Crystal Research and Technology最新文献_第9页

A Comprehensive Study of Cu/W Double Substitution in Strontium Manganate Ceramics for Some Device Applications 锰酸锶陶瓷中铜/锰双置换在某些设备应用中的综合研究

IF 1.5 4区材料科学

Crystal Research and Technology Pub Date : 2024-04-14 DOI: 10.1002/crat.202300314

Santosh Kumar Parida

{"title":"A Comprehensive Study of Cu/W Double Substitution in Strontium Manganate Ceramics for Some Device Applications","authors":"Santosh Kumar Parida","doi":"10.1002/crat.202300314","DOIUrl":"10.1002/crat.202300314","url":null,"abstract":"In this communication, the synthesis and characterizations of modified strontium manganate (SrCu1/3Mn1/3W1/3O3) (SCMWO) by high-temperature solid-state method are reported. The structural analysis predicts a monoclinic structure with a crystallite size of 36.8 nm. The analysis of the Raman active modes reveals the presence of all the constituent atomic vibrations. The study of the ultraviolet–visible spectrum provides a bandgap energy of 1.71 eV, which may be suitable for photovoltaic applications. A Maxwell-Wanger type of polarization effect is observed at low frequency while low dielectric loss makes the material suitable for energy storage devices. The study of the impedance plots reveals the negative temperature coefficient of resistance (NTCR) character. The activation energy increases with both frequency and temperature in the modified perovskite suggesting that conductivity of the sample increases and material characters are changing from dielectric to semiconducting. The symmetrical curves in the electrical modulus plots and shift toward higher frequency region agree with the results of the non-Debye-type of relaxation mechanism. The semicircular curves in the Cole–Cole plots confirm the semiconducting nature and are also well supported by the results of Nyquist plots. The studied material exhibits a semiconductor nature, which may be found suitable for energy storage device applications.","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 6","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140571341","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Influence of Cerium Oxide Abrasive Particle Morphologies on Polishing Performance 氧化铈磨料颗粒形态对抛光性能的影响

IF 1.5 4区材料科学

Crystal Research and Technology Pub Date : 2024-04-09 DOI: 10.1002/crat.202300308

Zifeng Ni, Qiang Fan, Guomei Chen, Mengjiao Dai, Zongyu Chen, Da Bian, Shanhua Qian

{"title":"Influence of Cerium Oxide Abrasive Particle Morphologies on Polishing Performance","authors":"Zifeng Ni, Qiang Fan, Guomei Chen, Mengjiao Dai, Zongyu Chen, Da Bian, Shanhua Qian","doi":"10.1002/crat.202300308","DOIUrl":"10.1002/crat.202300308","url":null,"abstract":"In this study, two morphologies of cerium oxide (CeO2) abrasive particles, octahedral and spheroidal, are synthesized by solvothermal method using cerium nitrate hexahydrate (Ce(NO3)3-6H2O) as raw material. Fourier infrared spectroscopy, X-ray diffractometer (XRD) and scanning electron microscopy (SEM) are used to characterize the composition and morphology of CeO2 abrasive particles. The synthesized CeO2 is used for chemical mechanical polishing (CMP) of the Si surface of 6H-SiC wafers, and the surface morphology of the polished wafers are observed using atomic force microscopy (AFM). After polishing with octahedral and spheroidal abrasive particles, the surface roughness of the wafers are 0.327 and 0.287 nm, and the material removal rates (MRR) are 870 and 742 nm h−1, respectively. Calculations comparing the ultraviolet absorption spectra and bandgap energies of the two types of abrasive particles as well as molecular dynamics (MD) simulations reveal that the synthesized octahedral CeO2 particles possessed stronger surface chemical activity and material removal performance.","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 6","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140571413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Data-Driven Cz–Si Scale-Up under Conditions of Partial Similarity 部分相似条件下数据驱动的 Cz-Si 规模扩展

IF 1.5 4区材料科学

Crystal Research and Technology Pub Date : 2024-04-09 DOI: 10.1002/crat.202300342

Natasha Dropka, Klaus Böttcher, Gagan Kumar Chappa, Martin Holena

引用次数: 0

Production and Characterization of Electrodeposited Cadmium Sulfide Semiconductor Films with Different Boron Content 不同硼含量的电沉积硫化镉半导体薄膜的制备与表征

IF 1.5 4区材料科学

Crystal Research and Technology Pub Date : 2024-04-09 DOI: 10.1002/crat.202300353

Erman Erdoğan

{"title":"Production and Characterization of Electrodeposited Cadmium Sulfide Semiconductor Films with Different Boron Content","authors":"Erman Erdoğan","doi":"10.1002/crat.202300353","DOIUrl":"10.1002/crat.202300353","url":null,"abstract":"In this study, Cadmium Sulfide (CdS) semiconductor films are electrodeposited on Indium Tin Oxide (ITO) substrates at 80 °C base temperature for different boric acid (H3BO3) ratios. The effect of boric acid on these films is investigated. For this, first of all, the structural change of the films is examined. Among the films obtained with different boric acid ratios, the optimum film is achieved with 0.06 m boric acid doped. From the basic absorption spectra (αhʋ) of the obtained CdS:B films, the variation of hʋ is drawn and it is determined that the CdS:B semiconductor films has a direct band transition. From the basic absorption spectra of the obtained CdS:B films, it is observed that the CdS:B semiconductor films has a direct band transition. In addition, the optical energy bandgap values obtained are in agreement with the values in the available literatures. The results of the structural, optical, and morphological properties of the films produced in this study indicate that among the selected additive ratios, 1% boric acid gives the best and optimum deposition condition. The thin films obtained are also found to be useful as absorber layers in photovoltaic solar cells.","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 6","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140571632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

(Crystal Research and Technology 4/2024) (水晶研究与技术 4/2024）

IF 1.5 4区材料科学

Crystal Research and Technology Pub Date : 2024-04-08 DOI: 10.1002/crat.202470031

引用次数: 0

Mist Chemical Vapor Deposition Using Poorly Soluble Particles as Raw Material 使用溶解性差的颗粒作为原料的雾状化学气相沉积技术

IF 1.5 4区材料科学

Crystal Research and Technology Pub Date : 2024-04-08 DOI: 10.1002/crat.202400011

Yuki Yamazaki, Tsubasa Nakamura, Kodai Kato, Kazuhiko Hara, Tetsuya Kouno

引用次数: 0

Masthead: Crystal Research and Technology 4'2024 刊头：晶体研究与技术 4'2024

IF 1.5 4区材料科学

Crystal Research and Technology Pub Date : 2024-04-08 DOI: 10.1002/crat.202470032

引用次数: 0

Pressure-Induced Effects on BaPbO3: A Prospectively Valuable Material for Piezoelectric Applications via DFT 压力对 BaPbO3 的影响：通过 DFT 研究压电应用中一种有前景价值的材料

IF 1.5 4区材料科学

Crystal Research and Technology Pub Date : 2024-04-08 DOI: 10.1002/crat.202300293

Hussain J. Alathlawi, Saad Tariq, Mawaheb Al-Dossari, A. A. Mubarak, Muhammad Saleem, M. Musa Saad H-E, Mohsin Ali, Bushra Kanwal

{"title":"Pressure-Induced Effects on BaPbO3: A Prospectively Valuable Material for Piezoelectric Applications via DFT","authors":"Hussain J. Alathlawi, Saad Tariq, Mawaheb Al-Dossari, A. A. Mubarak, Muhammad Saleem, M. Musa Saad H-E, Mohsin Ali, Bushra Kanwal","doi":"10.1002/crat.202300293","DOIUrl":"10.1002/crat.202300293","url":null,"abstract":"Employing density functional theory within the Wien2k code, first-principle calculations are conducted to explore the impact of applied pressure up to 80 GPa on the structural, mechanical, thermal, and electronic characteristics of BaPbO3. Demonstrating metallic behavior with ductile attributes, BaPbO3 exhibits a decreasing anisotropic nature under escalating pressure. Evaluation of cubic elastic constants, optimization curves, and enthalpy of formation indicates the compound's mechanical and thermodynamic stability under high pressure conditions. Calculated values of C11 and C44 reflect heightened resistance to unidirectional compression and increased stiffness under pressure. These mechanical properties position BaPbO3 as a promising candidate for diverse industrial applications across varying pressure ranges, including utilization in piezoelectric materials (0–20 GPa) and high-pressure sensors. Additionally, charge density contours suggest a combination of ionic (Ba─Pb) and covalent bonding (Pb─O) within the compound's constituent atoms. The material can exhibit potential applications as a piezoelectric sensor at 0–20 GPa, high-pressure actuators ≈20 GPa, and as a high melting temperature resistive substrate for laser welding and cutting materials.","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 6","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140571655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The Isothermal and Non-Isothermal Growth Behaviors of Ca2Nb2O7 in Molten Slag 熔渣中 Ca2Nb2O7 的等温和非等温生长行为

IF 1.5 4区材料科学

Crystal Research and Technology Pub Date : 2024-04-03 DOI: 10.1002/crat.202300304

Wensheng Han, Mengjie Ran, Chang Chen, Wen Chen

{"title":"The Isothermal and Non-Isothermal Growth Behaviors of Ca2Nb2O7 in Molten Slag","authors":"Wensheng Han, Mengjie Ran, Chang Chen, Wen Chen","doi":"10.1002/crat.202300304","DOIUrl":"10.1002/crat.202300304","url":null,"abstract":"Calcium pyroniobate (Ca2Nb2O7) as a kind of lead-free piezoelectric material has been applied for different fields, but the study of isothermal and non-isothermal growth behaviors of Ca2Nb2O7 in the molten slag is infrequent. In this paper, the in situ thermal analyzer with a single hot thermocouple technique (SHTT) is used to study the growth behaviors of Ca2Nb2O7 in molten slag. In the isothermal temperatures, the Ca2Nb2O7 presents two kinds of growth morphology, including three dimensional (3D) rhombus growth and fibrous one dimensional (1D) growth. The 3D rhombus is grown under the range of 1608 to 1628 K. When the temperature further decreases to 1593 K, the growth behavior of Ca2Nb2O7 becomes fibrous in 1D. Growth velocity affected by the degree of supercooling may account for the phenomenon of two kinds of growth behaviors in different temperatures. In the non-isothermal growth process, the cooling rate over 10 K min−1 contributes to multiple crystal nucleuses growth of Ca2Nb2O7. The cooling rate below 5 K min−1 leads to single nuclear growth. This paper provides a control guideline for Ca2Nb2O7 growth.","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 6","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140571557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigation of the Structural, Mechanical, Electronic, Magnetic, and Thermoelectric Properties of Half Heusler Alloys ZrMnX (X = As, Sb, Te): A DFT-Based Simulation 半 Heusler 合金 ZrMnX（X = As、Sb、Te）的结构、机械、电子、磁性和热电特性研究：基于 DFT 的模拟

IF 1.5 4区材料科学

Crystal Research and Technology Pub Date : 2024-04-01 DOI: 10.1002/crat.202300166

Thamanna Begum Karimullah, Shobana Priyanka D, Srinivasan M, Punithavelan N

{"title":"Investigation of the Structural, Mechanical, Electronic, Magnetic, and Thermoelectric Properties of Half Heusler Alloys ZrMnX (X = As, Sb, Te): A DFT-Based Simulation","authors":"Thamanna Begum Karimullah, Shobana Priyanka D, Srinivasan M, Punithavelan N","doi":"10.1002/crat.202300166","DOIUrl":"10.1002/crat.202300166","url":null,"abstract":"This study investigates the structural, mechanical, electronic, magnetic, and thermoelectric properties of ZrMnX (X = As, Sb, Te) half Heusler alloys using spin-polarized density functional theory (SPDFT) with WIEN2K code using full potential linearized augmented plane wave(FP- LAPW) technique. Results indicate the ferromagnetic phase’s stability over the non-magnetic phase in all three alloys. Band structures and density of states highlight the half-metallic nature of ZrMnX. These alloys exhibit mechanical stability, ductility, and directional properties. Magnetic moments align with the Slater–Pauling rule. Thermoelectric properties, including Seebeck coefficient, electrical and thermal conductivity, and thermoelectric figure of merit, are evaluated using semi-classical Boltzmann theory. The Seebeck coefficient values for ZrMnX (X = As, Sb, Te) are 144.7, 123.3, and −182.6 µV K−1, respectively at 1200 K with corresponding highest figure of merit 1.0, 0.7, and 1.78. These findings suggest the suitability of these alloys for spintronic devices and high-temperature thermoelectric applications due to their observed spin-polarized character and high figure of merit.","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 5","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140571548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0