Crystal Research and Technology最新文献

筛选
英文 中文
Revelation of the Microwave Absorption Properties of Nano-Sized Doubly Substituted Hexagonal Ferrites 揭示纳米级双取代六方铁氧体的微波吸收特性
IF 1.5 4区 材料科学
Crystal Research and Technology Pub Date : 2024-01-27 DOI: 10.1002/crat.202300204
Mishal Idrees, Imran Sadiq, Hasan M. Khan, Farhan Sadiq, Sajjad Hussain, Saira Riaz, Shahzad Naseem
{"title":"Revelation of the Microwave Absorption Properties of Nano-Sized Doubly Substituted Hexagonal Ferrites","authors":"Mishal Idrees,&nbsp;Imran Sadiq,&nbsp;Hasan M. Khan,&nbsp;Farhan Sadiq,&nbsp;Sajjad Hussain,&nbsp;Saira Riaz,&nbsp;Shahzad Naseem","doi":"10.1002/crat.202300204","DOIUrl":"10.1002/crat.202300204","url":null,"abstract":"<p>The main theme of this work is to synthesize and investigate different properties of Pr<sup>3+</sup>-Cu<sup>2+</sup> substituted X-type hexaferrite Sr<sub>2-x</sub>Pr<sub>x</sub>Co<sub>2</sub>Fe<sub>28-y</sub>Cu<sub>y</sub>O<sub>46</sub> with concentration (x = 0, 0.02, 0.06, 0.1 and y = 0, 0.1, 0.3, 0.5) by adopting the sol–gel method. The XRD patterns show the single phase for all the samples. The Pr<sup>3+</sup>-Cu<sup>2+</sup> substitution in pure X-type hexaferrites changes the structural parameters. The increment in dielectric properties with Pr<sup>3+</sup>-Cu<sup>2+</sup> substitution is observed and the patterns show anomalous dielectric behavior. The FTIR analysis also confirms the single phase for the prepared materials. The magnetic properties of the material are enhanced with additives. The difference in saturation magnetization, coercivity, and remanence is observed on the basis of allocated cations onto the different lattice sites. The linear increase in saturation magnetization, remanence, and coercivity make them useful as permanent magnets. The thermal analysis is carried out to know the sintering temperature at which the single X-type phase can be attained. The material exhibits the minimum value of reflection loss (microwave absorption) at higher frequencies that make this material useful to act as microwave absorbing material (MAM) for super high frequency (SHF) devices.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 2","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139579131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Machine Learning Assisted Metal Oxide-Bismuth Oxy Halide Nanocomposite for Electrochemical Sensing of Heavy Metals in Aqueous Media 用于水介质重金属电化学传感的机器学习辅助金属氧化物-卤化铋纳米复合材料
IF 1.5 4区 材料科学
Crystal Research and Technology Pub Date : 2024-01-18 DOI: 10.1002/crat.202300173
Vijayalakshmi Kailasam, Radha Sankararajan, Muthumeenakshi Kailasam, Sreeja Balakrishnapillai Suseela
{"title":"Machine Learning Assisted Metal Oxide-Bismuth Oxy Halide Nanocomposite for Electrochemical Sensing of Heavy Metals in Aqueous Media","authors":"Vijayalakshmi Kailasam,&nbsp;Radha Sankararajan,&nbsp;Muthumeenakshi Kailasam,&nbsp;Sreeja Balakrishnapillai Suseela","doi":"10.1002/crat.202300173","DOIUrl":"10.1002/crat.202300173","url":null,"abstract":"<p>Heavy metal in excess quantity is one of the major inorganic pollutants in water. It causes several hazards to human life and ecosystem. It exists in traces in most of the commonly available drinking water sources from lakes, ponds, wells, etc., However, their presence in treated water is relatively significant. As the treated water is primarily used for agricultural purposes, it is necessary to monitor and measure their concentration. This requires sensing of metals in aqueous medium with good sensitivity and stability. Recently, nanosensors coupled with electrochemical transducer is preferred for analyzing heavy metal in aqueous solutions. In this work, Silver oxide-bismuth oxy bromide coated with nafion is proposed as an electrochemical sensor for detection of heavy metal ions in aqueous solution. Cyclic voltammetry (CV) behavior of the proposed electrode is observed in different electrolytes. Further, Differential Pulse Voltammetry (DPV) study shows that current increases with trace nickel and copper metal ions of different concentration. Further, machine learning (ML) algorithms such as Naïve Bayes, ANN, SVM and decision trees are employed for nickel ions to train the cyclic voltammetry data and evaluate its performance. Naïve Bayes algorithm provides the best accuracy of 93.2% among all the models.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 5","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-01-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139497714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of Frequency and Temperature on Dielectric and Transport Properties of CaO stabilized ZrO2@mullite composites 频率和温度对 CaO 稳定 ZrO2@ 莫来石复合材料介电和传输特性的影响
IF 1.5 4区 材料科学
Crystal Research and Technology Pub Date : 2024-01-18 DOI: 10.1002/crat.202300302
Bijaylaxmi Biswal, Dilip Kumar Mishra
{"title":"Effect of Frequency and Temperature on Dielectric and Transport Properties of CaO stabilized ZrO2@mullite composites","authors":"Bijaylaxmi Biswal,&nbsp;Dilip Kumar Mishra","doi":"10.1002/crat.202300302","DOIUrl":"10.1002/crat.202300302","url":null,"abstract":"<p>This study concerns the synthesis and structure related electrical property analysis of CaO doped ZrO<sub>2</sub>@mullite composites. Two synthesis techniques (solid state reaction route and thermal plasma sintering) are used which results the formation of a composite consisting of mixed phase of orthorhombic mullite, tetragonal and monoclinic zirconia. The lattice parameters, residual strains, average crystallite size and cell volume of these CaO-doped ZrO<sub>2</sub>@mullite composites are obtained from XRD analysis. Stabilization of t-ZrO<sub>2</sub> phase at room temperature is confirmed. Porous microstructure observed in SEM images results in low dielectric constant value of these composites. At room temperature and selected frequency of 1MHz, the dielectric constant and loss factor of 4.7 and 3.826 × 10<sup>−2</sup> is observed for conventional CaO stabilized ZrO<sub>2</sub>@mullite composite and that of 3.8 and 2.19 × 10<sup>−2</sup> is reported for plasma sintered CaO stabilized ZrO<sub>2</sub>@mullite composite. The impedance spectroscopic analysis demonstrates the negative temperature coefficient of resistance (NTCR) behavior and non-Debye type relaxation behavior of both the CaO stabilized ZrO<sub>2</sub>@mullite composites. A negligible effect of electrode polarization is realized in these composites. The electronic band gap of conventional and plasma sintered CaO stabilized ZrO<sub>2</sub>@mullite composites is found to be around 3eV.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 2","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-01-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139497624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Feedback Supersaturation Control Crystallization Process of Itaconic Acid 反馈过饱和控制衣康酸的结晶过程
IF 1.5 4区 材料科学
Crystal Research and Technology Pub Date : 2024-01-09 DOI: 10.1002/crat.202300264
Hongyan Cui, Liangcheng Song, Sheng Lv, Chongqiang Zhu, Chunhui Yang
{"title":"Feedback Supersaturation Control Crystallization Process of Itaconic Acid","authors":"Hongyan Cui,&nbsp;Liangcheng Song,&nbsp;Sheng Lv,&nbsp;Chongqiang Zhu,&nbsp;Chunhui Yang","doi":"10.1002/crat.202300264","DOIUrl":"10.1002/crat.202300264","url":null,"abstract":"<p>Seeding metastable zone of itaconic acid in water is determined using a laser dynamic detecting technique, based on which feedback supersaturation control is performed for the crystallization process. The crystallization is strictly confined within the metastable zone throughout the whole process to effectively inhibit the secondary nucleation and the strategy of seed loading is employed to avoid the burst of primary nucleation, resulting in the uniform particle size distribution. With the aid of solution information, continuous feedback control is conducted to keep the supersaturation at a high level accelerating the crystal growth, which significantly shortens the time consumption, and also the effect of seed amount is discussed in this work.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 2","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139423266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of Influencing Factors on Silicon Epitaxial Growth in Horizontal Single-Wafer Reactor through Orthogonal Test 通过正交试验分析水平单晶片反应器中硅外延生长的影响因素
IF 1.5 4区 材料科学
Crystal Research and Technology Pub Date : 2024-01-09 DOI: 10.1002/crat.202300237
Chaozhong Li, Chengshuai Li, Hang Jiang, Hao Chen, Haisheng Fang
{"title":"Analysis of Influencing Factors on Silicon Epitaxial Growth in Horizontal Single-Wafer Reactor through Orthogonal Test","authors":"Chaozhong Li,&nbsp;Chengshuai Li,&nbsp;Hang Jiang,&nbsp;Hao Chen,&nbsp;Haisheng Fang","doi":"10.1002/crat.202300237","DOIUrl":"10.1002/crat.202300237","url":null,"abstract":"<p>Silicon epitaxy is a crucial process used in semiconductor manufacturing to deposit high-quality films of silicon. This technique is widely used in the production of integrated circuits, as it enables the fabrication of intricate electronic structures with enhanced performance characteristics. This study conducts numerical simulations on a chemical vapor deposition (CVD) reactor to explore the impact of process parameters on the growth rate and non-uniformity of silicon. The investigation encompasses both the gas and surface reactions of the trichlorosilane-hydrogen (TCS-H<sub>2</sub>) system. The distributions of gas flow velocity, temperature, and main components are systematically studied by varying the process parameters, including susceptor temperature, inlet gas velocity, susceptor rotating speed, inlet gas temperature, upper wall temperature, and TCS mole fraction. Furthermore, the orthogonal test method is introduced to assess the effect of all parameters on the growth non-uniformity. The results reveal that the inlet gas velocity and susceptor temperature have a significant influence on the growth rate and non-uniformity. The silicon growth rate is primarily influenced by the TCS mole fraction, whereas the rotation speed of the substrate primarily influences the growth non-uniformity of growth. Finally, the optimal scheme is proposed as valuable guidance for enhancing silicon chemical vapor deposition processes in industrial applications.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 2","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139423691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Refined Synthesis and Single Crystal Growth of PbGa2Se4 by Chemical Vapor Transport Method for Photodetection 利用化学气相传输法精细合成和单晶生长 PbGa2Se4 以用于光电探测
IF 1.5 4区 材料科学
Crystal Research and Technology Pub Date : 2024-01-09 DOI: 10.1002/crat.202300276
Leilei Ji, Bao Xiao, Ziang Yin, Qihao Sun, Yadong Xu, Wanqi Jie
{"title":"Refined Synthesis and Single Crystal Growth of PbGa2Se4 by Chemical Vapor Transport Method for Photodetection","authors":"Leilei Ji,&nbsp;Bao Xiao,&nbsp;Ziang Yin,&nbsp;Qihao Sun,&nbsp;Yadong Xu,&nbsp;Wanqi Jie","doi":"10.1002/crat.202300276","DOIUrl":"10.1002/crat.202300276","url":null,"abstract":"<p>Ternary chalcogenide PbGa<sub>2</sub>Se<sub>4</sub> with high resistivity, photosensitivity, and excellent nonlinear properties, exhibits a potential application in optoelectronic and nonlinear optical devices. However, the preparation of large-sized pure PbGa<sub>2</sub>Se<sub>4</sub> crystals is challenging due to the presence of peritectic reaction <math>\u0000 <semantics>\u0000 <mrow>\u0000 <mi>L</mi>\u0000 <mo>+</mo>\u0000 <mi>α</mi>\u0000 <mrow>\u0000 <mo>(</mo>\u0000 <mrow>\u0000 <mi>G</mi>\u0000 <msub>\u0000 <mi>a</mi>\u0000 <mn>2</mn>\u0000 </msub>\u0000 <mi>S</mi>\u0000 <msub>\u0000 <mi>e</mi>\u0000 <mn>3</mn>\u0000 </msub>\u0000 </mrow>\u0000 <mo>)</mo>\u0000 </mrow>\u0000 <mo>→</mo>\u0000 <mi>P</mi>\u0000 <mi>b</mi>\u0000 <mi>G</mi>\u0000 <msub>\u0000 <mi>a</mi>\u0000 <mn>2</mn>\u0000 </msub>\u0000 <mi>S</mi>\u0000 <msub>\u0000 <mi>e</mi>\u0000 <mn>4</mn>\u0000 </msub>\u0000 </mrow>\u0000 <annotation>${mathrm{L}} + {{alpha}}( {G{a}_2S{e}_3} ) to PbG{a}_2S{e}_4$</annotation>\u0000 </semantics></math> and a narrow homogeneity region. Here, a “quenching-annealing” method (quenching at 850 °C in ice water, and then annealing at 650 °C for 250 h by reheating) is developed to eliminate the PbSe second phase during the synthesis. Subsequently, the PbGa<sub>2</sub>Se<sub>4</sub> single crystals are successfully grown using chemical vapor transport (CVT) with the I<sub>2</sub> as the transport agent. The resulting crystal exhibits the crystal structure belonging to <i>Fddd</i> space group with the lattice parameters of <i>a</i> = 12.7192 Å, <i>b</i> = 21.2831 Å, and <i>c</i> = 21.5226 Å. Additionally, it possesses a wide bandgap (≈2.26 eV), high resistivity (6.59 × 10<sup>12</sup> Ω·cm), and defect density calculated via space charge limited current measurement (SCLC) as 2.46 × 10<sup>11</sup> cm<sup>−3</sup>. Photodetectors based on these as-grown crystals demonstrate exceptional photosensitivity along with a high detectivity (3.2 × 10<sup>8</sup> Jones).</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 2","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139423976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
(Crystal Research and Technology 1/2024) (晶体研究与技术 1/2024)
IF 1.5 4区 材料科学
Crystal Research and Technology Pub Date : 2024-01-08 DOI: 10.1002/crat.202370027
{"title":"(Crystal Research and Technology 1/2024)","authors":"","doi":"10.1002/crat.202370027","DOIUrl":"https://doi.org/10.1002/crat.202370027","url":null,"abstract":"<p>Cover image provided courtesy of Jianguang Zhou, Research Center for Analytical Instrumentation, Institute of Cyber-Systems and Control, State Key Laboratory of Industrial Control Technology, Zhejiang University, China.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/crat.202370027","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139400097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Masthead: Crystal Research and Technology 1'2024 刊头:晶体研究与技术 1'2024
IF 1.5 4区 材料科学
Crystal Research and Technology Pub Date : 2024-01-08 DOI: 10.1002/crat.202370028
{"title":"Masthead: Crystal Research and Technology 1'2024","authors":"","doi":"10.1002/crat.202370028","DOIUrl":"10.1002/crat.202370028","url":null,"abstract":"","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/crat.202370028","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139395366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Molecular Docking and DFT Calculations of Anthracene: Insights from Quantum Chemical Methods 蒽的分子对接和 DFT 计算:量子化学方法的启示
IF 1.5 4区 材料科学
Crystal Research and Technology Pub Date : 2023-12-26 DOI: 10.1002/crat.202300150
Rajendran Vijayakumar, Arangarajan Viji, Karuppaiya Vanasundari, Vadivel Balachandran, Antony Prabhu Arockia Dass
{"title":"Molecular Docking and DFT Calculations of Anthracene: Insights from Quantum Chemical Methods","authors":"Rajendran Vijayakumar,&nbsp;Arangarajan Viji,&nbsp;Karuppaiya Vanasundari,&nbsp;Vadivel Balachandran,&nbsp;Antony Prabhu Arockia Dass","doi":"10.1002/crat.202300150","DOIUrl":"10.1002/crat.202300150","url":null,"abstract":"<p>The molecular structure and spectroscopic data of (2E)-1-(Anthracen-9-yl)-3-(4-nitrophenyl)prop-2-en-1-one are obtained from DFT (B3LYP) with 6-31G(d,p) and 6-31G+(d,p) basis set calculations. The geometry of the molecule is fully optimized, vibrational spectra are calculated and fundamental vibrations are assigned on the basis of potential energy distribution (PED) of the vibrational modes. Molecular parameters such as bond length and bond angle are calculated with the same level of theory. The intramolecular charge transfer is calculated by means of natural bond orbital analysis (NBO). Besides, the molecular electrostatic potential (MEP), HOMO - LUMO, Fukui functions, RDG and ELF are performed. The biological effect is made on the basis of prediction of molecular docking results.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 5","pages":""},"PeriodicalIF":1.5,"publicationDate":"2023-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139051280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermoluminescence Studies of High Energy X-Rays Irradiated Dy3+ Doped Mg0.65Zn0.3Al2O4:0.05Dy Nanophosphor 高能 X 射线辐照 Dy3+ 掺杂 Mg0.65Zn0.3Al2O4:0.05Dy 纳米磷的热致发光研究
IF 1.5 4区 材料科学
Crystal Research and Technology Pub Date : 2023-12-25 DOI: 10.1002/crat.202300223
Pankaj Pathak, Manisha Singh, Pankaj Kumar Mishra, Ajay Mittal, Snehal Jani, Ranjeet Brajpuriya
{"title":"Thermoluminescence Studies of High Energy X-Rays Irradiated Dy3+ Doped Mg0.65Zn0.3Al2O4:0.05Dy Nanophosphor","authors":"Pankaj Pathak,&nbsp;Manisha Singh,&nbsp;Pankaj Kumar Mishra,&nbsp;Ajay Mittal,&nbsp;Snehal Jani,&nbsp;Ranjeet Brajpuriya","doi":"10.1002/crat.202300223","DOIUrl":"10.1002/crat.202300223","url":null,"abstract":"<p>The solution combustion synthesis method is employed to prepare Magnesium,  Zinc, Aluminate doped with dysprosium (Dy<sup>3+</sup>) using the general formula Mg<sub>(1-x-y)</sub> Zn<sub>(y)</sub>Al<sub>2</sub>O<sub>4</sub>:xDy (x = 0.05 and y = 0.3 mol%). From X-ray diffraction studies, the crystal structure belongs to a cubic close-packed spinel structure with space group Fd3ˉm and an average crystallite size is 26.18 nm. In the Fourier transform infrared spectra, the peaks at 683.69 cm<sup>−1</sup>, 503.12 cm<sup>−1</sup> correspond to the AlO<sub>6</sub> groups. The peak temperature (Tm) from the Thermoluminescent glow curve is recorded at 235°C, 237°C, and 235°C, at irradiation doses of 600 Gy, 800 Gy, and 1000 Gy, respectively. The kinetic parameters are evaluated from the thermoluminescent glow curve by calculating the activation energy (E), order of kinetics (b), and frequency factor (s<sup>−1</sup>). Nanophosphor Mg<sub>0.65</sub>Zn<sub>0.3</sub>Al<sub>2</sub>O<sub>4</sub>:0.05Dy shows sub linear dose relationship at doses 600–675 Gy and 925–1000 Gy. Further, at doses between 675 and 925 Gy, it shows a super linear relationship. The optimum activation energy (E) of 0.77–0.82 eV and negligible fading make it suitable for high radiation thermoluminescent dosimetry.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 2","pages":""},"PeriodicalIF":1.5,"publicationDate":"2023-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139036728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信