从实验电荷密度分析探索倍半氧化物(M2O3, M = in, Y, Al)中的中间键相互作用

IF 1.9 4区 材料科学 Q3 Chemistry
Kanaga Sabapathy Sujatha, Samuel Israel, Chellam Anzline, Rajan Arul Jebamani Raja Sheeba, Ponnuvelu Richard Rajkumar
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引用次数: 0

摘要

利用最大熵法(MEM)和多极电荷密度模型,通过精确的实验电荷密度分布研究了倍半氧化物的成键特性。研究了电荷密度的拓扑结构,并通过研究(3,-1)键临界点,很好地记录了原子在不同对称下产生不同键特性和振动的情况。相互作用的中间性质在系统中是显而易见的,并且是映射的。在研究过程中,也有证据表明,随着二元氧化物中金属阳离子氧化态的增加,键合的闭壳相互作用特征增加。对Y2O3的热振动参数和中键区电荷密度的观察表明,Y2O3的晶格比Al2O3和In2O3更具刚性和共价性。电荷积分研究探索了In2O3的高离子导电性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Exploring Intermediate Bonding Interactions in Sesquioxides (M2O3, M = In, Y, Al) From Experimental Charge Density Analysis

Exploring Intermediate Bonding Interactions in Sesquioxides (M2O3, M = In, Y, Al) From Experimental Charge Density Analysis

The bonding features of sesquioxides have been thoroughly investigated by precise experimental charge density distribution using the Maximum Entropy Method (MEM) and multipole models of charge density. The topology of the charge density is investigated and the atoms enacting different bonding characteristics and vibrations at different symmetries are well documented by studying (3,-1) bond critical points. The intermediate nature of interactions are visibly evident in the systems and are mapped. In the course of study, evidences of an increase in closed-shell interaction characteristics of bonding with the increase in the oxidation state of the metal cations in binary oxides are also witnessed. Thermal vibration parameters and charge density at the mid-bond regions, observed in the compound Y2O3, shows that its lattice is more rigid and has more covalent character than Al2O3 and In2O3. The charge integration studies explored the high ionic conductivity nature of In2O3.

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来源期刊
CiteScore
2.50
自引率
6.70%
发文量
121
审稿时长
1.9 months
期刊介绍: The journal Crystal Research and Technology is a pure online Journal (since 2012). Crystal Research and Technology is an international journal examining all aspects of research within experimental, industrial, and theoretical crystallography. The journal covers the relevant aspects of -crystal growth techniques and phenomena (including bulk growth, thin films) -modern crystalline materials (e.g. smart materials, nanocrystals, quasicrystals, liquid crystals) -industrial crystallisation -application of crystals in materials science, electronics, data storage, and optics -experimental, simulation and theoretical studies of the structural properties of crystals -crystallographic computing
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