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1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)最新文献

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Highly integrated MMIC upconverters/drivers for cellular and PCS CDMA handsets 高度集成的MMIC上转换器/驱动，用于蜂窝和PCS CDMA手机
1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1999-06-13 DOI: 10.1109/RFIC.1999.805243
K. Harrington, B. McNamara, M. Murphy, B. Khabbaz, M. Hafizi, F. Ali, C. Wakeham, R. Moazzam
{"title":"Highly integrated MMIC upconverters/drivers for cellular and PCS CDMA handsets","authors":"K. Harrington, B. McNamara, M. Murphy, B. Khabbaz, M. Hafizi, F. Ali, C. Wakeham, R. Moazzam","doi":"10.1109/RFIC.1999.805243","DOIUrl":"https://doi.org/10.1109/RFIC.1999.805243","url":null,"abstract":"A highly integrated GaAs MMIC upconverter chipset for a dual band CDMA handset is introduced. The chipset consists of two multi-function ICs that operate in the 800 MHz (cellular) and 1900 MHz (PCS) frequency bands. Each chip provides over 20 dB of variable gain control while maintaining the strict linearity requirements of IS-98 and J-STD-018. Both ICs are plastic packaged to achieve low cost and are designed to operate off a regulated 2.7 V supply.","PeriodicalId":447109,"journal":{"name":"1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126024105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A true enhancement mode device technology suitable for dual mode dual band power amplifier applications 一种真正的增强模式器件技术，适用于双模双频功率放大器应用
1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1999-06-13 DOI: 10.1109/RFIC.1999.805255
E. Glass, J. Huang, M. Martinez, W. Peatman, O. Hartin, W. Valentine, M. LaBelle, J. Costa, K. Johnson
{"title":"A true enhancement mode device technology suitable for dual mode dual band power amplifier applications","authors":"E. Glass, J. Huang, M. Martinez, W. Peatman, O. Hartin, W. Valentine, M. LaBelle, J. Costa, K. Johnson","doi":"10.1109/RFIC.1999.805255","DOIUrl":"https://doi.org/10.1109/RFIC.1999.805255","url":null,"abstract":"We have developed a true enhancement mode AlGaAs/InGaAs heterostructure insulated-gate FET technology that combines single supply operation with state-of-the-art linearity and efficiency performance for both digital and analog portable communications. The measured linearity and efficiency performance of this technology rivals or surpasses the results achieved by PHEMT and HBT devices reported to date. For the NADC modulation format at 1800 MHz and VDS=3.6 V, a power-added efficiency of 50% has been achieved at +30.6 dBm output power, -30 dBc adjacent channel power and -49 dBc alternate channel power.","PeriodicalId":447109,"journal":{"name":"1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129042223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
A high gain, low power MMIC LNA for Ka-band using InP HEMTs 一种采用InP hemt的ka波段高增益、低功耗MMIC LNA
1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1999-06-13 DOI: 10.1109/RFIC.1999.805258
C. Pobanz, M. Matloubian, L. Nguyen, M. Case, Ming Hu, M. Lui, C. Hooper, P. Janke
{"title":"A high gain, low power MMIC LNA for Ka-band using InP HEMTs","authors":"C. Pobanz, M. Matloubian, L. Nguyen, M. Case, Ming Hu, M. Lui, C. Hooper, P. Janke","doi":"10.1109/RFIC.1999.805258","DOIUrl":"https://doi.org/10.1109/RFIC.1999.805258","url":null,"abstract":"Compact Ka-Band MMIC low noise amplifiers have been developed with high gain, low VSWR and low power dissipation using 0.12 /spl mu/m InP HEMT technology. A five stage single-ended LNA achieved 40 dB of gain and a 1.4 dB average noise figure over the 27-30 GHz band with an input return loss in excess of 15 dB. The 3/spl times/1 mm/sup 2/ MMIC consumes less than 40 milliwatts of dc power.","PeriodicalId":447109,"journal":{"name":"1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115602038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
A CDMA/FM upconvertor and variable-gain driver amplifier integrated circuit 一种CDMA/FM上变换器和变增益驱动放大集成电路
1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1999-06-13 DOI: 10.1109/RFIC.1999.805244
K. Carter, M. Vice, E. Carriere, J. Wholey, W. Fang, I. Kipnis
{"title":"A CDMA/FM upconvertor and variable-gain driver amplifier integrated circuit","authors":"K. Carter, M. Vice, E. Carriere, J. Wholey, W. Fang, I. Kipnis","doi":"10.1109/RFIC.1999.805244","DOIUrl":"https://doi.org/10.1109/RFIC.1999.805244","url":null,"abstract":"A highly integrated transmit RF IC for CDMA/FM handsets is presented. The CDMA transmit chain contains an upconvertor, a RF variable-gain driver amplifier, and a band select switch whereas the FM transmit chain consists of a single-side band upconvertor and a driver amplifier. The RF IC is fabricated using a 25 GHz F/sub t/ silicon bipolar process.","PeriodicalId":447109,"journal":{"name":"1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114659537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
76-GHz MMIC chip set for compact, low cost and highly reliable automotive radar system 76 ghz MMIC芯片组用于紧凑、低成本和高可靠的汽车雷达系统
1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1999-06-13 DOI: 10.1109/RFIC.1999.805246
H. Mizutani, N. Shida, T. Saryo, T. Kuwabara, T. Eda, T. Matsumura, M. Funabashi
{"title":"76-GHz MMIC chip set for compact, low cost and highly reliable automotive radar system","authors":"H. Mizutani, N. Shida, T. Saryo, T. Kuwabara, T. Eda, T. Matsumura, M. Funabashi","doi":"10.1109/RFIC.1999.805246","DOIUrl":"https://doi.org/10.1109/RFIC.1999.805246","url":null,"abstract":"This paper presents a compact and highly reliable 76-GHz MMIC chip set for a low cost automotive radar. The chip set consisting of a 38-GHz amplifier with 15.2-dBm output power, a transmitter MMIC with 11.0-dBm output power and a receiver MMIC with -4.6-dB conversion gain were successfully demonstrated.","PeriodicalId":447109,"journal":{"name":"1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124111159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
UTSi(R) phase locked loops: production 2 GHz RF CMOS UTSi(R)锁相环:生产2 GHz射频CMOS
1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1999-06-13 DOI: 10.1109/RFIC.1999.805261
R. Reedy
{"title":"UTSi(R) phase locked loops: production 2 GHz RF CMOS","authors":"R. Reedy","doi":"10.1109/RFIC.1999.805261","DOIUrl":"https://doi.org/10.1109/RFIC.1999.805261","url":null,"abstract":"A CMOS technology which is in production of 1 and 2 GHz RF PLLs is presented. Device performance is discussed, along with measured product performance. Advantages of the technology are discussed for application to integration of full RF systems on a single chip.","PeriodicalId":447109,"journal":{"name":"1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115974209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A single-chip Si-bipolar 1.6 GHz VCO with integrated bias network 单片si双极1.6 GHz压控振荡器集成偏置网络
1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1999-06-13 DOI: 10.1109/RFIC.1999.805252
M. Zannoth, J. Fenk, A. Springer, R. Weigel
{"title":"A single-chip Si-bipolar 1.6 GHz VCO with integrated bias network","authors":"M. Zannoth, J. Fenk, A. Springer, R. Weigel","doi":"10.1109/RFIC.1999.805252","DOIUrl":"https://doi.org/10.1109/RFIC.1999.805252","url":null,"abstract":"A single-chip 2.7 V voltage-controlled oscillator (VCO) with integrated bias network has been implemented in a Si-bipolar process with a f/sub T/ of 25 GHz. With an on-chip resonator consisting of vertically coupled inductors and varactor diodes an oscillation frequency of 1.56 GHz was measured. A careful design of the oscillator and the bias network was necessary to achieve a phase noise performance of -139 dBc/Hz at 4.7 MHz off carrier. The tuning sensitivity was 100 MHz/V, which is sufficient to compensate for production tolerances. The VCO can be used as a building block for single-chip transceivers in DECT- or GSM-systems.","PeriodicalId":447109,"journal":{"name":"1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)","volume":"101 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120942577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
A balanced monolithic oscillator at K-band k波段平衡单片振荡器
1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1999-06-13 DOI: 10.1109/RFIC.1999.805262
K. Ang, S. Nam, I. Robertson
{"title":"A balanced monolithic oscillator at K-band","authors":"K. Ang, S. Nam, I. Robertson","doi":"10.1109/RFIC.1999.805262","DOIUrl":"https://doi.org/10.1109/RFIC.1999.805262","url":null,"abstract":"A technique for generating accurate anti-phase signals is presented. A monolithic oscillator with dual outputs that are mutually locked in anti-phase has been realised. This new oscillator demonstrates significant potential in balanced circuits like mixers, multipliers and modulators where circuit performance relies on the precise generation of balanced signals.","PeriodicalId":447109,"journal":{"name":"1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124645760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A 3 V GaAs MESFET monolithic transmitter with cross-coupled common-source, common-gate pair linear mixer for cellular hand-held phones 一个3v GaAs MESFET单片发射机，具有交叉耦合共源，共门对线性混频器，用于蜂窝手持电话
1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1999-06-13 DOI: 10.1109/RFIC.1999.805272
Min-Gun Kim, J. Mun, Jong-Won Lim, Chung-Hwan Kim, Chang-Seok Lee, Jaejin Lee
{"title":"A 3 V GaAs MESFET monolithic transmitter with cross-coupled common-source, common-gate pair linear mixer for cellular hand-held phones","authors":"Min-Gun Kim, J. Mun, Jong-Won Lim, Chung-Hwan Kim, Chang-Seok Lee, Jaejin Lee","doi":"10.1109/RFIC.1999.805272","DOIUrl":"https://doi.org/10.1109/RFIC.1999.805272","url":null,"abstract":"A linear mixer with cross-coupled common-source, common-gate pair FET's was proposed and its performances were verified in the GaAs MESFET monolithic transmitter for cellular hand-held phones. The transmitter showed measured conversion gain of 31.2/spl sim/31.6 dB at LO input power of -5/spl sim/0 dBm, 1 dB compression point of power gain was 9.5 dBm at output power, and two-tone (with offset frequency /spl Delta/f=442.5 kHz) third-order intermodulation distortion (IMD3) at a total output power of 0 dBm was to be -47 dBc with a 3 V of supply voltage and 43 mA of current consumption.","PeriodicalId":447109,"journal":{"name":"1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121708334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An S-band low-noise amplifier with self-adjusting bias for improved power consumption and dynamic range in a mobile environment 具有自调节偏置的s波段低噪声放大器，可改善移动环境下的功耗和动态范围
1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1900-01-01 DOI: 10.1109/RFIC.1999.805269
Wei Xiong, L. Larson
{"title":"An S-band low-noise amplifier with self-adjusting bias for improved power consumption and dynamic range in a mobile environment","authors":"Wei Xiong, L. Larson","doi":"10.1109/RFIC.1999.805269","DOIUrl":"https://doi.org/10.1109/RFIC.1999.805269","url":null,"abstract":"A discrete low-noise amplifier designed to operate in a mobile wireless environment is presented. The amplifier utilizes two cascaded GaAs FETs to achieve 25 dB gain and 0.9 dB noise figure at 2.5 GHz. An active bias control circuit automatically and continuously adjusts the drain-source currents of the FETs to maintain power consumption at 33 mW in nominal small-signal conditions, and to provide elevated input IP3 and reduced noise figure during jamming. A 15 dB improvement in input IP3 is achieved in large-signal operation.","PeriodicalId":447109,"journal":{"name":"1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123048146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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