Crystal Research and Technology最新文献_第6页

Issue Information: Crystal Research and Technology 9'2024 发行信息：晶体研究与技术 9'2024

IF 1.5 4区材料科学

Crystal Research and Technology Pub Date : 2024-09-09 DOI: 10.1002/crat.202470041

引用次数: 0

Morphology-Controlled Synthesis of Hierarchical Copper Hydroxyphosphate Microcrystals in Alkaline Buffer Solution and their Optical Properties 碱性缓冲溶液中分层羟基磷酸铜微晶的形态控制合成及其光学特性

IF 1.5 4区材料科学

Crystal Research and Technology Pub Date : 2024-09-08 DOI: 10.1002/crat.202400120

Yiyang Zhao, Hao Chen, Gaogao Li, Yonghui Shao, Xiaodi Liu

引用次数: 0

Study on the Plastic Deformation Mechanism of Void-Containing Twin-Crystal Magnesium with Symmetric Tilt Grain Boundary Angles 具有对称倾斜晶界角的含空隙双晶镁的塑性变形机理研究

IF 1.5 4区材料科学

Crystal Research and Technology Pub Date : 2024-08-23 DOI: 10.1002/crat.202400119

Qin Li, Junping Yao, Zhichen Wu, Buwei Li, Guoxing Chen, Lanmin Zhou

{"title":"Study on the Plastic Deformation Mechanism of Void-Containing Twin-Crystal Magnesium with Symmetric Tilt Grain Boundary Angles","authors":"Qin Li, Junping Yao, Zhichen Wu, Buwei Li, Guoxing Chen, Lanmin Zhou","doi":"10.1002/crat.202400119","DOIUrl":"https://doi.org/10.1002/crat.202400119","url":null,"abstract":"A twin-crystal magnesium (Mg) model with 9 different symmetric tilt grain boundary (STGB) angles (20°–80°) with preset nanohole defects is established by atomsk and lammps software. The mechanical behavior of grain boundary (GB) angles on twin-crystal Mg with cavity defects and its cavity evolution are simulated by the molecular dynamics method with embedded atomic potential, and the plastic deformation mechanism is revealed. The results show that the yield stress decreases with the increase of the STGB Angle during the stretching process. When the GB Angle increases from 20° to 80°, the yield stress decreases from 2.28 to 1.42 Gpa. This is because the larger the STGB Angle is, the larger the Schmidt factor is, and the easier it is to start dislocation slip during the stretching process. On the other hand, the larger the Angle of STGB, the more the number of atomic voids at the interface, and the more the number of dislocation nucleation points. The larger the Angle of STGB, the lower the strength of twinning Mg but the better the plasticity to avoid fracture. The plastic deformation mechanism mainly includes the nucleation of Shockley incomplete dislocation at STGBs, dislocation slip generates stacking faults (SFs), GB migration, and base plane dislocations.","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 9","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142165727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Revolutionizing Construction: Harnessing Phosphorus Tailings for Lightweight, High-Strength Wall Materials 建筑业的变革：利用磷尾矿制造轻质高强度墙体材料

IF 1.5 4区材料科学

Crystal Research and Technology Pub Date : 2024-08-23 DOI: 10.1002/crat.202400094

Haiyang Wang, Hao Zhang, Hong Cao, Jun Xue, Arramel, Jing Zou, Jizhou Jiang

{"title":"Revolutionizing Construction: Harnessing Phosphorus Tailings for Lightweight, High-Strength Wall Materials","authors":"Haiyang Wang, Hao Zhang, Hong Cao, Jun Xue,  Arramel, Jing Zou, Jizhou Jiang","doi":"10.1002/crat.202400094","DOIUrl":"https://doi.org/10.1002/crat.202400094","url":null,"abstract":"The beneficiation of low-grade phosphate ore leads to the production of a substantial quantity of phosphate tailings, thereby not only occupying land but also endangering the environment and potentially posing safety concerns. In this work, extrusion molding, steam-curing, and calcined phosphate tailings are employed to fabricate lightweight wall materials with superior strength. It is found that the wall material has a special structure of interwoven needle-like crystals as a way to provide high flexural strength. The main composition of 34.94% phosphate tailings, 36.75% calcined phosphate tailings, 16.64% silica fume, 6.67% anhydrous magnesium sulfate is required to achieve an optimal maintenance process for 4 h of heat preservation at 120 °C saturated vapor pressure environment. The prepared wall materials yield a flexural strength of 24.9 MPa, compressive strength of 18.9 MPa, softening coefficient of 0.81, apparent density of 1.594 g cm−3, and thermal conductivity of 0.269 w/(m K), which meet the requirements of the Chinese standard “Lightweight strip board for building partition walls”. Moreover, the calculation revealed that phosphate tailings have a comprehensive utilization rate of 77.23%, effectively mitigating the issues arising from their accumulation and serving as an efficient means of utilizing solid waste derived from phosphate tailings.","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 9","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142165728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Adhesion, Stability and Electronic Properties of Ag/SnO2 Interface from First-Principles Calculation 从第一原理计算看 Ag/SnO2 界面的粘附性、稳定性和电子特性

IF 1.5 4区材料科学

Crystal Research and Technology Pub Date : 2024-08-21 DOI: 10.1002/crat.202400126

Yunhui Xu, Jintao Li, Wensong Teng, Defeng Cui, Xiaolong Zhou

{"title":"Adhesion, Stability and Electronic Properties of Ag/SnO2 Interface from First-Principles Calculation","authors":"Yunhui Xu, Jintao Li, Wensong Teng, Defeng Cui, Xiaolong Zhou","doi":"10.1002/crat.202400126","DOIUrl":"10.1002/crat.202400126","url":null,"abstract":"The interfacial bonding state between each oxide and the silver matrix in AgCuOIn2O3SnO2 electrical contact materials remains unclear. To address this, first-principles calculations using density-functional theory are employed to establish the low-index surfaces of Ag and SnO2 and perform convergence tests. Computational results reveal that the Ag (111) surface and the SnO2(110)-O surface exhibit the highest stability among their respective low-index surfaces. Consequently, these surfaces are chosen to form the interfacial model, and their atomic structure, adhesion work, and interfacial energies are systematically analyzed. The results demonstrate that the stability and interfacial bonding strength of the Ag(111)/SnO2(110)-O interface are high, exhibiting metallic properties and strong conductivity. Moreover, at an interface spacing of d0 = 2.4 Å, the interface stability is optimal. The redistribution of charge at the interface induces significant changes in the local atomic density of states, particularly noticeable in the Ag and O atoms. Additionally, the Ag/SnO2 interface is predominantly bonded through ionic interactions, contributing to its robust bonding.","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 11","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142183597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Determination of Thermal Properties of Carbon Materials above 2000 °C for Application in High Temperature Crystal Growth 测定 2000 °C 以上碳材料的热性能，以应用于高温晶体生长

IF 1.5 4区材料科学

Crystal Research and Technology Pub Date : 2024-08-07 DOI: 10.1002/crat.202400080

Jonas Ihle, Peter J. Wellmann

引用次数: 0

High Broadband Optical Absorption and Bandstop Filter Characteristics of Pb/Nb2O5 Interfaces Pb/Nb2O5 界面的高宽带光吸收和带阻滤波器特性

IF 1.5 4区材料科学

Crystal Research and Technology Pub Date : 2024-08-06 DOI: 10.1002/crat.202400136

Sabah. E. Algarni, Atef F. Qasrawi, Najla. M. Khusayfan

{"title":"High Broadband Optical Absorption and Bandstop Filter Characteristics of Pb/Nb2O5 Interfaces","authors":"Sabah. E. Algarni, Atef F. Qasrawi, Najla. M. Khusayfan","doi":"10.1002/crat.202400136","DOIUrl":"10.1002/crat.202400136","url":null,"abstract":"In this study, semitransparent lead films serve as substrates for depositing niobium pentoxide thin films, forming versatile electro-optical devices. Using vacuum evaporation and ion sputtering techniques at ≈10−5 mbar, stacked layers of crystalline Pb and amorphous Nb2O5 are created. This process reduces free carrier absorption in Nb2O5 and forms Urbach tail states with a width of 0.91 eV. Pb/Nb2O5 thin films exhibit remarkable broadband absorption, exceeding 440% in the visible and 98% in the infrared. Moreover, Pb substrates induce a redshift in Nb2O5’s energy bandgap. Electrical analysis using impedance spectroscopy on Pb/Nb2O5/Ag structures reveals their series/parallel resonance and bandstop filter properties. Notably, the bandstop filters exhibit reflection coefficient minima at a notch frequency of 1.66 GHz, with a bandwidth of 280 MHz, return loss of 26 dB, and voltage standing wave ratio of 1.13. These findings underscore the device's potential for wide-ranging electro-optical applications across the electromagnetic spectrum.","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 9","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141947251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

(Crystal Research and Technology 8/2024) (水晶研究与技术 8/2024）

IF 1.5 4区材料科学

Crystal Research and Technology Pub Date : 2024-08-03 DOI: 10.1002/crat.202470039

引用次数: 0

Crystallization Behavior of Co-Doped Amorphous Manganese Dioxide and Its Cathode Performance for Aqueous Zinc Ion Batteries 共掺杂无定形二氧化锰的结晶行为及其在锌离子水电池中的阴极性能

IF 1.5 4区材料科学

Crystal Research and Technology Pub Date : 2024-08-03 DOI: 10.1002/crat.202400029

Yana Liu, Fangxia Zhao, Haoyi Chen, Xingfeng Tang, Zhenzhong Zhang, Chengyang Gu, Hong Chang

{"title":"Crystallization Behavior of Co-Doped Amorphous Manganese Dioxide and Its Cathode Performance for Aqueous Zinc Ion Batteries","authors":"Yana Liu, Fangxia Zhao, Haoyi Chen, Xingfeng Tang, Zhenzhong Zhang, Chengyang Gu, Hong Chang","doi":"10.1002/crat.202400029","DOIUrl":"10.1002/crat.202400029","url":null,"abstract":"In order to explore the crystallization behavior of Co-doped amorphous manganese dioxide(Co-doped AMO) and to investigate the electrochemical properties of its different crystallization products as cathodes for aqueous zinc ion batteries. In this work, the effects of heat treatment temperature on the microstructure and phase composition of Co-doped AMO and their electrochemical properties of Zn-MnO2 battery cathode materials are systematically investigated. The results show that Co-doping increases the crystallization temperature of pure AMO. When the heat treatment temperature is 400 °C, Co-doped AMO is amorphous. At 500 and 550 °C, part of the Co-doped AMO crystallizes into tetragonal spinel structured (Co, Mn)(Co, Mn)2O4 material between MnCo2O4 and Mn3O4. At 650 °C, the crystallized product is completely nano-α-Mn(Co)O2 crystal. The maximum discharge specific capacities and the retention rate after 100 cycles of the samples at 100 mA g−1 are 325.40 mAh g−1, 86.88%; 217.00 mAh g−1, 13.94%; 186.68 mAh g−1, 41.01%; and 149.03 mAh g−1, 31.27% for the unheated and 400, 550, 650 °C heat-treated samples, respectively. It is proved that the Co-doped AMO without heat treatment is superior to the partially or fully crystallized materials in terms of comprehensive performance and cost as cathode materials for AZIB.","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 9","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141947256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Masthead: Crystal Research and Technology 8'2024 刊头：水晶研究与技术 8'2024

IF 1.5 4区材料科学

Crystal Research and Technology Pub Date : 2024-08-03 DOI: 10.1002/crat.202470040

引用次数: 0