1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)最新文献

A miniature PHEMT switched-LNA for 800 MHz to 8.0 GHz handset applications 用于800 MHz至8.0 GHz手机应用的微型PHEMT开关lna

1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1999-06-14 DOI: 10.1109/RFIC.1999.805250

H. Morkner, M. Frank, S. Yajima

引用次数: 15

Sigma-delta ADC and DAC for digital wireless communication 用于数字无线通信的Sigma-delta ADC和DAC

1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1999-06-14 DOI: 10.1109/RFIC.1999.805239

Zhongming Shi

引用次数: 11

High reliability non-hermetic 0.15 /spl mu/m GaAs pseudomorphic HEMT MMIC amplifiers 高可靠性非密封式0.15 /spl μ m GaAs伪晶HEMT MMIC放大器

1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1999-06-13 DOI: 10.1109/RFIC.1999.805259

D. Leung, Y. Chou, C. Wu, R. Kono, J. Scarpulla, R. Lai, M. Hoppe, D. Streit

{"title":"High reliability non-hermetic 0.15 /spl mu/m GaAs pseudomorphic HEMT MMIC amplifiers","authors":"D. Leung, Y. Chou, C. Wu, R. Kono, J. Scarpulla, R. Lai, M. Hoppe, D. Streit","doi":"10.1109/RFIC.1999.805259","DOIUrl":"https://doi.org/10.1109/RFIC.1999.805259","url":null,"abstract":"High reliability performance of a Ka-band low-noise MMIC amplifier fabricated using a 0.15 /spl mu/m production AlGaAs-InGaAs-GaAs HEMT process technology is reported. Operating at an accelerated DC bias condition of Vds=5.2 V and Ids=250 mA/mm, two-stage balanced amplifiers were lifetested at three-temperatures (T/sub ambient/=235/spl deg/C, T/sub ambient/=250/spl deg/C, and T/sub ambient/=265/spl deg/C) in air ambient. Failure time for each temperature was determined using /spl Delta/S21=-1.0 dB measured at room temperature as the failure criteria. The activation energy (Ea) is 1.6 eV, achieving a projected median-time-to-failure (MTF) of 7/spl times/10/sup 9/ hours at a 125/spl deg/C junction temperature. This is the first report of 0.15 /spl mu/m HEMT reliability based on S21 failure criteria of MMIC amplifiers under DC stress at high junction temperature in air ambient. This result demonstrates a robust HEMT technology immune to the stress effects of high electric field under high temperature operation suitable for non-hermetic commercial Ka-band applications.","PeriodicalId":447109,"journal":{"name":"1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115302600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 24

C-band Si 3DMMIC transceiver for wireless applications 用于无线应用的c波段Si 3DMMIC收发器

1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1999-06-13 DOI: 10.1109/RFIC.1999.805234

K. Nishikawa, K. Kamogawa, I. Toyoda, T. Tokumitsu, M. Tanaka

引用次数: 1

A 427 mW, 20% compact W-band InP HEMT MMIC power amplifier 427mw, 20%紧凑w波段InP HEMT MMIC功率放大器

1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1999-06-13 DOI: 10.1109/RFIC.1999.805247

D. Ingram, Y.C. Chen, J. Kraus, B. Brunner, B. Allen, H. Yen, K. Lau

引用次数: 60

Development of three dimensional ceramic-based MCM inductors for hybrid RF/microwave applications 用于射频/微波混合应用的三维陶瓷MCM电感器的研制

1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1999-06-13 DOI: 10.1109/RFIC.1999.805265

A. Sutono, A. Pham, J. Laskar, W. R. Smith

引用次数: 57

CMOS RF: (still) no longer an oxymoron CMOS RF:(仍然)不再是一个矛盾修饰法

1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1999-06-13 DOI: 10.1109/RFIC.1999.805227

T. Lee

{"title":"CMOS RF: (still) no longer an oxymoron","authors":"T. Lee","doi":"10.1109/RFIC.1999.805227","DOIUrl":"https://doi.org/10.1109/RFIC.1999.805227","url":null,"abstract":"As CMOS continues to evolve along predicted trajectories, its suitability for RF applications only improves. Peak device f/sub T/ is /spl sim/40 GHz for 0.25 /spl mu/m technology and should double roughly every three years if established trends continue. The growing number of interconnect layers benefits passive components as well, such as lateral flux (e.g., fractal) capacitors, accumulation-mode varactors, and shielded inductors and transformers. Coplanar waveguides of reasonable quality are enabled also, and were recently used in a distributed amplifier with a 23 GHz unity-gain frequency, and in a 17 GHz distributed oscillator. Device F/sub min/ is well under 0.5 dB at 1-2 GHz, allowing practical LNA NFs in the /spl sim/1 dB range on <10 mW of power, while new insights into device noise scaling have eased concerns about hot carrier noise enhancement. Exploitation of a new phase noise theory has allowed a 1.8 GHz oscillator to exhibit under -121 dBc/Hz phase noise @600 kHz offset, with on-chip spiral inductors and 6 mW of power, by using symmetry to suppress the effect of 1/f device noise. The 17 GHz distributed oscillator also achieves a phase noise better than -110 dBc/Hz @ 1 MHz on 52 mW of power. These developments have most recently resulted in a 0.25 /spl mu/m 5 GHz LNA/mixer/synthesizer that exhibits 5 dB overall NF and -2 dBm IIP3 on 45 mW of power.","PeriodicalId":447109,"journal":{"name":"1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114361932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 27

The MSM3000/sup TM/ dual-mode CDMA+AMPS ASIC: for increased functionality and standby time of handsets MSM3000/sup TM/双模CDMA+AMPS ASIC:用于增加手机的功能和待机时间

1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1999-06-13 DOI: 10.1109/RFIC.1999.805241

B. Butler, N. Yu

引用次数: 2

2.7 volt performance of high dynamic range receiver ICs for dual-band CDMA handsets 用于双频CDMA手机的高动态范围接收器ic的2.7伏性能

1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1999-06-13 DOI: 10.1109/RFIC.1999.805242

K. Rovos, F. Ali, C. Wakeham, B. Khabbaz, M. Murphy, K. Harrington

引用次数: 3

CMOS RF ICs for 900 MHz-2.4 GHz band wireless communication networks 用于900 MHz-2.4 GHz频段无线通信网络的CMOS RF ic

1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1999-06-13 DOI: 10.1109/RFIC.1999.805229

M. Madihian, L. Desclos, T. Drenski, Y. Kinoshita, H. Fujii, T. Yamazaki

引用次数: 22