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Advancements in Digital Holography for Crystalline Material Characterization: A Review (Invited) 数字全息技术在晶体材料表征中的研究进展(特邀)
IF 1.5 4区 材料科学
Crystal Research and Technology Pub Date : 2025-02-26 DOI: 10.1002/crat.202400264
Wenrui Kang, Zhiyuan Zheng, Haochong Huang
{"title":"Advancements in Digital Holography for Crystalline Material Characterization: A Review (Invited)","authors":"Wenrui Kang,&nbsp;Zhiyuan Zheng,&nbsp;Haochong Huang","doi":"10.1002/crat.202400264","DOIUrl":"https://doi.org/10.1002/crat.202400264","url":null,"abstract":"<p>As an interferometric imaging method, digital holography has shown its unique potential in many fields, especially in the mature and diverse fields of crystallography. Compared to early microscopy imaging and X-ray diffraction approach, this technique captures and accurately reproduces the three-dimensional information of the crystal in real time. It offers advantages such as fast imaging, nondestructive testing, and optimized data processing. This review discusses the progress of digital holography in crystallography, covering crystallization, mineral imaging, and microstructure analysis of two-dimensional materials. The reconstruction of copper sulfate pentahydrate and sodium chloride crystallization serves as an example to demonstrate its powerful ability. Particular emphasis is placed on the advancement of optical instruments and the development of image reconstruction approaches. Regarding the solutions to problems such as dataset processing and field of view limitations, this paper summarizes the research results of combining digital holography with deep learning algorithm models and the free field of view method. In addition, the operating principle of the technology is expounded and the future development direction is also prospected.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"60 4","pages":""},"PeriodicalIF":1.5,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143801437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of Fe Concentration on the Structural, Optical and Biological Properties of ZnMgO Nanoparticles Fe浓度对ZnMgO纳米粒子结构、光学和生物学性质的影响
IF 1.5 4区 材料科学
Crystal Research and Technology Pub Date : 2025-02-23 DOI: 10.1002/crat.202400182
Kenan Senturk, Lutfi Arda
{"title":"Effects of Fe Concentration on the Structural, Optical and Biological Properties of ZnMgO Nanoparticles","authors":"Kenan Senturk,&nbsp;Lutfi Arda","doi":"10.1002/crat.202400182","DOIUrl":"https://doi.org/10.1002/crat.202400182","url":null,"abstract":"<p>ZnO nanoparticles co-doped with Fe and Mg, denoted as Zn<sub>0.99-x</sub>Mg<sub>0.01</sub>Fe<sub>x</sub>O with various compositions (x = 0.00, 0.01, 0.02, 0.03, 0.04, 0.05, and 0.10), are synthesized using the sol–gel method. The structural, morphological, optical, and blood compatibility of these Zn<sub>0.99-x</sub>Mg<sub>0.01</sub>Fe<sub>x</sub>O nanoparticles are investigated. Structural properties are characterized using X-ray diffraction (XRD) while scanning electron microscopy (SEM) is employed to examine the surface morphology. It is determined that all nanoparticles exhibit a single-phase ZnO hexagonal wurtzite structure. SEM images at different magnifications reveal a dense, quasi-spherical, and agglomerated morphology for the (Fe/Mg) co-doped ZnO nanoparticles. The optical properties of the samples are analyzed via a UV spectrophotometer. The energy bandgaps for the nanoparticles are computed and the impact of dopant elements are explored on their optical behavior. The refractive index is determined through five distinct models. Notably, the highest bandgap is observed E<sub>g</sub> = 3.23 eV for Zn₀.₉<sub>8</sub>Mg₀.₀₁Fe₀.₀<sub>1</sub>O and Zn₀.₉<sub>5</sub>Mg₀.₀₁Fe₀.₀<sub>4</sub>O nanoparticles. Hemolysis tests are conducted to evaluate the blood compatibility of these nanoparticles.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"60 4","pages":""},"PeriodicalIF":1.5,"publicationDate":"2025-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143801843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Barium Oxide Thin Films Designed as Electro-Optical Gigahertz/Terahertz Filters 电光千兆赫/太赫兹滤光片设计的氧化钡薄膜
IF 1.5 4区 材料科学
Crystal Research and Technology Pub Date : 2025-02-21 DOI: 10.1002/crat.202400212
Seham R. Alharbi, A. F. Qasrawi, Laila H. Gaabour
{"title":"Barium Oxide Thin Films Designed as Electro-Optical Gigahertz/Terahertz Filters","authors":"Seham R. Alharbi,&nbsp;A. F. Qasrawi,&nbsp;Laila H. Gaabour","doi":"10.1002/crat.202400212","DOIUrl":"https://doi.org/10.1002/crat.202400212","url":null,"abstract":"<p>Herein barium oxide thin films are studied as a promising electro-optical system. The deposited films exhibited a polycrystalline tetragonal structure and are composed of a mixture of BaO and BaO<sub>2</sub>. The <i>p</i>-type films are highly transparent (80%) with an energy band gap of 3.55 eV containing exponential band tails of widths of 1.22 eV. Analyses using the Drude-Lorentz model demonstrated the films suitability for nonlinear optical applications, with optical conductivity parameters revealing a scattering time constant in the range of 0.4–1.8 fs, a free hole concentration of 10<sup>18</sup>−10<sup>19 </sup>cm<sup>−3</sup> and drift mobility values of 0.70–3.16 cm<sup>2</sup> Vs<sup>−1</sup>. Terahertz cutoff frequency spectra calculations indicated the films capability as efficient terahertz band filters with a cutoff frequency range of 3.2–193.0 THz. Additionally, the nonlinear third-order optical susceptibility increased with decreasing incident photon energy. Applying an AC signal with a driving frequency of 0.01–1.40 GHz across the terminals of Yb/BaO/Ag devices revealed a high cutoff frequency (≈9 GHz) in the microwave frequency domain. These properties highlight the potential of BaO films as nonlinear optical filters and microwave waveguides, positioning them as candidates for gigahertz/terahertz technology applications.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"60 4","pages":""},"PeriodicalIF":1.5,"publicationDate":"2025-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143801924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Deuterium Effect on the Morphology of Magnesium Hydroxide Crystallization Process 氘对氢氧化镁结晶过程形貌的影响
IF 1.5 4区 材料科学
Crystal Research and Technology Pub Date : 2025-02-13 DOI: 10.1002/crat.202400242
Tian-Bo Fan, Qiu-Tong Li, Xin’ai Zhang, Li-Qiang Jiao, Hong-Fan Guo, Xue Li
{"title":"Deuterium Effect on the Morphology of Magnesium Hydroxide Crystallization Process","authors":"Tian-Bo Fan,&nbsp;Qiu-Tong Li,&nbsp;Xin’ai Zhang,&nbsp;Li-Qiang Jiao,&nbsp;Hong-Fan Guo,&nbsp;Xue Li","doi":"10.1002/crat.202400242","DOIUrl":"https://doi.org/10.1002/crat.202400242","url":null,"abstract":"<p>This work proposes that a change in deuterium content can affect some physical and chemical properties in water, even a change of only the ppm level, which is called the “deuterium effect”. To illustrate the deuterium effect, morphology and mechanism studies are conducted on the crystallization process of the magnesium hydroxide reaction in water with different deuterium contents. Magnesium hydroxide is synthesized via the ammonia method and hydrothermal method, and the results revealed that the particle size and crystal morphology of magnesium hydroxide prepared in deuterium-depleted water are significantly different from those of magnesium hydroxide prepared in normal water. By determining the solubility of magnesium chloride in water with deuterium content in the range of 40–165 ppm, the effect of deuterium on water activity is demonstrated. As the deuterium content decreased, the trend of the solubility change is the same as that caused by the increase in temperature. The crystallization behavior and growth morphology of magnesium hydroxide are predicted and analyzed at the microscale. The results of this research preliminarily confirmed the existence of the deuterium effect.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"60 3","pages":""},"PeriodicalIF":1.5,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143612507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microstructural Analysis and Optical Linearity and Nonlinearity of Nanostructured Al─Doped ZnO/SnO2 Thin Films 纳米Al掺杂ZnO/SnO2薄膜的微观结构分析及光学线性和非线性
IF 1.5 4区 材料科学
Crystal Research and Technology Pub Date : 2025-02-07 DOI: 10.1002/crat.202400118
Cosmas Muiva, Edigar Muchuweni, Dineo Pono Sebuso, Thabang Kealeboga Matabana, Mosimanegape Thobega, Henry Vasco
{"title":"Microstructural Analysis and Optical Linearity and Nonlinearity of Nanostructured Al─Doped ZnO/SnO2 Thin Films","authors":"Cosmas Muiva,&nbsp;Edigar Muchuweni,&nbsp;Dineo Pono Sebuso,&nbsp;Thabang Kealeboga Matabana,&nbsp;Mosimanegape Thobega,&nbsp;Henry Vasco","doi":"10.1002/crat.202400118","DOIUrl":"https://doi.org/10.1002/crat.202400118","url":null,"abstract":"<p>Al─doped ZnO/SnO<sub>2</sub> (Al─ZnO/SnO<sub>2</sub>) thin films are prepared using spray pyrolysis followed by an investigation of their microstructural and optical properties. Unlike ZnO, Al─doped ZnO (Al─ZnO), SnO<sub>2</sub> and Al─doped SnO<sub>2</sub> (Al─SnO<sub>2</sub>) films, which exhibited polycrystalline structures with distinct peaks, Al─ZnO/SnO<sub>2</sub> films displayed a single sharp peak, indicating strong preferential orientation along the ZnO (100) plane. Scanning electron microscopy revealed spherical aggregates of random polycrystals in ZnO and SnO<sub>2</sub> samples, while Al─ZnO/SnO<sub>2</sub> films have more pores/voids and various nanostructures, including nanorods growing parallel to the substrate. These nanorods provided 1D conductive pathways that closed the open-circuits created by the pores/voids, thereby improving electron transport. The refractive index (<i>n</i>) and extinction coefficient (<i>k</i>) are evaluated using the Cauchy normal dispersion model, and the obtained values are used to determine other linear and nonlinear optical parameters. Al─ZnO/SnO<sub>2</sub> films exhibited low <i>n</i> (≈1.45) and <i>k</i> (≈0) in the visible region, an enhanced band gap (≈3.8 eV), and low Urbach energy (≈84 meV), which minimized light scattering losses, resulting in high visible region transmittance (≈90%). The synergy between high transparency and improved electrical conductivity inferred from the enhanced microstructural and optoelectronic properties makes these films promising candidates for use as transparent conducting electrodes in optoelectronic devices.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"60 3","pages":""},"PeriodicalIF":1.5,"publicationDate":"2025-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143612494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Issue Information: Crystal Research and Technology 2'2025 发行信息:晶体研究与技术2'2025
IF 1.5 4区 材料科学
Crystal Research and Technology Pub Date : 2025-02-06 DOI: 10.1002/crat.202570002
{"title":"Issue Information: Crystal Research and Technology 2'2025","authors":"","doi":"10.1002/crat.202570002","DOIUrl":"https://doi.org/10.1002/crat.202570002","url":null,"abstract":"","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"60 2","pages":""},"PeriodicalIF":1.5,"publicationDate":"2025-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/crat.202570002","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143362651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization, Antibacterial Activity, and Dye Removal Capacity of Green and Hydrothermal Green Synthesized ZnO Nanostructures Using Crataegus Orientalis 山楂绿色和水热绿色合成ZnO纳米结构的表征、抗菌活性和脱色能力
IF 1.5 4区 材料科学
Crystal Research and Technology Pub Date : 2025-01-25 DOI: 10.1002/crat.202400108
Feyza Oke-Altuntas, Halit Altuntas, Selin Saritan, Hakan Colak
{"title":"Characterization, Antibacterial Activity, and Dye Removal Capacity of Green and Hydrothermal Green Synthesized ZnO Nanostructures Using Crataegus Orientalis","authors":"Feyza Oke-Altuntas,&nbsp;Halit Altuntas,&nbsp;Selin Saritan,&nbsp;Hakan Colak","doi":"10.1002/crat.202400108","DOIUrl":"https://doi.org/10.1002/crat.202400108","url":null,"abstract":"<p>In this study, the cost-effective and environmentally friendly green synthesis of zinc oxide (ZnO) nanostructures is reported using <i>Crataegus orientalis</i> fruit extract with green synthesis (GS) and hydrothermal-assisted green synthesis (HTGS) methods. The optical, structural, and morphological characteristics of the synthesized ZnO nanostructures are examined by UV–vis Spectroscopy (UV–vis), X-ray diffraction (XRD), and field emission scanning electron microscopy (FE-SEM) supported with energy dispersive X-ray spectroscopy (EDX). XRD patterns confirmed that the synthesized ZnO nanostructures have a hexagonal single phase. The average crystallite size and optical bandgap values are obtained as 31 and 27 nm, 2.8 and 3.02 eV, for GS-ZnO and HTGS-ZnO nanostructures, respectively. The synthesized HTGS-ZnO and GS-ZnO nanostructures are used as a catalyst in the photodegradation of methylene blue (MB) dye and show excellent degradation activity of 99% after 120 min of UV illumination. In addition, it is found that HTGS-ZnO and GS-ZnO nanostructures have a higher antibacterial effect against <i>Staphylococcus aureus</i> ATCC 25923 than ZnO nanostructures synthesized by chemical methods. Moreover, since both synthesis methods show similar results, the GS method, which is lower cost, simpler, and less time-consuming than the HTGS technique, can be recommended to synthesize ZnO nanostructures using <i>Crataegus orientalis</i>.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"60 3","pages":""},"PeriodicalIF":1.5,"publicationDate":"2025-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143612394","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Evolutions of Both Temperature Field and Convection Field During GaInSb THM and VB Crystal Growths and Influences of Temperature Gradient GaInSb THM和VB晶体生长过程中温度场和对流场的演变及温度梯度的影响
IF 1.5 4区 材料科学
Crystal Research and Technology Pub Date : 2025-01-23 DOI: 10.1002/crat.202400202
Pei Wang, Bowen Wang, Leran Zhao, Ming Liu, Jian Liu, Xinhu Zhang, Juncheng Liu
{"title":"Evolutions of Both Temperature Field and Convection Field During GaInSb THM and VB Crystal Growths and Influences of Temperature Gradient","authors":"Pei Wang,&nbsp;Bowen Wang,&nbsp;Leran Zhao,&nbsp;Ming Liu,&nbsp;Jian Liu,&nbsp;Xinhu Zhang,&nbsp;Juncheng Liu","doi":"10.1002/crat.202400202","DOIUrl":"https://doi.org/10.1002/crat.202400202","url":null,"abstract":"<p>III-V semiconductor compound crystals are widely used in the advanced infrared detectors and lasers etc. The traveling heater method (THM) and the vertical Bridgman method (VB) are two important methods to grow high-quality, especially low dislocation density bulk single crystals, in which the furnace temperature gradient <i>G</i><sub>TH</sub>, usually plays a key role determining the dislocation density. This work simulates numerically GaInSb crystal growths with both THM and VB, displaying the evolutions of both the temperature field inside the crucible domain and the flow field in the melt in detail, investigating the influences of <i>G</i><sub>TH</sub> on the temperature and the flow fields, especially on the temperature gradient at the front of crystal growth interface and its shape. The results show that both of them are more dependent on <i>G</i><sub>TH</sub> during THM crystal growth than during VB one. Furthermore, this work focuses on the impact of the mushy zone in the front of growth interface during the ternary compounds’ crystal growth, which has been almost always ignored in the previous numerical simulation works.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"60 3","pages":""},"PeriodicalIF":1.5,"publicationDate":"2025-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143612432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Seeded Growth and Scintillation Properties of Cs3Cu2I5 Perovskite Crystals by the Vertical Bridgman Method 垂直布里奇曼法研究Cs3Cu2I5钙钛矿晶体的种子生长和闪烁特性
IF 1.5 4区 材料科学
Crystal Research and Technology Pub Date : 2025-01-23 DOI: 10.1002/crat.202400224
Yankai Gu, Yongsheng Liu, Yang Li, Yexi Huang, Hui Shen, Jiayue Xu
{"title":"Seeded Growth and Scintillation Properties of Cs3Cu2I5 Perovskite Crystals by the Vertical Bridgman Method","authors":"Yankai Gu,&nbsp;Yongsheng Liu,&nbsp;Yang Li,&nbsp;Yexi Huang,&nbsp;Hui Shen,&nbsp;Jiayue Xu","doi":"10.1002/crat.202400224","DOIUrl":"https://doi.org/10.1002/crat.202400224","url":null,"abstract":"<p>Copper halide perovskite Cs<sub>3</sub>Cu<sub>2</sub>I<sub>5</sub> has attracted great interest due to its excellent scintillation properties, while it is rather challenging to grow large-size bulk crystals. Herein, the seeded growth of Cs<sub>3</sub>Cu<sub>2</sub>I<sub>5</sub> crystals are investigated by the vertical Bridgman method. Initially, Cs<sub>3</sub>Cu<sub>2</sub>I<sub>5</sub> crystal is grown by spontaneous nucleation in a sealed quartz tube. Some Cs<sub>3</sub>Cu<sub>2</sub>I<sub>5</sub> grains are processed into cylinders for the following seeded growth. Black Cs<sub>3</sub>Cu<sub>2</sub>I<sub>5</sub> bulk crystal is obtained from the Pt crucible with a seed well in the air, with a dimension of Φ25 mm × 60mm and a &lt;131&gt; preferred growth orientation. The existence of I<sub>2</sub> is possibly contributed to the crystal blackening. Using isodiametric seed, transparent Cs<sub>3</sub>Cu<sub>2</sub>I<sub>5</sub> crystal wafers with dimensions over 20 mm are successfully grown under vacuum. The absorption edge of the Cs<sub>3</sub>Cu<sub>2</sub>I<sub>5</sub> crystal is located at ≈330 nm. The photoluminescence of the crystal is centered at 445 nm, featuring a primary decay time of 850.88 ns (83.76%). It displays a significant light yield of 37,000 photons per MeV and an energy resolution of 5.1% at 662 keV, when subjected to γ-ray radiation. The results reveal the feasibility of seeded growth of Cs<sub>3</sub>Cu<sub>2</sub>I<sub>5</sub> crystals for potential scintillation applications.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"60 3","pages":""},"PeriodicalIF":1.5,"publicationDate":"2025-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143612598","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Research of In0.48Ga0.52P/GaAs Heterojunction Interface Properties Improvement Deposited by MOCVD MOCVD沉积改善in0.48 ga0.52 /GaAs异质结界面性能的研究
IF 1.5 4区 材料科学
Crystal Research and Technology Pub Date : 2025-01-23 DOI: 10.1002/crat.202400198
Dayang Yu, Junjie Qiu, Kang Liang, Yicang Huang, Wei Shen
{"title":"Research of In0.48Ga0.52P/GaAs Heterojunction Interface Properties Improvement Deposited by MOCVD","authors":"Dayang Yu,&nbsp;Junjie Qiu,&nbsp;Kang Liang,&nbsp;Yicang Huang,&nbsp;Wei Shen","doi":"10.1002/crat.202400198","DOIUrl":"https://doi.org/10.1002/crat.202400198","url":null,"abstract":"<p>InGaP/GaAs heterojunction layers are commonly used as semiconductor materials in GaAs solar cells. Nevertheless, challenges endure in the form of poor quality InGaP/GaAs heterojunctions. This is attributed to the diffusion of P atoms caused by the memory effect in the GaAs absorption layer, as well as the As/P exchange and H<sub>2</sub> etching effect in the InGaP window layer. In this work, the residual group-V source evacuation (RSE) and stabilizing method have been utilized to InGaP/GaAs heterojunction interface quality, and these effects have been investigated. The variation of process gas concentrations in metal–organic chemical vapor deposition (MOCVD) reactor is numerically studied as an indicator of H<sub>2</sub> etching and As/P exchange. Optimization of stabilizing and RSE period times is found to be necessary in order to achieve high-quality heterojunction, balancing the memory effect, etching effect, As/P exchange effect, and GaAs crystal quality. When the RSE and stabilizing period times are both set to 0.5 s, it is observed that the photo luminescence (PL) performance of InGaP/GaAs reached its optimal level. These studies have great significance to the fabrication of InGaP/GaAs heterojunction-based GaAs solar cell, which promotes the further development of multi-junction and high photovoltaic conversion efficiency (PCE) solar applications.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"60 3","pages":""},"PeriodicalIF":1.5,"publicationDate":"2025-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143612597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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