical applications of the organic thin-film transistors (OTFTs). Up to date, the most reported low-voltage operatable OTFTs use a bottom-gate structure, and are fabricated by several different technologies in the whole process, in which the organic semiconductors and/or gate dielectrics are prepared in the expensive vacuum equipment. The simple fabricating technologies and fewer processes can better demonstrate the inherent advantages, and enhance the commercial competitiveness of OTFTs. Here, we propose a strategy to fabricate the binary polymers gate dielectric by one-step spin-coating in the top-gate structured flexible OTFTs, by which not only the device performances are prominently improved, but also the fabricating process of the OTFTs is minimized. As a result, the flexible OTFTs exhibit a high mobility over 0.5 cm2/Vs, low threshold voltage near to -0.5 V, and excellent mechanical bending durability with a very slightly performances degradation after the tensile and compressive bending at a small curvature radius of 3.0 mm over 1000 cycles.","PeriodicalId":507064,"journal":{"name":"Semiconductor Science and Technology","volume":"104 ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139840891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Potential design strategy of wide-bandgap semiconductor p-type β-Ga2O3 宽带隙半导体 p 型 β-Ga2O3 的潜在设计策略

Semiconductor Science and Technology Pub Date : 2024-02-13 DOI: 10.1088/1361-6641/ad28f2

XingLin Liu, Jun Huang, Qiangmin Wei, Lei Ye

{"title":"Potential design strategy of wide-bandgap semiconductor p-type β-Ga2O3","authors":"XingLin Liu, Jun Huang, Qiangmin Wei, Lei Ye","doi":"10.1088/1361-6641/ad28f2","DOIUrl":"https://doi.org/10.1088/1361-6641/ad28f2","url":null,"abstract":"\u0000 Wide bandgap semiconductor gallium oxide (β-Ga2O3) has emerged as a prominent material in the field of high-power microelectronics and optoelectronics, due to its excellent and stable performance. However, the lack of high-quality p-type β-Ga2O3 hinders the realization of its full potential. Here, we initially summarize the origins of p-type doping limitation in β-Ga2O3, followed by proposing four potential design strategies to enhance the p-type conductivity of β-Ga2O3. (i) Lowering the formation energy of acceptor impurities to enhance the effective doping concentration. (ii) Reducing the ionization energy of acceptor impurities to increase the concentration of free holes in the valence band maximum (VBM). (iii) Increasing the valence band maximum of β-Ga2O3 to decrease the ionization energy of acceptor impurities. (iv) Intrinsic defect engineering and nanotechnology of β-Ga2O3 to suppress the self-compensation effect of donor impurities. For each strategy, we illustrate the design principles based on fundamental physical theories along with specific examples. From this review, one could learn the p-type doping strategies for β-Ga2O3.","PeriodicalId":507064,"journal":{"name":"Semiconductor Science and Technology","volume":"32 20","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139782076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design and simulation of a nano biosensor based on amorphous indium gallium zinc oxide (a-IGZO) thin film transistor 基于非晶铟镓锌氧化物（a-IGZO）薄膜晶体管的纳米生物传感器的设计与仿真

Semiconductor Science and Technology Pub Date : 2024-02-13 DOI: 10.1088/1361-6641/ad28f4

Z. Ahangari

{"title":"Design and simulation of a nano biosensor based on amorphous indium gallium zinc oxide (a-IGZO) thin film transistor","authors":"Z. Ahangari","doi":"10.1088/1361-6641/ad28f4","DOIUrl":"https://doi.org/10.1088/1361-6641/ad28f4","url":null,"abstract":"\u0000 In this study, a biosensor utilizing a dielectric-modulated Amorphous Indium Gallium Zinc Oxide (a-IGZO) thin film transistor (TFT) is introduced. Thin film transistor biosensors have garnered significant attention due to their heightened sensitivity, scalable nature, low power consumption, rapid electrical detection capabilities, and cost-effective means of mass production. By embedding a nano-cavity within the gate insulator of the TFT, biomolecules can accumulate within. As each biomolecule possesses its own dielectric constant, it modulates the effective gate capacitance and, subsequently, changes the channel conductance. To assess the sensitivity of the biosensor, variation in saturation current after the absorption of biomolecules with respect to the drain current in the case of an air-filled cavity has been considered as a precise measure. The efficient operation of a biosensor is contingent upon the sensitivity being highly dependent on the dielectric constant of the biomolecules that are accumulated within the nano-cavity. Consequently, a comprehensive evaluation has been conducted to ascertain the impact of critical design parameters which have the potential to affect the sensitivity of the biosensor. Additionally, a statistical analysis based on coefficient of variation measure has been performed to evaluate the susceptibility of the biosensor's sensitivity to variations in geometrical and physical design parameters. The utilization of label-free detection methodology in this device presents a notable advantage due to its compatibility with the fundamental CMOS processing technology and its cost-effective potential for macro production.","PeriodicalId":507064,"journal":{"name":"Semiconductor Science and Technology","volume":"133 9","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139780657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Potential design strategy of wide-bandgap semiconductor p-type β-Ga2O3 宽带隙半导体 p 型 β-Ga2O3 的潜在设计策略

Semiconductor Science and Technology Pub Date : 2024-02-13 DOI: 10.1088/1361-6641/ad28f2

XingLin Liu, Jun Huang, Qiangmin Wei, Lei Ye

{"title":"Potential design strategy of wide-bandgap semiconductor p-type β-Ga2O3","authors":"XingLin Liu, Jun Huang, Qiangmin Wei, Lei Ye","doi":"10.1088/1361-6641/ad28f2","DOIUrl":"https://doi.org/10.1088/1361-6641/ad28f2","url":null,"abstract":"\u0000 Wide bandgap semiconductor gallium oxide (β-Ga2O3) has emerged as a prominent material in the field of high-power microelectronics and optoelectronics, due to its excellent and stable performance. However, the lack of high-quality p-type β-Ga2O3 hinders the realization of its full potential. Here, we initially summarize the origins of p-type doping limitation in β-Ga2O3, followed by proposing four potential design strategies to enhance the p-type conductivity of β-Ga2O3. (i) Lowering the formation energy of acceptor impurities to enhance the effective doping concentration. (ii) Reducing the ionization energy of acceptor impurities to increase the concentration of free holes in the valence band maximum (VBM). (iii) Increasing the valence band maximum of β-Ga2O3 to decrease the ionization energy of acceptor impurities. (iv) Intrinsic defect engineering and nanotechnology of β-Ga2O3 to suppress the self-compensation effect of donor impurities. For each strategy, we illustrate the design principles based on fundamental physical theories along with specific examples. From this review, one could learn the p-type doping strategies for β-Ga2O3.","PeriodicalId":507064,"journal":{"name":"Semiconductor Science and Technology","volume":"184 ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139841847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optical, conductive, and ferroelectric properties of the first layer of dip-coated BiFeO3 films from methoxyethanol and acetic acid-based chemical dissolvents 以甲氧基乙醇和乙酸为基础的化学溶解剂浸涂的第一层 BiFeO3 薄膜的光学、导电和铁电特性

Semiconductor Science and Technology Pub Date : 2024-02-13 DOI: 10.1088/1361-6641/ad28f3

C. Diliegros-Godines, F. J. Flores-Ruiz

{"title":"Optical, conductive, and ferroelectric properties of the first layer of dip-coated BiFeO3 films from methoxyethanol and acetic acid-based chemical dissolvents","authors":"C. Diliegros-Godines, F. J. Flores-Ruiz","doi":"10.1088/1361-6641/ad28f3","DOIUrl":"https://doi.org/10.1088/1361-6641/ad28f3","url":null,"abstract":"\u0000 The overall performance of the multilayer resulting in a sol-gel BiFeO3 film will be primarily determined by the properties of the first layer, but this has yet to receive much attention, even though chemical and morphological defects of this layer can accumulate as the number of layers increases. Here, we perform an optical, conductive, and ferroelectric study of first layer (L1) dip-coating sol-gel BiFeO3 films using two routes that vary only in the dissolvent; the first one is based on 2-methoxyethanol (MOE), and the second one on acetic acid (AA) with some MOE (AA-MOE). Tauc plots reveal a band gap of 2.43 eV and 2.75 eV for MOE (30±5 nm thick) and AA-MOE (35±5 nm thick) films, respectively. MOE films showed a dielectric function with features at ~2.5 eV, ~3.1 eV, and ~3.9 eV, which were associated with charge-transfer transitions, but such features are absent in AA-MOE films. Advanced atomic force microscopy (AFM) techniques were used to identify the fine features or defects of the BiFeO3 films: The conductive maps show that the charge transport pathways in both film routes are controlled by nanometer defects rather than grain or grain boundary defects. Current-voltage curves reveal high conductive pathway at a lower voltage for the MOE films than for AA-MOE films. The piezoelectric coefficient for MOE films was ~20% higher than AA-MOE films. Both deposition methods yield ferroelectric films with an electromechanical strain controlled by the piezoelectric effect and minimal contribution from electrostriction. An optimization for the AA-MOE-based route in the withdrawal speed results in a significant reduction of morphological defects and a more than twofold increase in the piezoelectric coefficient. Our results broaden the understanding of optical and ferroelectric BiFeO3 films based on a chemical solution by dip-coating.","PeriodicalId":507064,"journal":{"name":"Semiconductor Science and Technology","volume":"24 2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139779759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Theoretical prediction of a novel hexagonal narrow-gap silicon allotrope under high pressures 高压下新型六方窄隙硅同素异形体的理论预测

Semiconductor Science and Technology Pub Date : 2024-02-13 DOI: 10.1088/1361-6641/ad28f5

Hui min Hu, Jin-Ho Choi

引用次数: 0

Theoretical prediction of a novel hexagonal narrow-gap silicon allotrope under high pressures 高压下新型六方窄隙硅同素异形体的理论预测

Semiconductor Science and Technology Pub Date : 2024-02-13 DOI: 10.1088/1361-6641/ad28f5

Hui min Hu, Jin-Ho Choi

引用次数: 0

Design and simulation of a nano biosensor based on amorphous indium gallium zinc oxide (a-IGZO) thin film transistor 基于非晶铟镓锌氧化物（a-IGZO）薄膜晶体管的纳米生物传感器的设计与仿真

Semiconductor Science and Technology Pub Date : 2024-02-13 DOI: 10.1088/1361-6641/ad28f4

Z. Ahangari

{"title":"Design and simulation of a nano biosensor based on amorphous indium gallium zinc oxide (a-IGZO) thin film transistor","authors":"Z. Ahangari","doi":"10.1088/1361-6641/ad28f4","DOIUrl":"https://doi.org/10.1088/1361-6641/ad28f4","url":null,"abstract":"\u0000 In this study, a biosensor utilizing a dielectric-modulated Amorphous Indium Gallium Zinc Oxide (a-IGZO) thin film transistor (TFT) is introduced. Thin film transistor biosensors have garnered significant attention due to their heightened sensitivity, scalable nature, low power consumption, rapid electrical detection capabilities, and cost-effective means of mass production. By embedding a nano-cavity within the gate insulator of the TFT, biomolecules can accumulate within. As each biomolecule possesses its own dielectric constant, it modulates the effective gate capacitance and, subsequently, changes the channel conductance. To assess the sensitivity of the biosensor, variation in saturation current after the absorption of biomolecules with respect to the drain current in the case of an air-filled cavity has been considered as a precise measure. The efficient operation of a biosensor is contingent upon the sensitivity being highly dependent on the dielectric constant of the biomolecules that are accumulated within the nano-cavity. Consequently, a comprehensive evaluation has been conducted to ascertain the impact of critical design parameters which have the potential to affect the sensitivity of the biosensor. Additionally, a statistical analysis based on coefficient of variation measure has been performed to evaluate the susceptibility of the biosensor's sensitivity to variations in geometrical and physical design parameters. The utilization of label-free detection methodology in this device presents a notable advantage due to its compatibility with the fundamental CMOS processing technology and its cost-effective potential for macro production.","PeriodicalId":507064,"journal":{"name":"Semiconductor Science and Technology","volume":"84 3","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139840609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0