Crystal Research and Technology最新文献

Issue Information: Crystal Research and Technology 7'2025 发行信息：晶体研究与技术7'2025

IF 1.5 4区材料科学

Crystal Research and Technology Pub Date : 2025-07-10 DOI: 10.1002/crat.70016

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Issue Information: Crystal Research and Technology 6'2025 发行信息：晶体研究与技术6’2025

IF 1.5 4区材料科学

Crystal Research and Technology Pub Date : 2025-06-11 DOI: 10.1002/crat.70007

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Recent Advances in PVT Growth of Large-Diameter, High-Quality Aluminum Nitride Single Crystals 大直径高质量氮化铝单晶PVT生长研究进展

IF 1.5 4区材料科学

Crystal Research and Technology Pub Date : 2025-06-02 DOI: 10.1002/crat.202500038

Wenliang Li, Qianling Liu, Jun Tan, Guangze He, Baikui Li, Zhenhua Sun, Honglei Wu

{"title":"Recent Advances in PVT Growth of Large-Diameter, High-Quality Aluminum Nitride Single Crystals","authors":"Wenliang Li, Qianling Liu, Jun Tan, Guangze He, Baikui Li, Zhenhua Sun, Honglei Wu","doi":"10.1002/crat.202500038","DOIUrl":"https://doi.org/10.1002/crat.202500038","url":null,"abstract":"Aluminum Nitride (AlN), an ultra-wide bandgap semiconductor, boasts a direct bandgap of 6.2 eV, exceptional thermal conductivity (340 W m⁻¹ K⁻¹), and a high breakdown electric field (15.4 MV cm⁻¹), making it highly attractive for deep ultraviolet optoelectronics and high-frequency power applications. Despite these advantages, the industrial deployment of AlN is impeded by the challenges in producing large, defect-controlled single crystals. The Physical Vapor Transport (PVT) method has emerged as a leading technique for fabricating high-quality AlN crystals. This review systematically examines recent technological breakthroughs in PVT-grown AlN, including both homogeneous and heterogeneous substrate strategies, thermal field and stress management, mechanisms of point defect formation, and the integration of simulation techniques for process optimization. Innovations in temperature gradient control, gas-phase composition, seed crystal orientation, and novel crucible designs have enabled the stable growth of 2–4 inch AlN single crystals with markedly reduced impurity levels. Future research should emphasize the integration of multi-scale modeling with experimental validation to surmount existing growth limitations and accelerate the practical application of AlN in advanced electronic devices.","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"60 7","pages":""},"PeriodicalIF":1.5,"publicationDate":"2025-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144598355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Experimental and Computational Investigation of Fluorene Single Crystal for Optoelectronic and Scintillator Applications 荧光单晶用于光电和闪烁体的实验与计算研究

IF 1.5 4区材料科学

Crystal Research and Technology Pub Date : 2025-05-28 DOI: 10.1002/crat.202400261

Saravanan Chandran, Ravikumar Nattudurai, Martin Britto Dhas Sathiyadhas Amalapushpam, Ikhyun Kima, Anitha Kandasamy, Jeyanthinath Mayandi

{"title":"Experimental and Computational Investigation of Fluorene Single Crystal for Optoelectronic and Scintillator Applications","authors":"Saravanan Chandran, Ravikumar Nattudurai, Martin Britto Dhas Sathiyadhas Amalapushpam, Ikhyun Kima, Anitha Kandasamy, Jeyanthinath Mayandi","doi":"10.1002/crat.202400261","DOIUrl":"https://doi.org/10.1002/crat.202400261","url":null,"abstract":"Fluorene (C13H10) single crystals (4 ×3 × 0.5 mm3) were grown via slow evaporation at room temperature to evaluate their potential for organic scintillator applications. Powder X-ray diffraction (PXRD) confirmed an orthorhombic crystal system. Ultravioletvisible (UVVis) spectroscopy showed a 3.7 eV optical band gap, 330 nm cutoff, and 52–70% transmittance. Proton nuclear magnetic resonance (1H NMR) validated aromatic and methylene environments. Thermal analysis (TGA/DTA) revealed stability up to 113 °C, with defined melting and decomposition points. Photoluminescence (PL) exhibited blue emission at 428 nm under 330 nm excitation. Fourier-transform infrared (FTIR) and Raman spectroscopy identified functional groups and vibrational modes. Fluorescence lifetimes measured by time-correlated single photon counting (TCSPC) were 1.1 ns (prompt) and 5.1 ns (delayed), supporting fast response behavior. Density functional theory (DFT) with the B3LYP/6−311G++ basis set and time-dependent DFT (TD-DFT) described the optimized structure, HOMOLUMO gap, electrostatic potential, and excited states. Hirshfeld surface analysis showed dominant H···H interactions (54.3%), indicating efficient packing and energy transfer. Overall, fluorene exhibits desirable optical, thermal, and electronic properties, making it a promising material for organic scintillation detectors.","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"60 7","pages":""},"PeriodicalIF":1.5,"publicationDate":"2025-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144598406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

In Situ Growth of Quantum Dots in Glass Matrices: Novel Paradigms for Advanced Optical Materials 玻璃基质中量子点的原位生长：先进光学材料的新范例

IF 1.5 4区材料科学

Crystal Research and Technology Pub Date : 2025-05-24 DOI: 10.1002/crat.202500030

Xushun Tao, Chengran Zhang, Jiankang Zhou, Guangyong Xu, Zhengtao Deng

{"title":"In Situ Growth of Quantum Dots in Glass Matrices: Novel Paradigms for Advanced Optical Materials","authors":"Xushun Tao, Chengran Zhang, Jiankang Zhou, Guangyong Xu, Zhengtao Deng","doi":"10.1002/crat.202500030","DOIUrl":"https://doi.org/10.1002/crat.202500030","url":null,"abstract":"Quantum dots (QDs) are semiconductor nanocrystals with superior quantum efficiency, narrow emission linewidths, and tunable bandgaps, making them valuable in optoelectronics. However, their commercialization is hindered by instability under stress and environmental concerns related to heavy metal leaching. To address these issues, advanced encapsulation strategies, particularly using inorganic glass matrices (silicate, phosphate, borate), are crucial. This review examines the structure-property relationships between these matrices and QD variants (perovskite, chalcogenide). It highlights how glass host engineering through network modifiers and phase separation control affects QD growth, defect passivation, and stability. Host-guest interactions at the glass-QD interface enhance photoluminescence quantum yield (15–40%), narrow emission linewidths, and improve thermal quenching resistance (30–50% efficiency retention at 150 °C). These advancements enable emerging applications in solid-state lighting, mini-LED backlights, and X-ray detectors. This analysis provides insights into glass-mediated QD engineering and paves the way for eco-friendly photonic materials.","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"60 7","pages":""},"PeriodicalIF":1.5,"publicationDate":"2025-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144598608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thermal Behaviors, Hirshfeld Surface Analysis and Impact of Shock Wave on Glycine Zinc Sulphate Pentahydrate Single Crystal 激波对甘氨酸五水硫酸锌单晶的热行为、赫希菲尔德表面分析及影响

IF 1.5 4区材料科学

Crystal Research and Technology Pub Date : 2025-05-14 DOI: 10.1002/crat.202500016

Kiran, N. Vijayan, N. Sarkar, Vinod, Jyoti, Divyansh Joshi, Chetan

{"title":"Thermal Behaviors, Hirshfeld Surface Analysis and Impact of Shock Wave on Glycine Zinc Sulphate Pentahydrate Single Crystal","authors":"Kiran, N. Vijayan, N. Sarkar,  Vinod,  Jyoti, Divyansh Joshi,  Chetan","doi":"10.1002/crat.202500016","DOIUrl":"https://doi.org/10.1002/crat.202500016","url":null,"abstract":"This article focuses on the growth and analysis of bulk-size glycine zinc sulphate pentahydrate (GZS) single crystal. The structure of the compound is initially analyzed by single-crystal X-ray diffraction. Hirshfeld surface (HS) is analyzed to visualize the distribution of electron density in the GZS crystalline structure. The laser damage threshold (LDT) of GZS is measured using a nanosecond pulsed laser at 1064 nm. Thereafter, the thermal behaviors are examined through thermogravimetric analysis at different heating rates. The activation energy calculations are performed through the Coats-Redfern method. To see the response of GZS crystal under shock wave application, changes in the crystalline quality and optical transmittance are noted. Rocking curve is recorded and FWHM values are calculated to examine the defect behavior due to shock and it is correlated to the transmittance spectra obtained through UV–vis spectroscopy. Bandgap are calculated by Tauc's plot to see the phase stability of the compound under shock wave treatment.","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"60 7","pages":""},"PeriodicalIF":1.5,"publicationDate":"2025-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144598319","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Issue Information: Crystal Research and Technology 5'2025 发行信息：晶体研究与技术5’2025

IF 1.5 4区材料科学

Crystal Research and Technology Pub Date : 2025-05-09 DOI: 10.1002/crat.1585

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Magneto-Optical Kerr Effect and Ultrafast Demagnetization in the Bi, Mn: YIG Films with Perpendicular Magnetic Anisotropy 垂直磁各向异性Bi， Mn: YIG薄膜的磁光Kerr效应和超快退磁

IF 1.5 4区材料科学

Crystal Research and Technology Pub Date : 2025-05-06 DOI: 10.1002/crat.202400223

Wenhao Di, Jiewen Jiang, Jiamin Shang, Liangbi Su, Zhen Zhang, A. Stupakiewicz, A. M. Kalashnikova, Anhua Wu

{"title":"Magneto-Optical Kerr Effect and Ultrafast Demagnetization in the Bi, Mn: YIG Films with Perpendicular Magnetic Anisotropy","authors":"Wenhao Di, Jiewen Jiang, Jiamin Shang, Liangbi Su, Zhen Zhang, A. Stupakiewicz, A. M. Kalashnikova, Anhua Wu","doi":"10.1002/crat.202400223","DOIUrl":"https://doi.org/10.1002/crat.202400223","url":null,"abstract":"The magneto-optical Kerr effect (MOKE) reflects the spin-orbit coupling in magnetic materials, so it can become a fundamentally important tool for studying the electronic structure of materials. Here the MOKE, and the ultrafast demagnetization process is presented for Bi and Mn-doped Y3Fe5O12 films with perpendicular magnetic anisotropy. The structural characterization indicated horizontal dipping has a large growth rate compared to vertical dipping, which will reduce cracks and improve the crystal quality. By analyzing the MOKE signals in different magnetic field directions and comparing them with the theoretical equations, it can be found that the quadratic MOKE values of YIG samples originate from the large perpendicular magnetic anisotropy previously described in YIG samples. Time-resolved MOKE measurements show that with increasing Bi3+ content, the spin-orbit coupling is enhanced, which results in the spin-lattice relaxation time constants becoming smaller, and the magnetization recovery processes are accelerated.","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"60 6","pages":""},"PeriodicalIF":1.5,"publicationDate":"2025-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144256216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Epitaxy and Topotaxy in the Aragonite-Calcite Polymorphism 文石-方解石多晶型的外延和拓扑结构

IF 1.5 4区材料科学

Crystal Research and Technology Pub Date : 2025-05-06 DOI: 10.1002/crat.202400221

D. Aquilano, S. Frisia, S. Ghignone, M. Bruno

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Anisotropic Material Removal Mechanisms and Chemical Mechanical Polishing Performance of Gallium Arsenide Single Crystal Wafers 砷化镓单晶片各向异性材料去除机理及化学机械抛光性能

IF 1.5 4区材料科学

Crystal Research and Technology Pub Date : 2025-04-30 DOI: 10.1002/crat.202400262

Jianguo Cao, Jiashun Yang

{"title":"Anisotropic Material Removal Mechanisms and Chemical Mechanical Polishing Performance of Gallium Arsenide Single Crystal Wafers","authors":"Jianguo Cao, Jiashun Yang","doi":"10.1002/crat.202400262","DOIUrl":"https://doi.org/10.1002/crat.202400262","url":null,"abstract":"Gallium arsenide single crystals are integral to a multitude of applications across aerospace, industrial manufacturing, medical technology, and telecommunications due to their unique anisotropic structural and mechanical properties. Understanding the material removal mechanism of GaAs single crystal wafers is essential for the efficient and reliable processing of these materials. This study delves into the intricacies of the material removal process by conducting a series of gallium arsenide single-crystal scratch experiments using a nanomechanics testing system. The experiments scrutinized different crystal surfaces across various specimens, meticulously documenting the formation of micro/macro scale scratches, the nature of the groove material removal, the depth of the scratches, and the patterns and distribution of cracks. Additionally, the study employs Raman spectrometry to analyze the deformation and phase transition processes of the GaAs crystals. To complement these findings, chemical and mechanical polishing experiments are conducted on GaAs wafers to further explore the material's properties and the behavior of material removal. These comprehensive analyses contribute to a deeper understanding of the processing dynamics of gallium arsenide single crystals, paving the way for advancements in material engineering and device fabrication.","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"60 6","pages":""},"PeriodicalIF":1.5,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144256516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0