Elimination of Edge Defects in SiC Crystals Grown Through Physical Vapor Transport Method

IF 1.9 4区材料科学 Q3 Chemistry

Crystal Research and Technology Pub Date : 2025-04-21 DOI:10.1002/crat.202500028

Jingcheng Feng, Hao Xue, Gang Dong, Yujian Wang, Chengyuan Sun, Yunfei Shang, Zuotao Lei, Dalei Meng, Chunhui Yang, Yingmin Wang

引用次数: 0

Abstract

Silicon carbide (SiC) has important application prospects in power and radio frequency devices. Obtaining SiC crystals with large diameters and high quality is still a challenge. In this work, the temperature field during SiC crystal growth is investigated through the physical vapor transport (PVT) method. Based on the numerical simulated results, an improved growing system is designed and perfect SiC crystals without any edge defects are successfully obtained. Furthermore, the X-ray rocking curve, electrical resistivity, and dislocation density of the obtaining SiC crystals are evaluated.

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物理气相输运法生长SiC晶体边缘缺陷的消除

碳化硅在功率器件和射频器件中具有重要的应用前景。获得大直径、高质量的碳化硅晶体仍然是一个挑战。本文采用物理气相输运（PVT）方法研究了碳化硅晶体生长过程中的温度场。基于数值模拟结果，设计了一种改进的生长系统，成功地获得了无边缘缺陷的完美SiC晶体。此外，还评估了所得SiC晶体的x射线摇摆曲线、电阻率和位错密度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Crystal Research and Technology CRYSTALLOGRAPHY-

CiteScore

2.50

自引率

6.70%

发文量

121

审稿时长

1.9 months

期刊介绍： The journal Crystal Research and Technology is a pure online Journal (since 2012). Crystal Research and Technology is an international journal examining all aspects of research within experimental, industrial, and theoretical crystallography. The journal covers the relevant aspects of -crystal growth techniques and phenomena (including bulk growth, thin films) -modern crystalline materials (e.g. smart materials, nanocrystals, quasicrystals, liquid crystals) -industrial crystallisation -application of crystals in materials science, electronics, data storage, and optics -experimental, simulation and theoretical studies of the structural properties of crystals -crystallographic computing