UTSi(R)锁相环:生产2 GHz射频CMOS

1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1999-06-13 DOI:10.1109/RFIC.1999.805261

R. Reedy

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引用次数: 2

摘要

介绍了一种用于生产1 GHz和2 GHz射频锁相环的CMOS技术。讨论了器件性能，以及测量的产品性能。讨论了该技术在单片集成全射频系统中的应用优势。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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UTSi(R) phase locked loops: production 2 GHz RF CMOS

A CMOS technology which is in production of 1 and 2 GHz RF PLLs is presented. Device performance is discussed, along with measured product performance. Advantages of the technology are discussed for application to integration of full RF systems on a single chip.

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来源期刊

1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)

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